The present disclosure provides a method of creating a bond between a first object and a second object. For example, at least one insert may be provided at a location in a space formed between the first object and the second object. In additional, a filler material may be provided proximal to the location. An inter-diffusion layer may be formed, wherein a first portion of the inter-diffusion layer is formed by diffusion between the filler material and the at least one insert, wherein a second portion of the inter-diffusion layer is formed between the filler material and the first object, wherein a third portion of the inter-diffusion layer is formed between the filler material and the second object, wherein the first portion is coadunate with each of the second portion and third portion.

A semiconductor package includes: a first package substrate; a first semiconductor device mounted on the first package substrate; a second package substrate arranged on an upper part of the first semiconductor device; and a heat-dissipating material layer arranged between the first semiconductor device and the second package substrate and having a thermal conductivity of approximately 0.5 W/m.Math.K to approximately 20 W/m.Math.K, wherein the heat-dissipating material layer is in direct contact with an upper surface of the first semiconductor device and a conductor of the second package substrate.

A semiconductor package includes: a first package substrate; a first semiconductor device mounted on the first package substrate; a second package substrate arranged on an upper part of the first semiconductor device; and a heat-dissipating material layer arranged between the first semiconductor device and the second package substrate and having a thermal conductivity of approximately 0.5 W/m.Math.K to approximately 20 W/m.Math.K, wherein the heat-dissipating material layer is in direct contact with an upper surface of the first semiconductor device and a conductor of the second package substrate.

A semiconductor element bonding body including: a substrate, in which a concave portion is formed; and a semiconductor element placed in the concave portion to be mounted to the substrate. A portion of the substrate in which the concave portion is formed is made of Cu. The concave portion has a perimeter portion in which a level difference is formed, and the level difference has a height d of 20 μm or more and less than 50 μm. The concave portion has a bottom surface having a flatness degree of λ/8.7 μm or more and λ/1.2 μm or less when a wavelength λ of a laser is 632.8 nm. A metal film is formed on the semiconductor element, and the bottom surface of the concave portion and the metal film are bonded directly to each other.

A method of forming an interconnection includes: providing an electronic component having a first main face and a first metallic layer disposed on the first main face; providing an electric component having a second main face and a second metallic layer disposed on the second main face, at least one of the first or second metallic layers including an oxide layer provided on a main face thereof; disposing a reducing agent on one or both of the electronic component and the electric component such that the reducing agent is enabled to remove the oxide layer; and connecting the electronic component to the electric component by directly connecting the first metallic layer of the electronic component with the second metallic layer of the electric component by applying pressure and heat.

A method of forming an interconnection includes: providing an electronic component having a first main face and a first metallic layer disposed on the first main face; providing an electric component having a second main face and a second metallic layer disposed on the second main face, at least one of the first or second metallic layers including an oxide layer provided on a main face thereof; disposing a reducing agent on one or both of the electronic component and the electric component such that the reducing agent is enabled to remove the oxide layer; and connecting the electronic component to the electric component by directly connecting the first metallic layer of the electronic component with the second metallic layer of the electric component by applying pressure and heat.

A package structure includes a substrate, a first capacitor, a System on Chip unit and a wiring layer. The first capacitor is provided on the substrate. The System on Chip unit is bonded with the first capacitor in a first dielectric layer. The wiring layer is configured to electrically couple the first capacitor and the System on Chip unit. The wiring layer is provided on the first dielectric layer through a second dielectric layer.

A package structure includes a substrate, a first capacitor, a System on Chip unit and a wiring layer. The first capacitor is provided on the substrate. The System on Chip unit is bonded with the first capacitor in a first dielectric layer. The wiring layer is configured to electrically couple the first capacitor and the System on Chip unit. The wiring layer is provided on the first dielectric layer through a second dielectric layer.

The present disclosure provides a method of creating a bond between a first object and a second object. For example, creating a joint or die attach between a semiconductor chip and an electronic substrate, especially for harsh and high temperature environments. The method may include a step of filling a space between the first object and the second object with a filler material. Further, the method may include a step of heating the filler material to facilitate formation of a plurality of inter-diffusion layers. Accordingly, a first inter-diffusion layer may be formed between the filler material and the first object. Further, a second inter-diffusion layer may be formed between the filler material and the second object. Furthermore, in some embodiments, the first inter-diffusion layer may be contiguous with the second inter-diffusion layer. The contiguity may be facilitated by placement of at least one insert between the first object and the second object, in which the inter-diffusion of the filler material and the at least one insert may produce the third inter-diffusion layer, wherein the third inter-diffusion layer is contiguous with each of the first inter-diffusion layer and the second inter-diffusion layer.

The present disclosure provides a method of creating a bond between a first object and a second object. For example, creating a joint or die attach between a semiconductor chip and an electronic substrate, especially for harsh and high temperature environments. The method may include a step of filling a space between the first object and the second object with a filler material. Further, the method may include a step of heating the filler material to facilitate formation of a plurality of inter-diffusion layers. Accordingly, a first inter-diffusion layer may be formed between the filler material and the first object. Further, a second inter-diffusion layer may be formed between the filler material and the second object. Furthermore, in some embodiments, the first inter-diffusion layer may be contiguous with the second inter-diffusion layer. The contiguity may be facilitated by placement of at least one insert between the first object and the second object, in which the inter-diffusion of the filler material and the at least one insert may produce the third inter-diffusion layer, wherein the third inter-diffusion layer is contiguous with each of the first inter-diffusion layer and the second inter-diffusion layer.