A method for applying a bonding layer that is comprised of a basic layer and a protective layer on a substrate with the following method steps: application of an oxidizable basic material as a basic layer on a bonding side of the substrate, at least partial covering of the basic layer with a protective material that is at least partially dissolvable in the basic material as a protective layer. In addition, the invention relates to a corresponding substrate.

Method for producing a composite structure comprising the direct bonding of at least one first wafer with a second wafer, and comprising a step of initiating the propagation of a bonding wave, where the bonding interface between the first and second wafers after the propagation of the bonding wave has a bonding energy of less than or equal to 0.7 J/m.sup.2. The step of initiating the propagation of the bonding wave is performed under one or more of the following conditions: placement of the wafers in an environment at a pressure of less than 20 mbar and/or application to one of the two wafers of a mechanical pressure of between 0.1 MPa and 33.3 MPa. The method further comprises, after the step of initiating the propagation of a bonding wave, a step of determining the level of stress induced during bonding of the two wafers, the level of stress being determined on the basis of a stress parameter Ct calculated using the formula Ct=Rc/Ep, where: Rc corresponds to the radius of curvature (in km) of the two-wafer assembly and Ep corresponds to the thickness (in m) of the two-wafer assembly. The method further comprises a step of validating the bonding when the level of stress Ct determined is greater than or equal to 0.07.

Methods, systems, and apparatuses that assist with cooling semiconductor packages, such as multi-chip packages (MCPs) are described. A semiconductor package includes a component on a substrate. The component can include one or more semiconductor dies. The package can also include a multi-reference integrated heat spreader (IHS) solution (also referred to as a smart IHS solution), where the smart IHS solution includes a smart IHS lid. The smart IHS lid includes a cavity formed in a central region of the smart lid. The smart IHS lid can be on the component, such that the cavity corresponds to the component. A first thermal interface material layer (TIM-layer 1) can be on the component. An individual IHS lid (IHS slug) can be on the TIM-layer 1. The IHS slug can be inserted into the cavity. Furthermore, an intermediate thermal interface material layer (TIM-1A layer) can be between the IHS slug and the cavity.

Methods, systems, and apparatuses that assist with cooling semiconductor packages, such as multi-chip packages (MCPs) are described. A semiconductor package includes a component on a substrate. The component can include one or more semiconductor dies. The package can also include a multi-reference integrated heat spreader (IHS) solution (also referred to as a smart IHS solution), where the smart IHS solution includes a smart IHS lid. The smart IHS lid includes a cavity formed in a central region of the smart lid. The smart IHS lid can be on the component, such that the cavity corresponds to the component. A first thermal interface material layer (TIM-layer 1) can be on the component. An individual IHS lid (IHS slug) can be on the TIM-layer 1. The IHS slug can be inserted into the cavity. Furthermore, an intermediate thermal interface material layer (TIM-1A layer) can be between the IHS slug and the cavity.

A lead-free, antimony-free solder alloy_suitable for use in electronic soldering applications. The solder alloy comprises (a) from 1 to 4 wt. % silver; (b) from 0.5 to 6 wt. % bismuth; (c) from 3.55 to 15 wt. % indium, (d) 3 wt. % or less of copper; (e) one or more optional elements and the balance tin, together with any unavoidable impurities.

An electronic component includes a base, a laminate of a plurality of conductive metal material layers, and a solder layer made of AuSn alloy solder. The laminate is disposed on the base. The solder layer is disposed on the laminate. The laminate includes a surface layer made of Au as the conductive metal material layer constituting an outermost layer. The surface layer includes a solder layer-disposing region in which the solder layer is disposed and a solder layer-empty region in which the solder layer is not disposed. The solder layer-disposing region and the solder layer-empty region are spatially separated from each other.

Methods, systems, and apparatuses that assist with cooling semiconductor packages, such as multi-chip packages (MCPs) are described. A semiconductor package includes a component on a substrate. The component can include one or more semiconductor dies. The package can also include a multi-reference integrated heat spreader (IHS) solution (also referred to as a smart IHS solution), where the smart IHS solution includes a smart IHS lid. The smart IHS lid includes a cavity formed in a central region of the smart lid. The smart IHS lid can be on the component, such that the cavity corresponds to the component. A first thermal interface material layer (TIM-layer 1) can be on the component. An individual IHS lid (IHS slug) can be on the TIM-layer 1. The IHS slug can be inserted into the cavity. Furthermore, an intermediate thermal interface material layer (TIM-1A layer) can be between the IHS slug and the cavity.

Methods, systems, and apparatuses that assist with cooling semiconductor packages, such as multi-chip packages (MCPs) are described. A semiconductor package includes a component on a substrate. The component can include one or more semiconductor dies. The package can also include a multi-reference integrated heat spreader (IHS) solution (also referred to as a smart IHS solution), where the smart IHS solution includes a smart IHS lid. The smart IHS lid includes a cavity formed in a central region of the smart lid. The smart IHS lid can be on the component, such that the cavity corresponds to the component. A first thermal interface material layer (TIM-layer 1) can be on the component. An individual IHS lid (IHS slug) can be on the TIM-layer 1. The IHS slug can be inserted into the cavity. Furthermore, an intermediate thermal interface material layer (TIM-1A layer) can be between the IHS slug and the cavity.

A method of forming a metal bonding layer includes forming first and second bonding metal layers on one surfaces of first and second bonding objects, respectively. The second bonding object is disposed on the first bonding object such that the first bonding metal layer and the second bonding metal layer face each other. A eutectic metal bonding layer is formed through a reaction between the first and second bonding metal layers. At least one of the first bonding metal layer and the second bonding metal layer includes an oxidation prevention layer formed on an upper surface thereof. The oxidation prevention layer is formed of a metal having an oxidation reactivity lower than an oxidation reactivity of the bonding metal layer on the upper surface which the oxidation prevention layer is disposed.

A method of forming a metal bonding layer includes forming first and second bonding metal layers on one surfaces of first and second bonding objects, respectively. The second bonding object is disposed on the first bonding object such that the first bonding metal layer and the second bonding metal layer face each other. A eutectic metal bonding layer is formed through a reaction between the first and second bonding metal layers. At least one of the first bonding metal layer and the second bonding metal layer includes an oxidation prevention layer formed on an upper surface thereof. The oxidation prevention layer is formed of a metal having an oxidation reactivity lower than an oxidation reactivity of the bonding metal layer on the upper surface which the oxidation prevention layer is disposed.