Methods, systems, and apparatuses that assist with cooling semiconductor packages, such as multi-chip packages (MCPs) are described. A semiconductor package includes a component on a substrate. The component can include one or more semiconductor dies. The package can also include a multi-reference integrated heat spreader (IHS) solution (also referred to as a smart IHS solution), where the smart IHS solution includes a smart IHS lid. The smart IHS lid includes a cavity formed in a central region of the smart lid. The smart IHS lid can be on the component, such that the cavity corresponds to the component. A first thermal interface material layer (TIM-layer 1) can be on the component. An individual IHS lid (IHS slug) can be on the TIM-layer 1. The IHS slug can be inserted into the cavity. Furthermore, an intermediate thermal interface material layer (TIM-1A layer) can be between the IHS slug and the cavity.

Methods, systems, and apparatuses that assist with cooling semiconductor packages, such as multi-chip packages (MCPs) are described. A semiconductor package includes a component on a substrate. The component can include one or more semiconductor dies. The package can also include a multi-reference integrated heat spreader (IHS) solution (also referred to as a smart IHS solution), where the smart IHS solution includes a smart IHS lid. The smart IHS lid includes a cavity formed in a central region of the smart lid. The smart IHS lid can be on the component, such that the cavity corresponds to the component. A first thermal interface material layer (TIM-layer 1) can be on the component. An individual IHS lid (IHS slug) can be on the TIM-layer 1. The IHS slug can be inserted into the cavity. Furthermore, an intermediate thermal interface material layer (TIM-1A layer) can be between the IHS slug and the cavity.

Methods, systems, and apparatuses that assist with cooling semiconductor packages, such as multi-chip packages (MCPs) are described. A semiconductor package includes a component on a substrate. The component can include one or more semiconductor dies. The package can also include a multi-reference integrated heat spreader (IHS) solution (also referred to as a smart IHS solution), where the smart IHS solution includes a smart IHS lid. The smart IHS lid includes a cavity formed in a central region of the smart lid. The smart IHS lid can be on the component, such that the cavity corresponds to the component. A first thermal interface material layer (TIM-layer 1) can be on the component. An individual IHS lid (IHS slug) can be on the TIM-layer 1. The IHS slug can be inserted into the cavity. Furthermore, an intermediate thermal interface material layer (TIM-1A layer) can be between the IHS slug and the cavity.

Methods, systems, and apparatuses that assist with cooling semiconductor packages, such as multi-chip packages (MCPs) are described. A semiconductor package includes a component on a substrate. The component can include one or more semiconductor dies. The package can also include a multi-reference integrated heat spreader (IHS) solution (also referred to as a smart IHS solution), where the smart IHS solution includes a smart IHS lid. The smart IHS lid includes a cavity formed in a central region of the smart lid. The smart IHS lid can be on the component, such that the cavity corresponds to the component. A first thermal interface material layer (TIM-layer 1) can be on the component. An individual IHS lid (IHS slug) can be on the TIM-layer 1. The IHS slug can be inserted into the cavity. Furthermore, an intermediate thermal interface material layer (TIM-1A layer) can be between the IHS slug and the cavity.

A semiconductor chip includes a semiconductor body having a lower side with a lower chip metallization applied thereto. A first contact metallization layer is produced on the lower chip metallization. A second contact metallization layer is produced on a metal surface of a substrate. The semiconductor chip and the substrate are pressed onto one another for a pressing time so that the first and second contact metallization layers bear directly and extensively on one another. During the pressing time, the first contact metallization layer is kept continuously at temperatures which are lower than the melting temperature of the first contact metallization layer. The second contact metallization layer is kept continuously at temperatures which are lower than the melting temperature of the second contact metallization layer during the pressing time. After the pressing together, the first and second contact metallization layers have a total thickness less than 1000 nm.

A semiconductor chip includes a semiconductor body having a lower side with a lower chip metallization applied thereto. A first contact metallization layer is produced on the lower chip metallization. A second contact metallization layer is produced on a metal surface of a substrate. The semiconductor chip and the substrate are pressed onto one another for a pressing time so that the first and second contact metallization layers bear directly and extensively on one another. During the pressing time, the first contact metallization layer is kept continuously at temperatures which are lower than the melting temperature of the first contact metallization layer. The second contact metallization layer is kept continuously at temperatures which are lower than the melting temperature of the second contact metallization layer during the pressing time. After the pressing together, the first and second contact metallization layers have a total thickness less than 1000 nm.

A method of forming a metal bonding layer includes forming first and second bonding metal layers on one surfaces of first and second bonding objects, respectively. The second bonding object is disposed on the first bonding object such that the first bonding metal layer and the second bonding metal layer face each other. A eutectic metal bonding layer is formed through a reaction between the first and second bonding metal layers. At least one of the first bonding metal layer and the second bonding metal layer includes an oxidation prevention layer formed on an upper surface thereof. The oxidation prevention layer is formed of a metal having an oxidation reactivity lower than an oxidation reactivity of the bonding metal layer on the upper surface which the oxidation prevention layer is disposed.

A method of forming a metal bonding layer includes forming first and second bonding metal layers on one surfaces of first and second bonding objects, respectively. The second bonding object is disposed on the first bonding object such that the first bonding metal layer and the second bonding metal layer face each other. A eutectic metal bonding layer is formed through a reaction between the first and second bonding metal layers. At least one of the first bonding metal layer and the second bonding metal layer includes an oxidation prevention layer formed on an upper surface thereof. The oxidation prevention layer is formed of a metal having an oxidation reactivity lower than an oxidation reactivity of the bonding metal layer on the upper surface which the oxidation prevention layer is disposed.

A method for manufacturing a semiconductor structure includes: forming a first bonding layer on a device substrate, the first bonding layer including a first bonding sub-layer and a second bonding sub-layer, the first bonding sub-layer including a first metal oxide material in an amorphous state and a plurality of metal nanoparticles, the second bonding sub-layer including a second metal oxide material in an amorphous state; forming a second bonding layer on a carrier substrate, the second bonding layer including a third metal oxide material in an amorphous state; conducting a surface modification process on the first and second bonding layers; bonding the device and carrier substrates to each other through the first and second bonding layers; and annealing the first and second bonding layers to convert the first, second, and third metal oxide materials from the amorphous state to a crystalline state.

A method for manufacturing a semiconductor structure includes: forming a first bonding layer on a device substrate, the first bonding layer including a first bonding sub-layer and a second bonding sub-layer, the first bonding sub-layer including a first metal oxide material in an amorphous state and a plurality of metal nanoparticles, the second bonding sub-layer including a second metal oxide material in an amorphous state; forming a second bonding layer on a carrier substrate, the second bonding layer including a third metal oxide material in an amorphous state; conducting a surface modification process on the first and second bonding layers; bonding the device and carrier substrates to each other through the first and second bonding layers; and annealing the first and second bonding layers to convert the first, second, and third metal oxide materials from the amorphous state to a crystalline state.