Patent classifications
H
ELECTRICITY
Load children
H01
ELECTRIC ELEMENTS
Load children
H01L
SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
Load children
2224/00
Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
Load children Filter patents View analytics View as hierarchy Open in page
H01L2224/01
Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
Load children Filter patents View analytics View as hierarchy Open in page
H01L2224/26
Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
Load children Filter patents View analytics View as hierarchy Open in page
H01L2224/28
Structure, shape, material or disposition of the layer connectors prior to the connecting process
Load children Filter patents View analytics View as hierarchy Open in page
H01L2224/29
of an individual layer connector
Load children Filter patents View analytics View as hierarchy Open in page
H01L2224/29001
Core members of the layer connector
Load children Filter patents View analytics View as hierarchy Open in page
H01L2224/291
with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
Load children Filter patents View analytics View as hierarchy Open in page
H01L2224/29163
the principal constituent melting at a temperature of greater than 1550°C
Load children Filter patents View analytics View as hierarchy Open in page
H01L2224/2918
Molybdenum [Mo] as principal constituent
Filter patents View analytics View as hierarchy Open in page

H01L2224/2918

LAYERED BONDING MATERIAL, SEMICONDUCTOR PACKAGE, AND POWER MODULE
20250379173 · 2025-12-11 · ·

A layered bonding material 10 includes a base material 11, a first solder section 12a stacked on a first surface of the base material 11, and a second solder section 12b stacked on a second surface of the base material 11. A coefficient of linear expansion of the base material 11 is 7.0 to 9.9 ppm/K, the first solder section 12a and the second solder section 12b are made of lead-free solder, the lead-free solder has a Young's modulus of 45 GPa or higher and tensile strength of 100 MPa or lower, and the thickness of the first solder section 12a is different from the thickness of the second solder section 12b.