A method of soldering elements together includes providing a substrate having a metal die attach surface, providing a semiconductor die that is configured as a power semiconductor device and having a semiconductor body, a rear side metallization, and a front side layer stack, the front side layer stack having a front side metallization and a contaminant protection layer, arranging the semiconductor die on the substrate with a region of solder material between the die attach surface and the rear side metallization, and performing a soldering process that reflows the region of solder material to form a soldered joint between the metal die attach surface and the rear side metallization, wherein the soldering process comprises applying mechanical pressure to the front side metallization, and wherein the contaminant protection layer is configured to prevent transmission of contaminants into the semiconductor body after the soldering process is completed.

In some examples, a system comprises a first component having a first surface, a first set of nanoparticles coupled to the first surface, and a first set of nanowires extending from the first set of nanoparticles. The system also comprises a second component having a second surface, a second set of nanoparticles coupled to the second surface, and a second set of nanowires extending from the second set of nanoparticles. The system further includes an adhesive positioned between the first and second surfaces. The first and second sets of nanowires are positioned within the adhesive.

In some examples, a system comprises a first component having a first surface, a first set of nanoparticles coupled to the first surface, and a first set of nanowires extending from the first set of nanoparticles. The system also comprises a second component having a second surface, a second set of nanoparticles coupled to the second surface, and a second set of nanowires extending from the second set of nanoparticles. The system further includes an adhesive positioned between the first and second surfaces. The first and second sets of nanowires are positioned within the adhesive.

A semiconductor device package includes a package substrate having a die attach region, a silicon carbide (SiC) substrate having a first surface including a semiconductor device layer thereon and a second surface that is opposite the first surface, and a die attach metal stack. The die attach metal stack includes a sputtered die attach material layer that attaches the second surface of the SiC substrate to the die attach region of the package substrate, where the sputtered die attach material layer comprises a void percent of about 15% or less. The sputtered die attach material layer may be formed using a sputter gas including at least one of krypton (Kr), xenon (Xe), or radon (Rn). The die attach metal stack may further include a metal interlayer that prevent contacts with a first barrier metal layer during a phase transition of the die attach material layer.

A device includes a redistribution structure, a first semiconductor device, a first antenna, and a first conductive pillar on the redistribution structure that are electrically connected to the redistribution structure, an antenna structure over the first semiconductor device, wherein the antenna structure includes a second antenna that is different from the first antenna, wherein the antenna structure includes an external connection bonded to the first conductive pillar, and a molding material extending between the antenna structure and the redistribution structure, the molding material surrounding the first semiconductor device, the first antenna, the external connection, and the first conductive pillar.

A device includes a redistribution structure, a first semiconductor device, a first antenna, and a first conductive pillar on the redistribution structure that are electrically connected to the redistribution structure, an antenna structure over the first semiconductor device, wherein the antenna structure includes a second antenna that is different from the first antenna, wherein the antenna structure includes an external connection bonded to the first conductive pillar, and a molding material extending between the antenna structure and the redistribution structure, the molding material surrounding the first semiconductor device, the first antenna, the external connection, and the first conductive pillar.

An electronic device with a multi-layer contact and a system is disclosed. In an embodiment, a semiconductor device includes a semiconductor substrate having a first electrode terminal located on a first surface and a second surface electrode terminal located on a second surface, the first surface being opposite to the second surface, an electrical contact layer disposed directly on the first electrode terminal, a functional layer directly disposed on the electrical contact layer, an adhesion layer directly disposed on the functional layer, a solder layer directly disposed on the adhesion layer; and a protection layer directly disposed on the solder layer, wherein the semiconductor device is a power semiconductor device configured to provide a vertical current flow.

A highly reliable bonded structure having excellent thermal fatigue resistance characteristics and thermal stress relaxation characteristics is provided. The bonded structure of the present invention comprises a first member, a second member capable of being bonded to the first member, and a bonding part interposed between a first bond surface at the first member side and a second bond surface at the second member side to bond the first member and the second member. The bonding part has at least a bonding layer, a reinforcing layer, and an intermediate layer. The bonding layer is composed of an intermetallic compound and bonded to the first bond surface.

A highly reliable bonded structure having excellent thermal fatigue resistance characteristics and thermal stress relaxation characteristics is provided. The bonded structure of the present invention comprises a first member, a second member capable of being bonded to the first member, and a bonding part interposed between a first bond surface at the first member side and a second bond surface at the second member side to bond the first member and the second member. The bonding part has at least a bonding layer, a reinforcing layer, and an intermediate layer. The bonding layer is composed of an intermetallic compound and bonded to the first bond surface.

A chip package structure is provided. The chip package structure includes a substrate having a first surface and a second surface opposite to the first surface. The chip package structure includes a first chip structure and a second chip structure over the first surface. The chip package structure includes a protective layer over the first surface and surrounding the first chip structure and the second chip structure. A portion of the protective layer is between the first chip structure and the second chip structure. The chip package structure includes a first anti-warpage bump over the second surface and extending across the portion of the protective layer. The chip package structure includes a conductive bump over the second surface and electrically connected to the first chip structure or the second chip structure. The first anti-warpage bump is wider than the conductive bump.