A semiconductor device according to an embodiment includes a substrate, an -ray shielding layer, a first semiconductor chip, and a second semiconductor chip. The -ray shielding layer is provided on the substrate. The first semiconductor chip is provided on the -ray shielding layer. The second semiconductor chip is provided on the first semiconductor chip, whose operation is controlled by the first semiconductor chip.

A device includes a redistribution structure, a first semiconductor device, a first antenna, and a first conductive pillar on the redistribution structure that are electrically connected to the redistribution structure, an antenna structure over the first semiconductor device, wherein the antenna structure includes a second antenna that is different from the first antenna, wherein the antenna structure includes an external connection bonded to the first conductive pillar, and a molding material extending between the antenna structure and the redistribution structure, the molding material surrounding the first semiconductor device, the first antenna, the external connection, and the first conductive pillar.

A device includes a redistribution structure, a first semiconductor device, a first antenna, and a first conductive pillar on the redistribution structure that are electrically connected to the redistribution structure, an antenna structure over the first semiconductor device, wherein the antenna structure includes a second antenna that is different from the first antenna, wherein the antenna structure includes an external connection bonded to the first conductive pillar, and a molding material extending between the antenna structure and the redistribution structure, the molding material surrounding the first semiconductor device, the first antenna, the external connection, and the first conductive pillar.

A method of determining a sintering thermal impedance of a sintering layer (25) comprising: providing a substrate (20) having a predetermined substrate thermal impedance, disposing the sintering layer (25) on the substrate (20) forming with the sintering layer (25) a stack, placing at least one semiconductor die (30) comprising a semiconductor element (40) with at least two element electrodes (45; 47) on the sintering layer (25), injecting an electrical current through the at least two element electrodes (45; 47) for measuring a temperature sensitive parameter of the semiconductor element (40), heating the stack with a predetermined heat power, determining, while sintering, a semiconductor element temperature from the measured temperature sensitive parameter, measuring a stack temperature, determining a stack thermal impedance by subtracting the semiconductor element temperature from the stack temperature and dividing by the predetermined heat power, and subtracting the predetermined substrate thermal impedance from the stack thermal impedance.

A method of determining a sintering thermal impedance of a sintering layer (25) comprising: providing a substrate (20) having a predetermined substrate thermal impedance, disposing the sintering layer (25) on the substrate (20) forming with the sintering layer (25) a stack, placing at least one semiconductor die (30) comprising a semiconductor element (40) with at least two element electrodes (45; 47) on the sintering layer (25), injecting an electrical current through the at least two element electrodes (45; 47) for measuring a temperature sensitive parameter of the semiconductor element (40), heating the stack with a predetermined heat power, determining, while sintering, a semiconductor element temperature from the measured temperature sensitive parameter, measuring a stack temperature, determining a stack thermal impedance by subtracting the semiconductor element temperature from the stack temperature and dividing by the predetermined heat power, and subtracting the predetermined substrate thermal impedance from the stack thermal impedance.

Embodiments include semiconductor packages and methods of forming such packages. A semiconductor package includes a die on a package substrate, an integrated heat spreader (IHS) on the package substrate and above the die, and a solder thermal interface material (STIM) coupling the die to the IHS. The semiconductor package includes a low-temperature solder (LTS) paste comprising an alloy of tin and bismuth (Bi), and the LTS paste on a bottom surface of the package substrate having a ball grid array. The LTS paste may have a weight percentage of Bi greater than 35% and a melting point less than or equal to a melting point of the STIM, where the STIM includes indium. The weight percentage of Bi may be between approximately 35% to 58%. The semiconductor package may include a solder ball coupling the LTS paste on the package substrate to the LTS paste on a second package substrate.

Embodiments include semiconductor packages and methods of forming such packages. A semiconductor package includes a die on a package substrate, an integrated heat spreader (IHS) on the package substrate and above the die, and a solder thermal interface material (STIM) coupling the die to the IHS. The semiconductor package includes a low-temperature solder (LTS) paste comprising an alloy of tin and bismuth (Bi), and the LTS paste on a bottom surface of the package substrate having a ball grid array. The LTS paste may have a weight percentage of Bi greater than 35% and a melting point less than or equal to a melting point of the STIM, where the STIM includes indium. The weight percentage of Bi may be between approximately 35% to 58%. The semiconductor package may include a solder ball coupling the LTS paste on the package substrate to the LTS paste on a second package substrate.

An electronic device with a multi-layer contact and a system is disclosed. In an embodiment, a semiconductor device includes a semiconductor substrate having a first electrode terminal located on a first surface and a second surface electrode terminal located on a second surface, the first surface being opposite to the second surface, an electrical contact layer disposed directly on the first electrode terminal, a functional layer directly disposed on the electrical contact layer, an adhesion layer directly disposed on the functional layer, a solder layer directly disposed on the adhesion layer; and a protection layer directly disposed on the solder layer, wherein the semiconductor device is a power semiconductor device configured to provide a vertical current flow.

In some implementations, one or more semiconductor processing tools may form a metal cap on a metal gate. The one or more semiconductor processing tools may form one or more dielectric layers on the metal cap. The one or more semiconductor processing tools may form a recess to the metal cap within the one or more dielectric layers. The one or more semiconductor processing tools may perform a bottom-up deposition of metal material on the metal cap to form a metal plug within the recess and directly on the metal cap.

A semiconductor package is disclosed. The semiconductor package includes a package substrate. The semiconductor package includes a semiconductor die having a first surface attached to the package substrate and a second surface. The semiconductor package includes a heat sink attached to the second surface of the semiconductor die. The semiconductor package includes a heat dissipation layer interposed between the heat sink and the semiconductor die. The heat dissipation layer comprises one or more high-k dielectric materials.