A light-emitting device includes a light-emitting element, a supporting structure, a first wavelength conversion structure, and a light-absorbing layer. The light-emitting element includes a plurality of active stacks separated from each other, a first-type semiconductor layer continuously arranged on the plurality of active stacks, and a plurality of second-type semiconductor layers under the plurality of active stacks. The supporting structure is disposed on the light-emitting element and includes a first opening. The first wavelength conversion structure disposed in the first opening. The light-absorbing layer disposed on the top surface of the supporting structure.

A light-emitting device includes a light-emitting element, a supporting structure, a first wavelength conversion structure, and a light-absorbing layer. The light-emitting element includes a plurality of active stacks separated from each other, a first-type semiconductor layer continuously arranged on the plurality of active stacks, and a plurality of second-type semiconductor layers under the plurality of active stacks. The supporting structure is disposed on the light-emitting element and includes a first opening. The first wavelength conversion structure disposed in the first opening. The light-absorbing layer disposed on the top surface of the supporting structure.

A magnetic polymer for use in microelectronic fabrication includes a polymer matrix and a plurality of ferromagnetic particles disposed in the polymer matrix. The magnetic polymer can be part of an insulation layer in an inductor formed in one or more backend wiring layers of an integrated device. The magnetic polymer can also be in the form of a magnetic epoxy layer for mounting contacts of the integrated device to a package substrate.

A magnetic polymer for use in microelectronic fabrication includes a polymer matrix and a plurality of ferromagnetic particles disposed in the polymer matrix. The magnetic polymer can be part of an insulation layer in an inductor formed in one or more backend wiring layers of an integrated device. The magnetic polymer can also be in the form of a magnetic epoxy layer for mounting contacts of the integrated device to a package substrate.

A semiconductor package is disclosed. The semiconductor package includes a base structure, a first semiconductor chip over the base structure, a second semiconductor chip over the first semiconductor chip, an adhesive layer between the first semiconductor chip and the second semiconductor chip, and a molding layer covering the first semiconductor chip, the second semiconductor chip and the adhesive layer, and including an interposition portion interposed between the base structure and the first semiconductor chip.

The present invention relates to transient liquid phase sinter pastes for electronic interconnects, and sinter paste application and processing methods.

An assembly of a semiconductor chip having pads to a substrate having pads aligned to receive the semiconductor chip is provided, whereby at least one of the semiconductor chip pads and substrate pads include solder bumps. The solder bumps are deformed against the substrate pads and the semiconductor chip pads, whereby an underfill material is applied to fill the gap between the semiconductor chip and substrate. The underfill material does not penetrate between the deformed solder bumps, the semiconductor chip pads, and the substrate pads. At least one of the solder bumps have not been melted or reflowed to make a metallurgical bond between the semiconductor chip pads and the substrate pads, and at least another one of the solder bumps have been melted or reflowed to make a metallurgical bond between the semiconductor chip pads and the substrate pads.

A thermal bonding sheet includes a layer, in which an average area of a pore portion in a cross section of the layer after being heated at a heating rate of 1.5 C./sec from 80 C. to 300 C. under pressure of 10 MPa, and then held at 300 C. for 2.5 minutes is in a range of 0.005 m.sup.2 to 0.5 m.sup.2.

A problem is to provide a sheet having a pre-sintering layer, the thickness of which following sintering is such as to be capable of relieving stresses. Solution means relate to a sheet comprising a pre-sintering layer. Viscosity at 90 C. of the pre-sintering layer is not less than 0.27 MPa.Math.s. Thickness of the pre-sintering layer is 30 m to 200 m.

Provided is a thermal bonding sheet which suppresses a compositional material of the thermal bonding sheet from protruding during bonding and from creeping up onto the surface of an object to be bonded, and provides a strong sintered layer after sintering. A thermal bonding sheet includes a layer. When the layer is analyzed by a differential thermal balance from 23 C. to 500 C. in an air atmosphere at a heating rate of 10 C./min, a value obtained by subtracting a weight decrease amount (%) at 300 C. from a weight decrease amount (%) at 500 C. is in a range of 1% to 0%.