Embodiments of the present disclosure describe novel qubit device packages, as well as related computing devices and methods. In one embodiment, an exemplary qubit device package includes a qubit die and a package substrate, where the qubit die is coupled to the package substrate using one or more preforms. In particular, a single preform may advantageously be used to replace a plurality of individual contacts, e.g. a plurality of individual solder bumps, electrically coupling the qubit die to the package substrate. Such packages may reduce design complexity and undesired coupling, and enable inclusion of larger numbers of qubits in a single qubit die.

Embodiments of the present disclosure describe novel qubit device packages, as well as related computing devices and methods. In one embodiment, an exemplary qubit device package includes a qubit die and a package substrate, where the qubit die is coupled to the package substrate using one or more preforms. In particular, a single preform may advantageously be used to replace a plurality of individual contacts, e.g. a plurality of individual solder bumps, electrically coupling the qubit die to the package substrate. Such packages may reduce design complexity and undesired coupling, and enable inclusion of larger numbers of qubits in a single qubit die.

Embodiments of the present disclosure describe novel qubit device packages, as well as related computing devices and methods. In one embodiment, an exemplary qubit device package includes a qubit die and a package substrate, where the qubit die is coupled to the package substrate using one or more preforms. In particular, a single preform may advantageously be used to replace a plurality of individual contacts, e.g. a plurality of individual solder bumps, electrically coupling the qubit die to the package substrate. Such packages may reduce design complexity and undesired coupling, and enable inclusion of larger numbers of qubits in a single qubit die.

This disclosure is related to integrating optoelectronics microdevices into a system substrate for efficient and durable electrical bonding between two substrates at low temperature. 2D nanostructures and 3D scaffolds may create interlocking structures for improved bonding properties. Addition of nanoparticles into the structure creates high surface area for better conduction. Application of curing agents before or after alignment of micro devices and receiving substrates further assists with formation of strong bonds.

This disclosure is related to integrating optoelectronics microdevices into a system substrate for efficient and durable electrical bonding between two substrates at low temperature. 2D nanostructures and 3D scaffolds may create interlocking structures for improved bonding properties. Addition of nanoparticles into the structure creates high surface area for better conduction. Application of curing agents before or after alignment of micro devices and receiving substrates further assists with formation of strong bonds.

An LED subpixel can be provided with a reflector layer that controls viewing angles. After formation of an array of nanowires including first conductivity type cores and active layers, a second conductivity type semiconductor material layer, a transparent conductive oxide layer, and a dielectric material layer are sequentially formed. An opening is formed through the dielectric material layer over the array of nanowires. The reflector layer can be formed around the array of nanowires and through the opening in the dielectric material layer on the transparent conductive oxide layer. A conductive bonding structure is formed in electrical contact with the reflector layer.

The present invention can give a joining structure using metal nanoparticles to join the same types or different types of metal where when one surface metal is Al based, the parts are joined through a joining layer containing Ni nanoparticles, whereby a good joining strength is obtained. Further, by using two joining layers (6, 8) including metal nanoparticles to sandwich metal foil (7) so as to form a joining layer and joining the same type or different types of surface metals (3-4) through this joining layer, it is possible to ease the thermal stress due to the difference in amounts of thermal expansion of joined members which have two surface metals.

The present invention can give a joining structure using metal nanoparticles to join the same types or different types of metal where when one surface metal is Al based, the parts are joined through a joining layer containing Ni nanoparticles, whereby a good joining strength is obtained. Further, by using two joining layers (6, 8) including metal nanoparticles to sandwich metal foil (7) so as to form a joining layer and joining the same type or different types of surface metals (3-4) through this joining layer, it is possible to ease the thermal stress due to the difference in amounts of thermal expansion of joined members which have two surface metals.

According to the present invention, a semiconductor device includes a heat spreader, a semiconductor chip fixed to a mounting surface of the heat spreader via a bonding member and sealing resin that covers the heat spreader and the semiconductor chip, wherein a groove is formed on the mounting surface around the semiconductor chip, a length between the semiconductor chip and the groove is equal to or greater than a depth of the groove, and the bonding member is not provided on at least part of a region of the mounting surface between the semiconductor chip and the groove.

According to the present invention, a semiconductor device includes a heat spreader, a semiconductor chip fixed to a mounting surface of the heat spreader via a bonding member and sealing resin that covers the heat spreader and the semiconductor chip, wherein a groove is formed on the mounting surface around the semiconductor chip, a length between the semiconductor chip and the groove is equal to or greater than a depth of the groove, and the bonding member is not provided on at least part of a region of the mounting surface between the semiconductor chip and the groove.