A method for circuit die stacking can include providing a first circuit die having a first metal stack, wherein the first circuit die corresponds to a primary thermal source of an integrated circuit including the first circuit die. The method can additionally include providing a second circuit die of the integrated circuit, wherein the second circuit die has a second metal stack and is configured for connection to at least one of a package substrate or an additional die. The method can also include connecting the first metal stack to the second metal stack. Various other methods, systems, and computer-readable media are also disclosed.

A method for die pair partitioning can include providing a circuit die that has a metal stack and that includes a majority of logic transistors of an integrated circuit. The method can also include providing one or more additional circuit die that have one or more additional metal stacks of which at least one is connected to the metal stack of the circuit die and a majority of static random access memory and analog devices of the integrated circuit. The method can further include connecting at least one of the one or more additional metal stacks to the metal stack of the circuit die. Various other methods, systems, and computer-readable media are also disclosed.

A method for die pair partitioning can include providing a circuit die. The method can additionally include providing one or more additional circuit die having one or more fuses positioned therein, wherein the one or more fuses identify the circuit die. The method can also include connecting the one or more additional circuit die to the circuit die. Various other methods, systems, and computer-readable media are also disclosed.

A method of fabricating an electrical guard structure for providing signal isolation is provided. The method includes providing a substrate having a mounting surface comprising a first area for hosting at least one electronic component. The method further comprises synthesizing a plurality of thread-like structures over the substrate to collectively form one or more electrically conductive projections extending transverse to the mounting surface. The one or more electrically conductive projections include one or more wall-like structures which are elongate parallel to the mounting surface. The electrically conductive projections can be transferred to another surface such as a major surface of a second substrate. There are further provided a support structure and a guard structure having the wall-like electrically conductive projections which are electrically grounded when in use to provide signal isolation.

Systems, apparatus, articles of manufacture, and methods for stacks of glass layers including deep trench capacitors are disclosed. An example substrate for an integrated circuit package disclosed herein includes a first glass layer, a second glass layer coupled to the first glass layer, and a deep trench capacitor embedded in the first core.

Embodiments of the invention include a method for fabricating a semiconductor structure and the resulting structure. A plurality of semiconductor devices is formed, including a first semiconductor device and a second semiconductor device. A first contact is formed, where the first contact contacts: (i) the first semiconductor device and (ii) the second semiconductor device. A second contact and a third contact are formed, where the second contact contacts the first semiconductor device and the third contact contacts the second semiconductor device.