A semiconductor module includes: a board; a semiconductor device disposed on the board, a first surface of the semiconductor device closer to the board being connected to the board; an interconnection layer to which a second surface of the semiconductor device opposite to the first surface is connected, and which has a recess portion on an opposite surface to a surface closer to the semiconductor device; a first metal film disposed in the recess portion of the interconnection layer via a bonding film, and that is electrically connected to the interconnection layer; an insulating layer disposed on the first metal film; and a heat transfer plate disposed on the insulating layer.

A system configured to increase a reliability of electrical connections in a device. The system including a lead configured to electrically connect a pad of at least one support structure to a pad of at least one electrical component. The lead includes an upper portion that includes a lower surface arranged on a lower surface thereof. The lower surface of the upper portion is arranged vertically above a first upper surface of a first pad connection portion; and the lower surface of the upper portion is arranged vertically above a second upper surface of the second pad connection portion. A process configured to increase a reliability of electrical connections in a device is also disclosed.

A metal clip disposed on chips to connect the chips to each other, includes a plurality of bonding parts each having a lower surface configured to bond to an upper surface of each of the chips; and an outer side part formed at each of the bonding parts to extend upward from at least a portion of an outer side of respective ones of the bonding parts to form a step therefrom.

A method of batch soldering includes: forming a soldered joint between a metal region of a first semiconductor die and a metal region of a substrate using a solder preform via a soldering process which does not apply pressure directly to the first semiconductor die, the solder preform having a maximum thickness of 30 μm and a lower melting point than the metal regions; setting a soldering temperature of the soldering process so that the solder preform melts and fully reacts with the metal region of the first semiconductor die and the metal region of the substrate to form one or more intermetallic phases throughout the entire soldered joint, each intermetallic phase having a melting point above the preform melting point and the soldering temperature; and soldering a second semiconductor die to the same or different metal region of the substrate, without applying pressure directly to the second semiconductor die.

Provided is an apparatus for attaching semiconductor parts. The apparatus includes a substrate loading unit, at least one semiconductor part loader, a first vision examination unit, at least one semiconductor part picker, at least one adhesive hardening unit, and a substrate unloading unit, wherein the substrate loading unit supplies a substrate on which semiconductor units are arranged, the at least one semiconductor part loader supplies semiconductor parts, the first vision examination unit examines arrangement states of the semiconductor units, the at least one semiconductor part picker mounts semiconductor parts in the semiconductor units, the at least one adhesive hardening unit hardens and attaches adhesives interposed between the semiconductor units and the semiconductor parts, and the substrate unloading unit releases the substrate on which semiconductor parts are mounted. The adhesive hardening units restrictively transmit a heat source only to at least one semiconductor unit, which is to be hardened.

In an integrated circuit (IC), a semiconductor substrate has a first side and an opposite second side. The second side has a trench. Circuitry is on the first side. An inductive structure is within the trench. The inductive structure is connected to the circuitry through vias in the semiconductor substrate. The semiconductor substrate is mounted on a package substrate. At least a portion of the inductive structure contacts the package substrate. The circuitry is coupled to the inductive structure through wires to the package substrate.

A module includes an electronic component, an enclosure at least partially enclosing the electronic component and defining a module interface at which the module is configured to be mounted on a mounting base, and a gas flow-inhibiting sealing at the module interface and configured to inhibit gas from propagating from an exterior of the module towards the electronic component. An electronic device that includes the module and a method of manufacturing the module are also described.

The present disclosure provides a semiconductor packaging method and a semiconductor package device. The semiconductor packaging method includes providing a chip, where the chip includes a chip substrate having a front surface and a back surface, where the front surface includes a photosensitive region; soldering pads disposed at the front surface of the chip substrate surrounding the photosensitive region; a metal part formed on a side of each soldering pad facing away from the chip substrate; and a transparent protective layer formed on the front surface of the chip substrate, where a first end of the metal part is exposed by protruding over a surface of the transparent protective layer. The method further includes electrically connecting the first end of the metal part to a circuit board using a conductive connection part, such that the chip is electrically connected to the circuit board.

The invention relates to a method for electrically contacting a component (10) (for example a power component and/or a (semiconductor) component having at least one transistor, preferably an IGBT (insulated-gate bipolar transistor)) having at least one contact (40, 50), at least one open-pored contact piece (60, 70) is galvanically (electrochemically or free of external current) connected to at least one contact (40, 50). In this way, a component module is achieved. The contact (40, 50) is preferably a flat part or has a contact surface, the largest planar extent thereof being greater than an extension of the contact (40, 50) perpendicular to said contact surface. The temperature of the galvanic connection is at most 100° C., preferably at most 60° C., advantageously at most 20° C. and ideally at most 5° C. and/or deviates from the operating temperature of the component by at most 50° C., preferably by at most 20° C., in particular by at most 10° C. and ideally by at most 5° C., preferably by at most 2° C. The component (10) can be contacted by means of the contact piece (60, 70) with a further component, a current conductor and/or a substrate (90). Preferably, a component (10) having two contacts (40, 50) on opposite sides of the component (10) is used, wherein at least one open-pored contact piece (60, 70) is galvanically connected to each contact (40, 50).

A method of manufacturing a chip module comprises a step of disposing a first electronic element 13 on a first jig 500, a step of disposing a first connector 60 on the first electronic element 13 via a conductive adhesive 5, a step of disposing a second electronic element 23 on the first connector 60 via a conductive adhesive 5, a step of disposing a second connector 70 on a second jig 550, a step of reversing the second jig in a state where the second connector 70 is fixed to the second jig 550 and disposing the second connector 70 on the second electronic element 23 via a conductive adhesive 5, and a step of curing the conductive adhesives 5.