Patent classifications
H
ELECTRICITY
Load children
H01
ELECTRIC ELEMENTS
Load children
H01L
SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
Load children
2224/00
Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
Load children Filter patents View analytics View as hierarchy Open in page
H01L2224/01
Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
Load children Filter patents View analytics View as hierarchy Open in page
H01L2224/26
Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
Load children Filter patents View analytics View as hierarchy Open in page
H01L2224/28
Structure, shape, material or disposition of the layer connectors prior to the connecting process
Load children Filter patents View analytics View as hierarchy Open in page
H01L2224/29
of an individual layer connector
Load children Filter patents View analytics View as hierarchy Open in page
H01L2224/29001
Core members of the layer connector
Load children Filter patents View analytics View as hierarchy Open in page
H01L2224/29198
with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
Load children Filter patents View analytics View as hierarchy Open in page
H01L2224/292
with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
Load children Filter patents View analytics View as hierarchy Open in page
H01L2224/29201
the principal constituent melting at a temperature of less than 400°C
Load children Filter patents View analytics View as hierarchy Open in page

H01L2224/29201

SOLDER MATERIAL FOR SEMICONDUCTOR DEVICE
20180033761 · 2018-02-01 · ·

To provide a lead-free solder the heat resistance temperature of which is high and thermal conductive property of which are not changed in a high temperature range. A semiconductor device of the present invention includes a solder material containing more than 5.0% by mass and 10.0% by mass or less of Sb and 2.0 to 4.0% by mass of Ag, and the remainder consisting of Sn and inevitable impurities, and a bonding layer including the solder material, which is formed between a semiconductor element and a substrate electrode or a lead frame.

Micro LED display and manufacturing method therefor
12218295 · 2025-02-04 · ·

Various embodiments of the disclosure disclose a method for manufacturing a micro Light Emitting Diode (LED) display. The disclosed manufacturing method may include coating a face of a substrate including a circuit portion with a first thickness of a polymer adhesive solution containing a plurality of metal particles, attaching an array of micro LED chips on the polymer adhesive solution, physically connecting a connection pad for each of the array of micro LED chips to the metal particles through heating and pressing the attached plurality of micro LED chips to descend through the polymer adhesive solution, and chemically bonding the metal particles to the connection pad and the circuit portion through heating and pressing so that the micro LED chips are electrically connected to the circuit portion. Various other embodiments are also possible.