H01L2224/29217

CHIP BONDING COMPOSITION FOR POWER SEMICONDUCTOR PACKAGE

Disclosed is a chip bonding composition for a power semiconductor package, which, by comprising an epoxy resin including glycidyl amine-based epoxy resin and bisphenol A type epoxy resin, a glycidyl ether-based diluent, and a polysilsesquioxane (PSQ) resin, has high thermal conductivity and adhesion, high heat dissipation characteristics, and low modulus characteristics. The chip bonding composition according to the present invention comprises: silver powder; an epoxy resin; a curing agent; a catalyst; a glycidyl ether-based diluent; and a PSQ resin.