A thermosetting sheet according to the present invention includes a thermosetting resin and a thermoplastic resin, in which a thickness change rate when a temperature is changed from 25° C. to 200° C. is 0% or more and 10% or less.

A circuit element is formed on a substrate made of a compound semiconductor. A bonding pad is disposed on the circuit element so as to at least partially overlap the circuit element. The bonding pad includes a first metal film and a second metal film formed on the first metal film. A metal material of the second metal film has a higher Young's modulus than a metal material of the first metal film.

A circuit element is formed on a substrate made of a compound semiconductor. A bonding pad is disposed on the circuit element so as to at least partially overlap the circuit element. The bonding pad includes a first metal film and a second metal film formed on the first metal film. A metal material of the second metal film has a higher Young's modulus than a metal material of the first metal film.

A semiconductor device includes a vapor chamber lid for high power applications such as chip-on-wafer-on-substrate (CoWoS) applications using high performance processors (e.g., graphics processing unit (GPU)) and methods of manufacturing the same. The vapor chamber lid provides a thermal solution which enhances the thermal performance of a package with multiple chips. The vapor chamber lid improves hot spot dissipation in high performance chips, for example, at the three-dimensional (3D-IC) packaging level.

A semiconductor device includes a vapor chamber lid for high power applications such as chip-on-wafer-on-substrate (CoWoS) applications using high performance processors (e.g., graphics processing unit (GPU)) and methods of manufacturing the same. The vapor chamber lid provides a thermal solution which enhances the thermal performance of a package with multiple chips. The vapor chamber lid improves hot spot dissipation in high performance chips, for example, at the three-dimensional (3D-IC) packaging level.

The present disclosure relates to a thermally enhanced package, which includes a carrier, a thinned die over the carrier, a mold compound, and a heat extractor. The thinned die includes a device layer over the carrier and a dielectric layer over the device layer. The mold compound resides over the carrier, surrounds the thinned die, and extends beyond a top surface of the thinned die to define an opening within the mold compound and over the thinned die. The top surface of the thinned die is at a bottom of the opening. At least a portion of the heat extractor is inserted into the opening and in thermal contact with the thinned die. Herein the heat extractor is formed of a metal or an alloy.

The present disclosure relates to a thermally enhanced package, which includes a carrier, a thinned die over the carrier, a mold compound, and a heat extractor. The thinned die includes a device layer over the carrier and a dielectric layer over the device layer. The mold compound resides over the carrier, surrounds the thinned die, and extends beyond a top surface of the thinned die to define an opening within the mold compound and over the thinned die. The top surface of the thinned die is at a bottom of the opening. At least a portion of the heat extractor is inserted into the opening and in thermal contact with the thinned die. Herein the heat extractor is formed of a metal or an alloy.

A method of and system for adhesive bonding by a) providing a polymerizable adhesive composition on a surface of an element to be bonded to form an assembly; b) irradiating the assembly with radiation at a first wavelength capable of vulcanization of bonds in the polymerizable adhesive composition by activation of sulfur-containing compound with at least one selected from x-ray, e-beam, visible, or infrared light to thereby generate ultraviolet light in the polymerizable adhesive composition; and c) adhesively joining two or more components together by way of the polymerizable adhesive composition, and a curable polymer for use therein.

A method for producing a multiplicity of semiconductor chips (13) is provided, comprising the following steps: providing a wafer (1) comprising a multiplicity of semiconductor bodies (2), wherein separating lines (9) are arranged between the semiconductor bodies (2), depositing a contact layer (10) on the wafer (1), wherein the material of the contact layer (10) is chosen from the following group: platinum, rhodium, palladium, gold, and the contact layer (10) has a thickness of between 8 nanometres and 250 nanometres, inclusive, applying; the wafer (1) to a film (11), at least partially severing the wafer (1) in the vertical direction along the separating lines (9) or introducing fracture nuclei (12) into the wafer (1) along the separating lines (9), and breaking the wafer (1) along the separating lines (9) or expanding the film (11) such that a spatial separation of the semiconductor chips (13) takes place, wherein the contact layer (10) is also separated. A semiconductor chip, a component and a method for producing the latter are also provided.

A method of and system for adhesive bonding by a) providing a polymerizable adhesive composition on a surface of an element to be bonded to form an assembly; b) irradiating the assembly with radiation at a first wavelength capable of vulcanization of bonds in the polymerizable adhesive composition by activation of sulfur-containing compound with at least one selected from x-ray, e-beam, visible, or infrared light to thereby generate ultraviolet light in the polymerizable adhesive composition; and c) adhesively joining two or more components together by way of the polymerizable adhesive composition, and a curable polymer for use therein.