There is provided a conductive particle including a core particle containing a resin material, and a surface layer that covers a surface of the core particle and contains a solder material, in which a melting point of the solder material is equal to or lower than a softening point of the resin material.

There is provided a conductive particle including a core particle containing a resin material, and a surface layer that covers a surface of the core particle and contains a solder material, in which a melting point of the solder material is equal to or lower than a softening point of the resin material.

The present invention discloses a assembling method, a manufacturing method, an device and an electronic apparatus of flip-die. The method for assembling a flip-die, comprises: temporarily bonding the flip-die onto a laser-transparent first substrate, wherein bumps of the flip-die are located on the side of the flip-die opposite to the first substrate; aligning the bumps with pads on a receiving substrate; irradiating the original substrate with laser from the first substrate side to lift-off the flip-die from the first substrate; and attaching the flip-die on the receiving substrate. A faster assembly rate can be achieved by using the present invention. A smaller chip size can be achieved by using the present invention. A lower profile can be achieved by using the present invention.

The present invention discloses a assembling method, a manufacturing method, an device and an electronic apparatus of flip-die. The method for assembling a flip-die, comprises: temporarily bonding the flip-die onto a laser-transparent first substrate, wherein bumps of the flip-die are located on the side of the flip-die opposite to the first substrate; aligning the bumps with pads on a receiving substrate; irradiating the original substrate with laser from the first substrate side to lift-off the flip-die from the first substrate; and attaching the flip-die on the receiving substrate. A faster assembly rate can be achieved by using the present invention. A smaller chip size can be achieved by using the present invention. A lower profile can be achieved by using the present invention.

An adhesive for a semiconductor, comprising an epoxy resin, a curing agent, and a compound having a group represented by the following formula (1): ##STR00001##
wherein R.sup.1 represents an electron-donating group.

An anisotropic conductive film whereby electrically conductive particles can be sufficiently captured at each connection terminal while suppressing the occurrence of shorts and conduction reliability can be improved even in cases where connecting finely pitched connection terminals. The anisotropic conductive film has a structure in which electrically conductive particle units in which electrically conductive particles are arranged in a row, or electrically conductive particle units in which electrically conductive particles are arranged in a row and independent electrically conductive particles are disposed in a lattice form in an electrically insulating adhesive layer. The shortest distance La between electrically conductive particles selected from adjacent electrically conductive particle units and the independent electrically conductive particles is not less than 0.5 times the particle diameter of the electrically conductive particles and.

An anisotropic conductive film whereby electrically conductive particles can be sufficiently captured at each connection terminal while suppressing the occurrence of shorts and conduction reliability can be improved even in cases where connecting finely pitched connection terminals. The anisotropic conductive film has a structure in which electrically conductive particle units in which electrically conductive particles are arranged in a row, or electrically conductive particle units in which electrically conductive particles are arranged in a row and independent electrically conductive particles are disposed in a lattice form in an electrically insulating adhesive layer. The shortest distance La between electrically conductive particles selected from adjacent electrically conductive particle units and the independent electrically conductive particles is not less than 0.5 times the particle diameter of the electrically conductive particles and.

A semiconductor chip 10 flip-chip mounted on a first surface 32 of a wiring substrate 30, a semiconductor chip 20 flip-chip mounted on a second surface 33 of the wiring substrate 30, a sealing resin 71 covering the semiconductor chip 10, a sealing resin 72 covering the semiconductor chip 20, a plurality of conductive posts provided to penetrate through the sealing resin 72, and a plurality of solder balls mounted on second ends of the plurality of conductive posts exposed from the sealing resin 72 are provided; and the mounting directions of the semiconductor chips 10 and 20 are mutually different by 90°. Both of the planar shapes of the semiconductor chips 10 and 20 are rectangular shapes, the semiconductor chip 10 is mounted so that the long sides thereof are parallel to the long sides of the wiring substrate 30, and the semiconductor chip 20 is mounted so that the long sides thereof are perpendicular to the long sides of the wiring substrate 30.

A semiconductor chip 10 flip-chip mounted on a first surface 32 of a wiring substrate 30, a semiconductor chip 20 flip-chip mounted on a second surface 33 of the wiring substrate 30, a sealing resin 71 covering the semiconductor chip 10, a sealing resin 72 covering the semiconductor chip 20, a plurality of conductive posts provided to penetrate through the sealing resin 72, and a plurality of solder balls mounted on second ends of the plurality of conductive posts exposed from the sealing resin 72 are provided; and the mounting directions of the semiconductor chips 10 and 20 are mutually different by 90°. Both of the planar shapes of the semiconductor chips 10 and 20 are rectangular shapes, the semiconductor chip 10 is mounted so that the long sides thereof are parallel to the long sides of the wiring substrate 30, and the semiconductor chip 20 is mounted so that the long sides thereof are perpendicular to the long sides of the wiring substrate 30.

A display device including pads; an anisotropic conductive film on the pads; and a connection member bonded to the pads through the film, the connection member including bumps, the film includes a supporting layer including a plurality of conductive particles having a part protruded from a first and second surface of the support layer; a first adhesive layer contacting the first surface and the part of each conductive particle protruding from the first surface; and a second adhesive layer contacting the second surface and the part of each conductive particle protruding from the second surface, and wherein the first or second adhesive layer is positioned at both of a first and second region of the display device, the first region being a region in which the pads and the bumps are overlapped and the second region being a region in which the pads and the bumps are not overlapped.