The present invention provides a method for producing a semiconductor device, including: a semiconductor chip-mounting step of subsequently pressing a plurality of semiconductor chips by a first pressing member to respectively bond the plurality of semiconductor chips to a plurality of mounting areas provided on a substrate, wherein the bonding is performed in a state where adhesive sheets are respectively interposed between the plurality of semiconductor chips and the plurality of mounting areas, each of the adhesive sheets includes sinterable metal particles that can be sintered by heating at a temperature of 400° C. or less, and the first pressing member is heated to a temperature, at which the sinterable metal particles can be sintered.

A thermosetting sheet according to the present invention includes: a thermosetting resin; a thermoplastic resin; and conductive particles. The conductive particles includes silver particles having an average particle size D.sub.50 of 0.01 μm or more and 10 μm or less, and having a circularity in cross section of 0.7 or more. The thermosetting sheet has a viscosity at 100° C. of 20 kPa.Math.s or more and 3000 kPa.Math.s or less.

A thermosetting sheet according to the present invention includes: a thermosetting resin; a thermoplastic resin; and conductive particles. The conductive particles includes silver particles having an average particle size D.sub.50 of 0.01 μm or more and 10 μm or less, and having a circularity in cross section of 0.7 or more. The thermosetting sheet has a viscosity at 100° C. of 20 kPa.Math.s or more and 3000 kPa.Math.s or less.

Disclosed herein are microelectronic structures including bridges, as well as related assemblies and methods. In some embodiments, a microelectronic structure may include a substrate and a bridge.

Disclosed herein are microelectronic structures including bridges, as well as related assemblies and methods. In some embodiments, a microelectronic structure may include a substrate and a bridge.

A first anisotropic conductive film 1A or a second anisotropic conductive film 1B has a first insulating resin layer 2 and a second insulating resin layer 3. The first insulating resin layer 2 is formed of a photopolymerized resin, and the second insulating resin layer 3 is formed of a polymerizable resin. Conductive particles 10 are disposed in a single layer on a surface of the first insulating resin layer 2 on a side of the second insulating resin layer 3. The first anisotropic conductive film further has a third insulating resin layer 4 formed of a polymerizable resin, and the second anisotropic conductive film 1B has an intermediate insulating resin layer 6. The intermediate insulating resin layer 6 is formed of a resin containing no polymerization initiator, and is in contact with the conductive particles 10. These anisotropic conductive films have favorable connection reliability.

A first anisotropic conductive film 1A or a second anisotropic conductive film 1B has a first insulating resin layer 2 and a second insulating resin layer 3. The first insulating resin layer 2 is formed of a photopolymerized resin, and the second insulating resin layer 3 is formed of a polymerizable resin. Conductive particles 10 are disposed in a single layer on a surface of the first insulating resin layer 2 on a side of the second insulating resin layer 3. The first anisotropic conductive film further has a third insulating resin layer 4 formed of a polymerizable resin, and the second anisotropic conductive film 1B has an intermediate insulating resin layer 6. The intermediate insulating resin layer 6 is formed of a resin containing no polymerization initiator, and is in contact with the conductive particles 10. These anisotropic conductive films have favorable connection reliability.

Disclosed is a temporary protective film for semiconductor sealing molding 10 including a support film 1; and an adhesive layer 2 provided on the support film 1 and containing an acrylic rubber. A solid shear modulus at 200° C. of the temporary protective film for semiconductor sealing molding 10 may be 5.0 MPa or higher.

Disclosed is a temporary protective film for semiconductor sealing molding 10 including a support film 1; and an adhesive layer 2 provided on the support film 1 and containing an acrylic rubber. A solid shear modulus at 200° C. of the temporary protective film for semiconductor sealing molding 10 may be 5.0 MPa or higher.

In some examples, an electronic device comprises a first component having a surface, a second component having a surface, and a bond layer positioned between the surfaces of the first and second components to couple the first and second components to each other. The bond layer includes a set of metallic nanowires and a dielectric portion. The dielectric portion comprises a polymer matrix and dielectric nanoparticles.