A semiconductor package includes a redistribution structure, at least one semiconductor device, a heat dissipation component, and an encapsulating material. The at least one semiconductor device is disposed on and electrically connected to the redistribution structure. The heat dissipation component is disposed on the redistribution structure and includes a concave portion for receiving the at least one semiconductor device and an extending portion connected to the concave portion and contacting the redistribution structure, wherein the concave portion contacts the at least one semiconductor device. The encapsulating material is disposed over the redistribution structure, wherein the encapsulating material fills the concave portion and encapsulates the at least one semiconductor device.

A semiconductor package includes a redistribution structure, at least one semiconductor device, a heat dissipation component, and an encapsulating material. The at least one semiconductor device is disposed on and electrically connected to the redistribution structure. The heat dissipation component is disposed on the redistribution structure and includes a concave portion for receiving the at least one semiconductor device and an extending portion connected to the concave portion and contacting the redistribution structure, wherein the concave portion contacts the at least one semiconductor device. The encapsulating material is disposed over the redistribution structure, wherein the encapsulating material fills the concave portion and encapsulates the at least one semiconductor device.

A thermosetting composition for use as an underfill material contains: a mono- or bifunctional acrylic compound; a thermo-radical polymerization initiator; silica; and an elastomer including a 1,2-vinyl group. The thermosetting composition is liquid and has a property of turning, when cured thermally, into a cured product having a relative dielectric constant of 3.2 or less at 25° C. and a dielectric loss tangent of 0.013 or less at 25° C.

A thermosetting composition for use as an underfill material contains: a mono- or bifunctional acrylic compound; a thermo-radical polymerization initiator; silica; and an elastomer including a 1,2-vinyl group. The thermosetting composition is liquid and has a property of turning, when cured thermally, into a cured product having a relative dielectric constant of 3.2 or less at 25° C. and a dielectric loss tangent of 0.013 or less at 25° C.

In some examples, an electronic device comprises a first component having a surface, a second component having a surface, and a bond layer positioned between the surfaces of the first and second components to couple the first and second components to each other. The bond layer includes a set of metallic nanowires and a dielectric portion. The dielectric portion comprises a polymer matrix and dielectric nanoparticles.

In some examples, an electronic device comprises a first component having a surface, a second component having a surface, and a bond layer positioned between the surfaces of the first and second components to couple the first and second components to each other. The bond layer includes a set of metallic nanowires and a dielectric portion. The dielectric portion comprises a polymer matrix and dielectric nanoparticles.

A semiconductor package includes a plurality of first semiconductor structures that are stacked on a package substrate and are offset from each other in a first direction, and a plurality of first adhesive layers disposed between the first semiconductor structures. Each of the first semiconductor structures includes a first sub-chip and a second sub-chip in contact with a part of a top surface of the first sub-chip. The first adhesive layers are disposed between and are in contact with the first sub-chips. The first adhesive layers are spaced apart from the second sub-chips. A thickness of each of the first adhesive layers is less than a thickness of each of the second sub-chips. The thickness of the second sub-chip is in a range of about 13 μm to about 20 μm.

A semiconductor package includes a plurality of first semiconductor structures that are stacked on a package substrate and are offset from each other in a first direction, and a plurality of first adhesive layers disposed between the first semiconductor structures. Each of the first semiconductor structures includes a first sub-chip and a second sub-chip in contact with a part of a top surface of the first sub-chip. The first adhesive layers are disposed between and are in contact with the first sub-chips. The first adhesive layers are spaced apart from the second sub-chips. A thickness of each of the first adhesive layers is less than a thickness of each of the second sub-chips. The thickness of the second sub-chip is in a range of about 13 μm to about 20 μm.

A cooling plate assembly and electronic device having the same are provided which utilize active and passive cooling devices for improved thermal management of one or more chip package assemblies included in the electronic device. In one example, a cooling plate assembly is provided that includes a cooling plate having a first surface and an opposing second surface, a first active cooling device coupled to the first surface of the cooling plate, and a first passive cooling device coupled to the second surface of the cooling plate.

A cooling plate assembly and electronic device having the same are provided which utilize active and passive cooling devices for improved thermal management of one or more chip package assemblies included in the electronic device. In one example, a cooling plate assembly is provided that includes a cooling plate having a first surface and an opposing second surface, a first active cooling device coupled to the first surface of the cooling plate, and a first passive cooling device coupled to the second surface of the cooling plate.