A light emitting diode (LED) element is provided. The LED element includes: an active layer configured to generate light; a first semiconductor layer disposed on a first surface of the active layer and doped with an n-type dopant; a second semiconductor layer disposed on a second surface of the active layer opposite to the first surface, the second semiconductor layer being doped with a p-type dopant; a first electrode pad and a second electrode pad electrically connected to the first semiconductor layer and the second semiconductor layer, respectively, the first electrode pad comprising a first contact surface and the second electrode pad comprising a second contact surface; and a conductive filler disposed on at least one contact surface from among the first contact surface and the second contact surface to increase a contact area of the at least one contact surface.

A light emitting diode (LED) element is provided. The LED element includes: an active layer configured to generate light; a first semiconductor layer disposed on a first surface of the active layer and doped with an n-type dopant; a second semiconductor layer disposed on a second surface of the active layer opposite to the first surface, the second semiconductor layer being doped with a p-type dopant; a first electrode pad and a second electrode pad electrically connected to the first semiconductor layer and the second semiconductor layer, respectively, the first electrode pad comprising a first contact surface and the second electrode pad comprising a second contact surface; and a conductive filler disposed on at least one contact surface from among the first contact surface and the second contact surface to increase a contact area of the at least one contact surface.

A light-emitting module includes a common carrier; a plurality of semiconductor devices formed on the common carrier, and each of the plurality of semiconductor devices including three semiconductor dies; a carrier including a connecting surface; a third bonding pad and a fourth bonding pad formed on the connecting surface; and a connecting layer. One of the three semiconductor dies includes a stacking structure; a first bonding pad; and a second bonding pad with a shortest distance less than 150 microns between the first bonding pad. The connecting layer includes a first conductive part including a first conductive material having a first shape; and a blocking part covering the first conductive part and including a second conductive material having a second shape with a diameter in a cross-sectional view. The first shape has a height greater than the diameter.

A light-emitting module includes a common carrier; a plurality of semiconductor devices formed on the common carrier, and each of the plurality of semiconductor devices including three semiconductor dies; a carrier including a connecting surface; a third bonding pad and a fourth bonding pad formed on the connecting surface; and a connecting layer. One of the three semiconductor dies includes a stacking structure; a first bonding pad; and a second bonding pad with a shortest distance less than 150 microns between the first bonding pad. The connecting layer includes a first conductive part including a first conductive material having a first shape; and a blocking part covering the first conductive part and including a second conductive material having a second shape with a diameter in a cross-sectional view. The first shape has a height greater than the diameter.

An anisotropic conductive film has a first insulating resin layer and a second insulating resin layer. The first insulating resin layer is formed of a photopolymerized resin, the second insulating resin layer is formed of a thermo-cationically or thermo-anionically polymerizable resin, a photo-cationically or photo-anionically polymerizable resin, a thermo-radically polymerizable resin, or a photo-radically polymerizable resin, and conductive particles for anisotropic conductive connection are disposed in a single layer on a surface of the first insulating resin layer on a side of the second insulating resin layer. The elastic modulus of the anisotropic conductive film as a whole is 0.13 MPa or more.

An anisotropic conductive film has a first insulating resin layer and a second insulating resin layer. The first insulating resin layer is formed of a photopolymerized resin, the second insulating resin layer is formed of a thermo-cationically or thermo-anionically polymerizable resin, a photo-cationically or photo-anionically polymerizable resin, a thermo-radically polymerizable resin, or a photo-radically polymerizable resin, and conductive particles for anisotropic conductive connection are disposed in a single layer on a surface of the first insulating resin layer on a side of the second insulating resin layer. The elastic modulus of the anisotropic conductive film as a whole is 0.13 MPa or more.

A method of manufacturing a micro light emitting diode (LED) display module. The method of manufacturing a micro LED display module may include: pressing a plurality of micro LEDs disposed on a substrate to which an adhesive layer is applied, to electrically connect the plurality of micro LEDs to electrode pads of the substrate; performing testing to detect whether at least one of the plurality of micro LEDs is defective in a state in which the plurality of micro LEDs are pressurized and the adhesive layer is uncured; and based on detecting that at least one of the plurality of micro LEDs is defective, performing control to harden the adhesive layer.

A method of manufacturing a micro light emitting diode (LED) display module. The method of manufacturing a micro LED display module may include: pressing a plurality of micro LEDs disposed on a substrate to which an adhesive layer is applied, to electrically connect the plurality of micro LEDs to electrode pads of the substrate; performing testing to detect whether at least one of the plurality of micro LEDs is defective in a state in which the plurality of micro LEDs are pressurized and the adhesive layer is uncured; and based on detecting that at least one of the plurality of micro LEDs is defective, performing control to harden the adhesive layer.

A method of manufacturing a micro light emitting diode (LED) display module includes stacking a connecting layer onto a transfer substrate on which a micro LED is disposed; positioning the transfer substrate above a display substrate, in which a plurality of thin-film transistors are formed, so that the micro LED faces the display substrate; transferring, to the display substrate, the micro LED and a connecting member that is in contact with the micro LED and is separated from the connecting layer by using a laser transfer method; and heating the micro LED and compressing the micro LED against the display substrate to bond the micro LED to the display substrate by the connecting member.

A method of manufacturing a micro light emitting diode (LED) display module includes stacking a connecting layer onto a transfer substrate on which a micro LED is disposed; positioning the transfer substrate above a display substrate, in which a plurality of thin-film transistors are formed, so that the micro LED faces the display substrate; transferring, to the display substrate, the micro LED and a connecting member that is in contact with the micro LED and is separated from the connecting layer by using a laser transfer method; and heating the micro LED and compressing the micro LED against the display substrate to bond the micro LED to the display substrate by the connecting member.