A method of forming a bonding element including a first transient liquid phase (TLP) bonding element including a first material and a second material, the first material having a higher melting point than the second material, a ratio of a quantity of the first material and the second material in the first TLP bonding element having a first value, and a second TLP bonding element including the first material and the second material, a ratio of a quantity of the first material and the second material in the second TLP bonding element having a second value different from the first value.

A method of forming a bonding element including a first transient liquid phase (TLP) bonding element including a first material and a second material, the first material having a higher melting point than the second material, a ratio of a quantity of the first material and the second material in the first TLP bonding element having a first value, and a second TLP bonding element including the first material and the second material, a ratio of a quantity of the first material and the second material in the second TLP bonding element having a second value different from the first value.

The power semiconductor apparatus includes: a semiconductor device 401; a bonding layer on chip 416 disposed on an upper surface of the semiconductor device; and a metal lead 419 disposed on the upper surface of the semiconductor device and bonded to the bonding layer on chip, wherein the metal lead 420 has a three-laminated structure including: a second metal layer 420b having a CTE equal to or less than 510.sup.6/ C., for example; and a first metal layer 420a and a third metal layer 420c sandwiching the second metal layer and having a CTE equal to or greater than the CTE of the second metal layer. Provided is a power semiconductor apparatus capable of improving reliability thereof by reducing a thermal stress to a bonding layer between a semiconductor power device and a metal lead positioned on an upper surface thereof, and reducing a resistance of the metal lead.

The power semiconductor apparatus includes: a semiconductor device 401; a bonding layer on chip 416 disposed on an upper surface of the semiconductor device; and a metal lead 419 disposed on the upper surface of the semiconductor device and bonded to the bonding layer on chip, wherein the metal lead 420 has a three-laminated structure including: a second metal layer 420b having a CTE equal to or less than 510.sup.6/ C., for example; and a first metal layer 420a and a third metal layer 420c sandwiching the second metal layer and having a CTE equal to or greater than the CTE of the second metal layer. Provided is a power semiconductor apparatus capable of improving reliability thereof by reducing a thermal stress to a bonding layer between a semiconductor power device and a metal lead positioned on an upper surface thereof, and reducing a resistance of the metal lead.

Provides is a laser bonding method. The method includes forming a bonding part on a substrate; aligning a bonding target on the bonding part and bonding the bonding part and the bonding target. The bonding includes heating the bonding part using a laser. The bonding part formed on the substrate includes an adhesive layer and a conductive particle located in the adhesive layer.

Provides is a laser bonding method. The method includes forming a bonding part on a substrate; aligning a bonding target on the bonding part and bonding the bonding part and the bonding target. The bonding includes heating the bonding part using a laser. The bonding part formed on the substrate includes an adhesive layer and a conductive particle located in the adhesive layer.

A non-conductive magnetic shield material is provided for use in magnetic shields of semiconductor packaging. The material is made magnetic by the incorporation of ferromagnetic particles into a polymer matrix, and is made non-conductive by the provision of an insulating coating on the ferromagnetic particles.

A non-conductive magnetic shield material is provided for use in magnetic shields of semiconductor packaging. The material is made magnetic by the incorporation of ferromagnetic particles into a polymer matrix, and is made non-conductive by the provision of an insulating coating on the ferromagnetic particles.

A display panel measures a contact resistance of an adhesive portion to evaluate adhesion quality of an integrated circuit mounted thereon. The display panel includes a plurality of light-emitting elements, a first pad part including a plurality of first effective pads electrically connected to the light-emitting elements, and n (n being a natural number equal to or greater than 2) first measuring pads insulated from the light-emitting elements, a conductive adhesive film on the first pad part and including a plurality of conductive balls, an integrated circuit on the conductive adhesive film, and including an internal line electrically connected to the first measuring pads by the conductive balls, and a second pad part including a plurality of second effective pads electrically connected to the first effective pads, and 2n second measuring pads electrically connected to the first measuring pads.

A display panel measures a contact resistance of an adhesive portion to evaluate adhesion quality of an integrated circuit mounted thereon. The display panel includes a plurality of light-emitting elements, a first pad part including a plurality of first effective pads electrically connected to the light-emitting elements, and n (n being a natural number equal to or greater than 2) first measuring pads insulated from the light-emitting elements, a conductive adhesive film on the first pad part and including a plurality of conductive balls, an integrated circuit on the conductive adhesive film, and including an internal line electrically connected to the first measuring pads by the conductive balls, and a second pad part including a plurality of second effective pads electrically connected to the first effective pads, and 2n second measuring pads electrically connected to the first measuring pads.