H01L2224/2949

ANISOTROPIC CONDUCTIVE FILM, MANUFACTURING METHOD THEREOF, AND CONNECTION STRUCTURE

An anisotropic conductive film includes, as conductive particles for anisotropic conductive connection, metal particles such as solder particles having on the surface an oxide film. In this anisotropic conductive film, the metal particles are contained in an insulating film and regularly arranged as viewed in a plan view. A flux is disposed to be in contact with, or in proximity to, at least one of ends of the metal particles on a front surface side of the anisotropic conductive film and a rear surface side of the anisotropic conductive film. Preferable metal particles are solder particles. Preferably, the insulating film has a structure of two layers, and the metal particles are disposed between the two layers.

SINTERABLE BONDING MATERIAL AND SEMICONDUCTOR DEVICE USING THE SAME
20170294404 · 2017-10-12 ·

An objective of the present invention is to provide a sinterable bonding material capable of providing a bonded article having a long-term reliability. The present invention relates to a sinterable bonding material comprising a silver filler and resin particles, wherein the silver filler comprises a flake-shaped filler having an arithmetic average roughness (Ra) of 10 nm or less; and the resin particles have an elastic modulus (E) of 10 GPa or less, and a heat decomposition temperature of 200° C. or more. The sintered product of the sinterable bonding material of the present invention is excellent in bonding strength and heat-release characteristics, and has an improved stress relaxation ability.

DIE AND SUBSTRATE ASSEMBLY WITH GRADED DENSITY BONDING LAYER

A die and substrate assembly is disclosed for a die with electronic circuitry and a substrate. A sintered bonding layer of sintered metal is disposed between the die and the substrate. The sintered bonding layer includes a plurality of zones having different sintered metal densities. The plurality of zones are distributed along one or more horizontal axes of the sintered bonding layer, along one or more vertical axes of the sintered bonding layer or along both one or more horizontal and one or more vertical axes of the sintered bonding layer.

Compliant Electronic Component Interconnection
20220052012 · 2022-02-17 ·

A connector for coupling an electronic component having an external connector pad to another structure, comprising an anisotropic conductive elastomer or adhesive composite comprising a plurality of separate columns of conductive particles held in an insulating matrix, with a top particle exposed to a surface of the matrix, wherein at least the top particle is coated with a metal that can permanently bond to the connector pad of the electronic component. Also disclosed are a related method, and a related electronic assembly.

Compliant Electronic Component Interconnection
20220052012 · 2022-02-17 ·

A connector for coupling an electronic component having an external connector pad to another structure, comprising an anisotropic conductive elastomer or adhesive composite comprising a plurality of separate columns of conductive particles held in an insulating matrix, with a top particle exposed to a surface of the matrix, wherein at least the top particle is coated with a metal that can permanently bond to the connector pad of the electronic component. Also disclosed are a related method, and a related electronic assembly.

Adhesive for mounting flip chip for use in a method for producing a semiconductor device

The present invention aims to provide a method for producing a semiconductor device, the method being capable of achieving high reliability by suppressing voids. The present invention also aims to provide a flip-chip mounting adhesive for use in the method for producing a semiconductor device. The present invention relates to a method for producing a semiconductor device, including: step 1 of positioning a semiconductor chip on a substrate via an adhesive, the semiconductor chip including bump electrodes each having an end made of solder; step 2 of heating the semiconductor chip at a temperature of the melting point of the solder or higher to solder and bond the bump electrodes of the semiconductor chip to an electrode portion of the substrate, and concurrently to temporarily attach the adhesive; and step 3 of removing voids by heating the adhesive under a pressurized atmosphere, wherein the adhesive has an activation energy ΔE of 100 kJ/mol or less, a reaction rate of 20% or less at 2 seconds at 260° C., and a reaction rate of 40% or less at 4 seconds at 260° C., as determined by differential scanning calorimetry and Ozawa method.

Joining material and joining method using same

There are provided a bonding material, which can prevent voids from being generated in a silver bonding layer by preventing the entrainment of bubbles during the formation of a coating film even if the coating film is thickened, and a bonding method using the same. The bonding material of a silver paste includes fine silver particles, a solvent and an addition agent, wherein the solvent contains a first solvent of a diol, such as octanediol, and a second solvent which is a polar solvent (preferably one or more selected from the group consisting of dibutyl diglycol, hexyl diglycol, decanol and dodecanol) having a lower surface tension than that of the first solvent and wherein the addition agent is a triol.

Joining material and joining method using same

There are provided a bonding material, which can prevent voids from being generated in a silver bonding layer by preventing the entrainment of bubbles during the formation of a coating film even if the coating film is thickened, and a bonding method using the same. The bonding material of a silver paste includes fine silver particles, a solvent and an addition agent, wherein the solvent contains a first solvent of a diol, such as octanediol, and a second solvent which is a polar solvent (preferably one or more selected from the group consisting of dibutyl diglycol, hexyl diglycol, decanol and dodecanol) having a lower surface tension than that of the first solvent and wherein the addition agent is a triol.

Conductive paste and die bonding method

Provided are: a conductive paste in which sinterability of silver particles the conductive paste can be easily controlled by using silver particles having predetermined crystal transformation characteristics defined by an XRD analysis, and after a sintering treatment, excellent electrical conductivity and thermal conductivity can be stably obtained; and a die bonding method using the conductive paste. Disclosed is a conductive paste which includes silver particles having a volume average particle size of 0.1 to 30 μm as a sinterable conductive material, and a dispersing medium for making a paste-like form, and in which when the integrated intensity of the peak at 2θ=38°±0.2° in the X-ray diffraction chart obtainable by an XRD analysis before a sintering treatment of the silver particles is designated as S1, and the integrated intensity of the peak at 2θ=38°±0.2° in the X-ray diffraction chart obtainable by an XRD analysis after a sintering treatment (250° C., 60 minutes) of the silver particles is designated as S2, the value of S2/S1 is adjusted to a value within the range of 0.2 to 0.8.

THERMOSETTING SHEET AND DICING DIE BONDING FILM
20210403784 · 2021-12-30 · ·

A thermosetting sheet according to the present invention includes: a thermosetting resin; a thermoplastic resin; and conductive particles. The conductive particles includes silver particles having an average particle size D.sub.50 of 0.01 μm or more and 10 μm or less, and having a circularity in cross section of 0.7 or more. The thermosetting sheet has a viscosity at 100° C. of 20 kPa.Math.s or more and 3000 kPa.Math.s or less.