A method for producing a component bonded to a solder preform, comprising the following steps: (1) providing a component having at least one contact surface, and a free solder preform, (2) producing an assembly of the component and the solder preform, which is not yet bonded to said component, by bringing a contact surface, or the sole contact surface, of the component into contact with a contact surface of the free solder preform, and (3) forming the component bonded to the solder preform by hot pressing the assembly produced in step (2) at a temperature that is 10 to 40% lower than the melting temperature of the soldering metal of the solder preform, expressed in ° C., and with a combination of pressing force and pressing duration that will effect a reduction of 10% in the original thickness of the originally free solder preform.

Provided relates to a method for manufacturing an anisotropic conductive adhesive and a method for mounting a component using an anisotropic conductive adhesive, and provides a method for manufacturing an anisotropic conductive adhesive, including: a process of removing a first oxide film on solder particles by using a first reducing agent; and a process of manufacturing an anisotropic conductive adhesive by mixing the solder particles, a gapper, and an adhesive resin.

A joined structure includes: a first member; and a second member that faces the first member and that is joined to the first member via a joining layer. The joining layer includes a metal material and a solder material, apart of the metal material has at least one pore, and the solder material is located in a part of an internal area of the at least one pore. Also disclosed is a joining method that makes it possible to produce the joined structure. Further disclosed is a joining material used in the joining method. The joining method makes it possible to achieve non-pressurization sintering processes while maintaining high precise thickness of a joining layer between the first layer and the second layer based on the spacer.

Embodiments may relate to a microelectronic package comprising that includes a solder thermal interface material (STIM). The STIM may include indium and a dopant material which may provide a number of benefits to the STIM. The STIM may physically and thermally couple a die and an integrated heat spreader (IHS). Other embodiments may be described or claimed.

Embodiments may relate to a microelectronic package comprising that includes a solder thermal interface material (STIM). The STIM may include indium and a dopant material which may provide a number of benefits to the STIM. The STIM may physically and thermally couple a die and an integrated heat spreader (IHS). Other embodiments may be described or claimed.

There is provided a bonding material which forms a bonding portion between two objects, which material contains (1) first metal particles comprising a first metal and having a median particle diameter in the range of 20 nm to 1 m, and (2) second metal particles comprising, as a second metal, at least one alloy of Sn and at least one selected from Bi, In and Zn and having a melting point of not higher than 200 C.

Inefficient dissipation of heat limits the performance of electronic devices. Thermal interface materials (TIMs) can be used in electronic devices to dissipate heat more effectively and efficiently. Nanocomposites have been prepared using functionalized boron nitride nanosheets (BNNS). The incorporation of soft-ligand functionalized BNNS in a metal matrix was used to nanofabricate kinetically-trapped nanocomposites TIMs.

A semiconductor die attach composition with greater than 60% metal volume after thermal reaction having: (a) 80-99 wt % of a mixture of metal particles comprising 30-70 wt % of a lead-free low melting point (LMP) particle composition comprising at least one LMP metal Y that melts below a temperature T1, and 25-70 wt % of a high melting point (HMP) particle composition comprising at least one metallic element M that is reactive with the at least one LMP metal Y at a process temperature T1, wherein the ratio of wt % of M to wt % of Y is at least 1.0; (b) 0-30 wt % of a metal powder additive A; and (c) a fluxing vehicle having a volatile portion, and not more than 50 wt % of a non-volatile portion.

A solder material comprising a solder alloy and a thermal conductivity modifying component. The solder material has a bulk thermal conductivity of between about 75 and about 150 W/m-K and is usable in enhancing the thermal conductivity of the solder, allowing for optimal heat transfer and reliability in electronic packaging applications.

A composition exhibits excellent heat resistance and mounting reliability when bonding a semiconductor power element to a metal lead frame, which is also free of lead and thereby places little burden on the environment. An electrically conductive composition contains at least a sulfide compound represented by RSR (wherein R is an organic group containing at least carbon; R is an organic group that is the same as or different from R; and R and R may be bonded to each other to form a so-called cyclic sulfide) and metal particles containing at least Cu, Sn or Ni as its essential component. Further, a conductive paste and a conductive bonding film each are produced using the electrically conductive composition. A dicing die bonding film is obtained by bonding the conductive bonding film with an adhesive tape.