A thermally-conductive and mechanically-robust bonding method for attaching a metal nanowire (MNW) array to an adjacent surface includes the steps of: removing a template membrane from the MNW; infiltrating the MNW with a bonding material: placing the bonding material on the adjacent surface; bringing an adjacent surface into contact with a top surface of the MNW while the bonding material is bondable; and allowing the bonding material to cool and form a solid bond between the MNW and the adjacent surface. A thermally-conductive and mechanically-robust bonding method for attaching a metal nanowire (MNW) array to an adjacent surface includes the steps of: choosing a bonding material based on a desired bonding process; and without removing the MNW from a template membrane that fills an interstitial volume of the MNW, depositing the bonding material onto a tip of the MNW.

A method of manufacturing a semiconductor device which includes a first member and a second member joined to the first member includes: a) producing (Cu,Ni).sub.6Sn.sub.5 on a Ni film formed on the first member by melting a first SnCu solder containing 0.9 wt % or higher of Cu on the Ni film of the first member; b) producing (Cu,Ni).sub.6Sn.sub.5 on a Ni film formed on the second member by melting a second SnCu solder containing 0.9 wt % or higher of Cu on the Ni film of the second member; and c) joining the first member and the second member to each other by melting the first SnCu solder having undergone step a) and the second SnCu solder having undergone step b) so that the first SnCu solder and the second SnCu solder become integrated.

Laminated composite (10) comprising at least one electronic substrate (11) and an arrangement of layers (20, 30) made up of at least a first layer (20) of a first metal and/or a first metal alloy and of a second layer (30) of a second metal and/or a second metal alloy adjacent to this first layer (20), wherein the melting temperatures of the first and second layers are different, and wherein, after a thermal treatment of the arrangement of layers (20, 30), a region with at least one intermetallic phase (40) is formed between the first layer and the second layer, wherein the first layer (20) or the second layer (30) is formed by a reaction solder which consists of a mixture of a basic solder with an AgX, CuX or NiX alloy, wherein the component X of the AgX, CuX or NiX alloy is selected from the group consisting of B, Mg, Al, Si, Ca, Se, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Ge, Y, Zr, Nb, Mo, Ag, In, Sn, Sb, Ba, Hf, Ta, W, Au, Bi, La, Ce, Pr, Nd, Gd, Dy, Sm, Er, Tb, Eu, Ho, Tm, Yb and Lu and wherein the melting temperature of the AgX, CuX or NiX alloy is greater than the melting temperature of the basic solder. The invention also relates to a method for forming a laminated composite (10) and to a circuit arrangement containing a laminated composite (10) according to the invention.

A thermally-conductive and mechanically-robust bonding method for attaching a metal nanowire (MNW) array to an adjacent surface includes the steps of: removing a template membrane from the MNW; infiltrating the MNW with a bonding material; placing the bonding material on the adjacent surface; bringing an adjacent surface into contact with a top surface of the MNW while the bonding material is bondable; and allowing the bonding material to cool and form a solid bond between the MNW and the adjacent surface. A thermally-conductive and mechanically-robust bonding method for attaching a metal nanowire (MNW) array to an adjacent surface includes the steps of: choosing a bonding material based on a desired bonding process; and without removing the MNW from a template membrane that fills an interstitial volume of the MNW, depositing the bonding material onto a tip of the MNW.

A method for high temperature bonding of substrates may include providing a top substrate and a bottom substrate, and positioning an insert between the substrates to form a assembly. The insert may be shaped to hold at least an amount of Sn having a low melting temperature and a gap shaped to hold at least a plurality of metal particles having a high melting temperature greater than the low melting temperature. The assembly may be heated to below the low melting temperature and held for a first period of time. The assembly may further be heated to approximately the low melting temperature and held for a period of time at a temperature equal to or greater than the low melting temperature such that the amount of Sn and the amount of metal particles form one or more intermetallic bonds. The assembly may be cooled to create a bonded assembly.

Disclosed is a jointed body wherein multiple base members are jointed to each other through a jointing layer, and at least one of the base members is a base member of a ceramic material, semiconductor or glass. The joint material layer contains a metal and an oxide. The oxide contains V and Te, and is present between the metal and the base members. Disclosed is also a joint material in the form of a paste containing an oxide glass containing V and Te, metal particles, and a solvent; in the form of a foil piece or plate in which particles of an oxide glass containing V and Te are embedded; or in the form of a foil piece or plate containing a layer of an oxide glass containing V and Te, and a layer of a metal.

Disclosed is a jointed body wherein multiple base members are jointed to each other through a jointing layer, and at least one of the base members is a base member of a ceramic material, semiconductor or glass. The joint material layer contains a metal and an oxide. The oxide contains V and Te, and is present between the metal and the base members. Disclosed is also a joint material in the form of a paste containing an oxide glass containing V and Te, metal particles, and a solvent; in the form of a foil piece or plate in which particles of an oxide glass containing V and Te are embedded; or in the form of a foil piece or plate containing a layer of an oxide glass containing V and Te, and a layer of a metal.

A solder material having a good thermal-cycle fatigue property and wettability. The solder material contains not less than 6.0% by mass and not more than 8.0% by mass Sb, not less than 3.0% by mass and not more than 5.0% by mass Ag, and the balance of Sn and incidental impurities. Also, a semiconductor device may include a joining layer between a semiconductor element and a substrate electrode or a lead frame, the joining layer being obtained by melting this solder material.

Disclosed are exemplary methods for controlling or manipulating bond line thickness for metal amalgams including filler particles (e.g., metal amalgam thermal interface materials (TIMs), etc.) through shearing, sonication, and/or vibration of the metal amalgam under pressure to achieve lower bond line thicknesses. In an exemplary method, a metal amalgam including filler particles may be used as a thermal interface material between a heat source and another component of an electronic device, whereby the metal amalgam has a bond line thickness of less than 100 micrometers.

A solder material comprising a solder alloy and a thermal conductivity modifying component. The solder material has a bulk thermal conductivity of between about 75 and about 150 W/m-K and is usable in enhancing the thermal conductivity of the solder, allowing for optimal heat transfer and reliability in electronic packaging applications.