A metal sintering preparation containing (A) 50 to 90% by weight of at least one metal that is present in the form of particles having a coating that contains at least one organic compound, and (B) 6 to 50% by weight organic solvent. The mathematical product of tamped density and specific surface of the metal particles of component (A) is in the range of 40,000 to 80,000 cm.sup.1.

A semiconductor device is provided, including a die constituting the top layer of the semiconductor device, preferably made of silicone; a lead frame constituting the bottom layer of the semiconductor device, having high electrical conductivity in the range between 6.310.sup.7 Siemens to 110.sup.6 Siemens more preferably 110.sup.7 Siemens (electrical conductivity is normally measured in Siemens per meter S/m, range of conductivity for Cu alloy lead frames are between 5 to 610.sup.7 S/m) for example made of L/F C19210 material; a first layer formed from a metallic foam located between the lead frame and the die, with a thickness preferably in the range of 500 nm to 5000 nm more preferably 2000 nm, and with a porosity in range of 30% and 90% preferably 60% and a second layer located between the die and the lead frame being only partially in surface contact with the first layer.