Disclosed is an electromagnetic wave absorbing heat conductive sheet having superior heat conductivity and electromagnetic wave absorbency. The electromagnetic wave absorbing heat conductive sheet comprises a polymer matrix component; a magnetic metal power; and a fibrous heat conductive filler oriented in one direction.

There is disclosed a method for manufacturing a semiconductor device comprising a semiconductor chip having a connection portion and a wiring circuit board having a connection portion, the respective connection portions being electrically connected to each other, or a semiconductor device comprising a plurality of semiconductor chips having connection portions, the respective connection portions being electrically connected to each other. The connection portions consist of metal. The above described method comprises: (a) a first step of press-bonding the semiconductor chip and the wiring circuit board or the semiconductor chips to each other so that the respective connection portions are in contact with each other with a semiconductor adhesive interposed therebetween, at a temperature lower than a melting point of the metal of the connection portion, to obtain a temporarily connected body; (b) a second step of sealing at least a part of the temporarily connected body with a sealing resin to obtain a sealed temporarily connected body; and (c) a third step of heating the sealed temporarily connected body at a temperature equal to or higher than the melting point of the metal of the connection portion, to obtain a sealed connected body.

There is disclosed a method for manufacturing a semiconductor device comprising a semiconductor chip having a connection portion and a wiring circuit board having a connection portion, the respective connection portions being electrically connected to each other, or a semiconductor device comprising a plurality of semiconductor chips having connection portions, the respective connection portions being electrically connected to each other. The connection portions consist of metal. The above described method comprises: (a) a first step of press-bonding the semiconductor chip and the wiring circuit board or the semiconductor chips to each other so that the respective connection portions are in contact with each other with a semiconductor adhesive interposed therebetween, at a temperature lower than a melting point of the metal of the connection portion, to obtain a temporarily connected body; (b) a second step of sealing at least a part of the temporarily connected body with a sealing resin to obtain a sealed temporarily connected body; and (c) a third step of heating the sealed temporarily connected body at a temperature equal to or higher than the melting point of the metal of the connection portion, to obtain a sealed connected body.

Provided is a metal powder sintering paste having a high resistance to thermal stress. The present invention provides a metal powder sintering paste containing silver particles having an average particle diameter (median diameter) of 0.3 m to 5 m as a main component, further containing inorganic spacer particles having a CV value (standard deviation/average value) of less than 5%, and containing substantially no resin.

Provided is a metal powder sintering paste having a high resistance to thermal stress. The present invention provides a metal powder sintering paste containing silver particles having an average particle diameter (median diameter) of 0.3 m to 5 m as a main component, further containing inorganic spacer particles having a CV value (standard deviation/average value) of less than 5%, and containing substantially no resin.

The present invention provides a semiconductor device including an insulating layer, a conductive layer bonded to one main surface of the insulating layer, a semiconductor element arranged such that the upper surface of the semiconductor element faces a direction same as the one main surface of the insulating layer, an upper electrode provided on the upper surface of the semiconductor element, a wiring member that has one end electrically bonded to the upper electrode of the semiconductor element and has another end electrically bonded to the conductive layer, and has a hollow portion, a first sealing material, and a second sealing material, in which the first sealing material seals at least part of the semiconductor element so as to be in contact with the semiconductor element, and the second sealing material seals the wiring member so as to be in contact with the wiring member.

The present invention provides a semiconductor device including an insulating layer, a conductive layer bonded to one main surface of the insulating layer, a semiconductor element arranged such that the upper surface of the semiconductor element faces a direction same as the one main surface of the insulating layer, an upper electrode provided on the upper surface of the semiconductor element, a wiring member that has one end electrically bonded to the upper electrode of the semiconductor element and has another end electrically bonded to the conductive layer, and has a hollow portion, a first sealing material, and a second sealing material, in which the first sealing material seals at least part of the semiconductor element so as to be in contact with the semiconductor element, and the second sealing material seals the wiring member so as to be in contact with the wiring member.

In described examples, a microelectronic device includes a microelectronic die with a die attach surface. The microelectronic device further includes a nanoparticle layer coupled to the die attach surface. The nanoparticle layer may be in direct contact with the die attach surface, or may be coupled to the die attach surface through an intermediate layer, such as an adhesion layer or a contact metal layer. The nanoparticle layer includes nanoparticles having adjacent nanoparticles adhered to each other. The microelectronic die is attached to a package substrate by a die attach material. The die attach material extends into the nanoparticle layer and contacts at least a portion of the nanoparticles.

In described examples, a microelectronic device includes a microelectronic die with a die attach surface. The microelectronic device further includes a nanoparticle layer coupled to the die attach surface. The nanoparticle layer may be in direct contact with the die attach surface, or may be coupled to the die attach surface through an intermediate layer, such as an adhesion layer or a contact metal layer. The nanoparticle layer includes nanoparticles having adjacent nanoparticles adhered to each other. The microelectronic die is attached to a package substrate by a die attach material. The die attach material extends into the nanoparticle layer and contacts at least a portion of the nanoparticles.

The present invention provides a conductive material in which, even when the conductive material is left for a certain period of time, solder of conductive particles can be efficiently placed on an electrode, and, in addition, yellowing of the conductive material can be sufficiently suppressed during heating. The conductive material according to the present invention contains a plurality of conductive particles having solder at an outer surface portion of a conductive portion, a curable compound, and a boron trifluoride complex.