H01L2224/29391

Dielectric and metallic nanowire bond layers

In some examples, an electronic device comprises a first component having a surface, a second component having a surface, and a bond layer positioned between the surfaces of the first and second components to couple the first and second components to each other. The bond layer includes a set of metallic nanowires and a dielectric portion. The dielectric portion comprises a polymer matrix and dielectric nanoparticles.

Dielectric and metallic nanowire bond layers

In some examples, an electronic device comprises a first component having a surface, a second component having a surface, and a bond layer positioned between the surfaces of the first and second components to couple the first and second components to each other. The bond layer includes a set of metallic nanowires and a dielectric portion. The dielectric portion comprises a polymer matrix and dielectric nanoparticles.

UNDERFILL FILM FOR SEMICONDUCTOR PACKAGE AND METHOD FOR MANUFACTURING SEMICONDUCTOR PACKAGE USING THE SAME
20220199430 · 2022-06-23 · ·

An underfill film for semiconductor packages and a method for manufacturing a semiconductor package using the underfill film are disclosed. The underfill film includes an adhesive layer in which a melt viscosity and an onset temperature are adjusted to a predetermined range such that production efficiency may be improved by simplifying packaging process of the semiconductor packages. Also the underfill film and the manufacturing process may improve connection reliability of the package.

UNDERFILL FILM FOR SEMICONDUCTOR PACKAGE AND METHOD FOR MANUFACTURING SEMICONDUCTOR PACKAGE USING THE SAME
20220199430 · 2022-06-23 · ·

An underfill film for semiconductor packages and a method for manufacturing a semiconductor package using the underfill film are disclosed. The underfill film includes an adhesive layer in which a melt viscosity and an onset temperature are adjusted to a predetermined range such that production efficiency may be improved by simplifying packaging process of the semiconductor packages. Also the underfill film and the manufacturing process may improve connection reliability of the package.

Connection structure and method for producing same

One aspect of the invention is a method of manufacturing a connection structure, including disposing an adhesive layer between a first electronic member including a first substrate and a first electrode formed on the first substrate and a second electronic member including a second substrate and a second electrode formed on the second substrate, and pressure-bonding the first electronic member and the second electronic member via the adhesive layer such that the first electrode and the second electrode are electrically connected to each other, wherein the first electronic member further including an insulating layer formed on a side of the first electrode opposite to the first substrate, and the adhesive layer including: a first conductive particle being a dendritic conductive particle; and a second conductive particle being a conductive particle other than the first conductive particle and having a non-conductive core and a conductive layer provided on the core.

Connection structure and method for producing same

One aspect of the invention is a method of manufacturing a connection structure, including disposing an adhesive layer between a first electronic member including a first substrate and a first electrode formed on the first substrate and a second electronic member including a second substrate and a second electrode formed on the second substrate, and pressure-bonding the first electronic member and the second electronic member via the adhesive layer such that the first electrode and the second electrode are electrically connected to each other, wherein the first electronic member further including an insulating layer formed on a side of the first electrode opposite to the first substrate, and the adhesive layer including: a first conductive particle being a dendritic conductive particle; and a second conductive particle being a conductive particle other than the first conductive particle and having a non-conductive core and a conductive layer provided on the core.

Piezoelectric vibrator
11233497 · 2022-01-25 · ·

A piezoelectric vibrator that includes a piezoelectric resonator, a substrate having opposite first and second principal surfaces, and an electrically conductive holding member holding the piezoelectric resonator on the first principal surface of the substrate such that the piezoelectric resonator is able to be excited. The electrically conductive holding member contains a first filler containing an electrically conductive material as a main component and a second filler containing an electrically insulating material as a main component and having a smaller Young's modulus than the first filler. In a plan view in a direction normal to the first principal surface of the substrate, the second filler is more densely disposed in an outer peripheral region of the electrically conductive holding member than in a central region of the electrically conductive holding member.

Thermosetting resin composition, semiconductor device, and electrical/electronic component

There are provided a thermosetting resin composition for semiconductor bonding and a thermosetting resin composition for light emitting device which have high thermal conductivity and an excellent heat dissipation property and are capable of reliable pressure-free bonding of a semiconductor element and a light emitting element to a substrate. A thermosetting resin composition comprising: (A) silver fine particles ranging from 1 nm to 200 nm in thickness or in minor axis; (B) a silver powder having an average particle size of more than 0.2 μm and 30 μm or less; (C) resin particles; and (D) a thermosetting resin, wherein an amount of the resin particles (C) is 0.01 to 1 part by mass and an amount of the thermosetting resin (D) is 1 to 20 parts by mass, to 100 parts by mass being a total amount of the silver fine particles (A) and the silver powder (B).

Thermosetting resin composition, semiconductor device, and electrical/electronic component

There are provided a thermosetting resin composition for semiconductor bonding and a thermosetting resin composition for light emitting device which have high thermal conductivity and an excellent heat dissipation property and are capable of reliable pressure-free bonding of a semiconductor element and a light emitting element to a substrate. A thermosetting resin composition comprising: (A) silver fine particles ranging from 1 nm to 200 nm in thickness or in minor axis; (B) a silver powder having an average particle size of more than 0.2 μm and 30 μm or less; (C) resin particles; and (D) a thermosetting resin, wherein an amount of the resin particles (C) is 0.01 to 1 part by mass and an amount of the thermosetting resin (D) is 1 to 20 parts by mass, to 100 parts by mass being a total amount of the silver fine particles (A) and the silver powder (B).

Compressible foamed thermal interface materials and methods of making the same

Disclosed are exemplary embodiments of compressible foamed thermal interface materials. Also disclosed are methods of making and using compressible foamed thermal interface materials.