A cationically polymerizable anisotropic conductive film is provided. The cationically polymerizable anisotropic conductive film includes an alicyclic epoxy compound and achieves storage life property better than known anisotropic conductive films while ensuring curing temperature and connection reliability equivalent to known anisotropic conductive films. The anisotropic conductive film contains a binder composition containing a film forming component and a cationically polymerizable component, a cationic polymerization initiator, and conductive particles. The anisotropic conductive film contains a quaternary ammonium salt-based thermal acid generator as a cationic polymerization initiator and an alicyclic epoxy compound and a low polarity oxetane compound as a cationically polymerizable component.

The present invention pertains to a curable organopolysiloxane composition comprising at least (A) an organopolysiloxane having at least two alkenyl groups per module, (B) an organopolysiloxane resin represented by average unit formula: (R.sup.1.sub.3SiO.sub.1/2).sub.a(R.sup.1.sub.2SiO.sub.2/2).sub.b(R.sup.2SiO.sub.3/2).sub.c(SiO.sub.4/2).sub.d. In the formula, R.sup.1's are the same or different from each other, and represent a hydrogen atom or a monovalent hydrocarbon group not having an aliphatic unsaturated carbon bond but at least two of the R.sup.1's per molecule represent hydrogen atoms, R.sup.2 represents a monovalent hydrocarbon group not having an aliphatic unsaturated bond, and a, b, and c are numbers satisfying 0<a<1, 0<b<1, and 0c0.2, and 0<d<1, respectively, but are also numbers satisfying 0.6a/d 1.5, 1.5b/d3, and a+b+c+d=1, and (C) a catalyst for hydrosilylation reaction. This composition has excellent adhesiveness to a semiconductor element, and can form a cured product in which only a small number of bubbles are produced.

The present invention pertains to a curable organopolysiloxane composition comprising at least (A) an organopolysiloxane having at least two alkenyl groups per module, (B) an organopolysiloxane resin represented by average unit formula: (R.sup.1.sub.3SiO.sub.1/2).sub.a(R.sup.1.sub.2SiO.sub.2/2).sub.b(R.sup.2SiO.sub.3/2).sub.c(SiO.sub.4/2).sub.d. In the formula, R.sup.1's are the same or different from each other, and represent a hydrogen atom or a monovalent hydrocarbon group not having an aliphatic unsaturated carbon bond but at least two of the R.sup.1's per molecule represent hydrogen atoms, R.sup.2 represents a monovalent hydrocarbon group not having an aliphatic unsaturated bond, and a, b, and c are numbers satisfying 0<a<1, 0<b<1, and 0c0.2, and 0<d<1, respectively, but are also numbers satisfying 0.6a/d 1.5, 1.5b/d3, and a+b+c+d=1, and (C) a catalyst for hydrosilylation reaction. This composition has excellent adhesiveness to a semiconductor element, and can form a cured product in which only a small number of bubbles are produced.

A device includes: a chip; a support member; an adhesive layer disposed on the support member; and a wire electrically connected to the sensor chip on a side face of the sensor chip. Herein the adhesive layer includes a material exhibiting a dilatancy property in which a shear stress increases in a multi-dimensional function as a shear rate increases.

A device includes: a chip; a support member; an adhesive layer disposed on the support member; and a wire electrically connected to the sensor chip on a side face of the sensor chip. Herein the adhesive layer includes a material exhibiting a dilatancy property in which a shear stress increases in a multi-dimensional function as a shear rate increases.

One aspect of the invention is a method of manufacturing a connection structure, including disposing an adhesive layer between a first electronic member including a first substrate and a first electrode formed on the first substrate and a second electronic member including a second substrate and a second electrode formed on the second substrate, and pressure-bonding the first electronic member and the second electronic member via the adhesive layer such that the first electrode and the second electrode are electrically connected to each other, wherein the first electronic member further including an insulating layer formed on a side of the first electrode opposite to the first substrate, and the adhesive layer including: a first conductive particle being a dendritic conductive particle; and a second conductive particle being a conductive particle other than the first conductive particle and having a non-conductive core and a conductive layer provided on the core.

One aspect of the invention is a method of manufacturing a connection structure, including disposing an adhesive layer between a first electronic member including a first substrate and a first electrode formed on the first substrate and a second electronic member including a second substrate and a second electrode formed on the second substrate, and pressure-bonding the first electronic member and the second electronic member via the adhesive layer such that the first electrode and the second electrode are electrically connected to each other, wherein the first electronic member further including an insulating layer formed on a side of the first electrode opposite to the first substrate, and the adhesive layer including: a first conductive particle being a dendritic conductive particle; and a second conductive particle being a conductive particle other than the first conductive particle and having a non-conductive core and a conductive layer provided on the core.

In some examples, an electronic device comprises a first component having a surface, a second component having a surface, and a bond layer positioned between the surfaces of the first and second components to couple the first and second components to each other. The bond layer includes a set of metallic nanowires and a dielectric portion. The dielectric portion comprises a polymer matrix and dielectric nanoparticles.

In some examples, an electronic device comprises a first component having a surface, a second component having a surface, and a bond layer positioned between the surfaces of the first and second components to couple the first and second components to each other. The bond layer includes a set of metallic nanowires and a dielectric portion. The dielectric portion comprises a polymer matrix and dielectric nanoparticles.

A thermal interface material may be formed comprising a polymer material and a self-healing constituent. The thermal interface material may be used in an integrated circuit assembly between at least one integrated and a heat dissipation device, wherein the self-healing constituent changes the physical properties of the thermal interface material in response to thermo-mechanical stresses to prevent failure modes from occurring during the operation of the integrated circuit assembly.