An electronic component module formed with the use of a copper particle paste which can ensure that even the inner part of a joint material is sintered, where copper particles are excellent in oxidation resistance, and a joint part is provided with high joint reliability; and a method for manufacturing the module.

An electronic component module formed with the use of a copper particle paste which can ensure that even the inner part of a joint material is sintered, where copper particles are excellent in oxidation resistance, and a joint part is provided with high joint reliability; and a method for manufacturing the module.

Provided are anisotropic conductive materials, electronic devices including anisotropic conductive materials, and/or methods of manufacturing the electronic devices. An anisotropic conductive material may include a plurality of particles in a matrix material layer. At least some of the particles may include a core portion and a shell portion covering the core portion. The core portion may include a conductive material that is in a liquid state at a temperature greater than 15 C. and less than or equal to about 110 C. or less. For example, the core portion may include at least one of a liquid metal, a low melting point solder, and a nanofiller. The shell portion may include an insulating material. A bonding portion formed by using the anisotropic conductive material may include the core portion outflowed from the particle and may further include an intermetallic compound.

Provided are anisotropic conductive materials, electronic devices including anisotropic conductive materials, and/or methods of manufacturing the electronic devices. An anisotropic conductive material may include a plurality of particles in a matrix material layer. At least some of the particles may include a core portion and a shell portion covering the core portion. The core portion may include a conductive material that is in a liquid state at a temperature greater than 15 C. and less than or equal to about 110 C. or less. For example, the core portion may include at least one of a liquid metal, a low melting point solder, and a nanofiller. The shell portion may include an insulating material. A bonding portion formed by using the anisotropic conductive material may include the core portion outflowed from the particle and may further include an intermetallic compound.

A semiconductor package according to an embodiment includes a first semiconductor die, a plurality of bonding pads on the first semiconductor die, a plurality of connection members on the plurality of bonding pads, wherein each connection member of the plurality of connection members is disposed on a corresponding bonding pad of the plurality of bonding pads, a second semiconductor die on the plurality of connection members, and an anisotropic conductive film between the first semiconductor die and the second semiconductor die, and between the plurality of bonding pads and the plurality of connection members, including an insulating film, and conductive particles inside the insulating film, wherein the conductive particles are positioned between each of the plurality of connection members and the corresponding bonding pad of the plurality of bonding pads.