Patent classifications
H
ELECTRICITY
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H01
ELECTRIC ELEMENTS
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H01L
SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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2224/00
Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
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H01L2224/01
Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
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H01L2224/26
Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
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H01L2224/28
Structure, shape, material or disposition of the layer connectors prior to the connecting process
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H01L2224/29
of an individual layer connector
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H01L2224/29698
with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
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H01L2224/297
with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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H01L2224/29738
the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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H01L2224/29739
Silver [Ag] as principal constituent
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H01L2224/29739

Thermal Bonding Sheet and Thermal Bonding Sheet with Dicing Tape
20180315729 · 2018-11-01 ·

Provided is a thermal bonding sheet capable of preventing bonding irregularity by uniform thickness, and imparting the bonding reliability at high temperatures, and a thermal bonding sheet with dicing tape having the thermal bonding sheet. A thermal bonding sheet includes a precursor layer that is to become a sintered layer by heating, and the precursor layer has an average thickness of 5 m to 200 m, and a maximum thickness and a minimum thickness falling within a range of 20% of the average thickness. A thermal bonding sheet includes a precursor layer that is to become a sintered layer by heating, and the precursor layer has an average thickness of 5 m to 200 m, and a surface roughness Sa measured in a field of view of 200 m200 m by a confocal microscope of 2 m or less.