A thermal interface material (TIM), an integrated circuit assembly, and a method for thermally connecting layers are provided. The TIM comprises a polymer component and liquid metal droplets dispersed throughout the polymer component. The polymer component comprises a first polymer and at least one of a second polymer, a third polymer, and a fourth polymer. The first polymer comprises a vinyl terminated polydimethylsiloxane having a molecular weight (MW)<30,000 g/mol. The second polymer comprises a vinyl terminated polydimethylsiloxane having a MW<30,000 g/mol. The third polymer comprises an alkyl terminated poly dimethylsiloxane having a MW30,000 g/mol. The fourth polymer comprises polybutadiene. The TIM has a strain limit of at least 100% and the TIM has a lap shear strength of at least 1 MPa.

A wiring substrate includes a connection pad formed in the outermost wiring layer, a dummy pad formed in the outermost wiring layer, and a dummy wiring portion formed in the outermost wiring layer, the dummy wiring portion connecting the connection pad and the dummy pad. The maximum width of each of the connection pad and the dummy pad is set to be larger than the width of the dummy wiring portion. A bump of an electronic component is flip-chip connected to a connection pad through a resin-containing solder.

A wiring substrate includes a connection pad formed in the outermost wiring layer, a dummy pad formed in the outermost wiring layer, and a dummy wiring portion formed in the outermost wiring layer, the dummy wiring portion connecting the connection pad and the dummy pad. The maximum width of each of the connection pad and the dummy pad is set to be larger than the width of the dummy wiring portion. A bump of an electronic component is flip-chip connected to a connection pad through a resin-containing solder.

Provided are anisotropic conductive materials, electronic devices including anisotropic conductive materials, and/or methods of manufacturing the electronic devices. An anisotropic conductive material may include a plurality of particles in a matrix material layer. At least some of the particles may include a core portion and a shell portion covering the core portion. The core portion may include a conductive material that is in a liquid state at a temperature greater than 15 C. and less than or equal to about 110 C. or less. For example, the core portion may include at least one of a liquid metal, a low melting point solder, and a nanofiller. The shell portion may include an insulating material. A bonding portion formed by using the anisotropic conductive material may include the core portion outflowed from the particle and may further include an intermetallic compound.

Provided are anisotropic conductive materials, electronic devices including anisotropic conductive materials, and/or methods of manufacturing the electronic devices. An anisotropic conductive material may include a plurality of particles in a matrix material layer. At least some of the particles may include a core portion and a shell portion covering the core portion. The core portion may include a conductive material that is in a liquid state at a temperature greater than 15 C. and less than or equal to about 110 C. or less. For example, the core portion may include at least one of a liquid metal, a low melting point solder, and a nanofiller. The shell portion may include an insulating material. A bonding portion formed by using the anisotropic conductive material may include the core portion outflowed from the particle and may further include an intermetallic compound.

A method includes forming a solder layer on a surface of one or more chips. A lid is positioned over the solder layer on each of the one or more chips. Heat and pressure are applied to melt the solder layer and attach each lid to a corresponding solder layer. The solder layer has a thermal conductivity of 50 W/mK.

A method includes forming a solder layer on a surface of one or more chips. A lid is positioned over the solder layer on each of the one or more chips. Heat and pressure are applied to melt the solder layer and attach each lid to a corresponding solder layer. The solder layer has a thermal conductivity of 50 W/mK.

Sintering die-attach materials provide a lead-free solution for semiconductor packages with superior electrical, thermal and mechanical performance to prior art alternatives. Wafer-applied sintering materials form a metallurgical bond to both semiconductor die and adherends as well as throughout the die-attach joint and do not remelt at the original process temperature. Application to either one or both sides of the wafer, as well as paste a film application are disclosed.

Sintering die-attach materials provide a lead-free solution for semiconductor packages with superior electrical, thermal and mechanical performance to prior art alternatives. Wafer-applied sintering materials form a metallurgical bond to both semiconductor die and adherends as well as throughout the die-attach joint and do not remelt at the original process temperature. Application to either one or both sides of the wafer, as well as paste a film application are disclosed.

Solid metal foam thermal interface materials and their uses in electronics assembly are described. In one implementation, a method includes: applying a thermal interface material (TIM) between a first device and a second device to form an assembly having a first surface of the TIM in in touching relation with a surface of the first device, and a second surface of the TIM opposite the first surface in touching relation with a surface of the second device, the TIM comprising a solid metal foam and a first liquid metal; and compressing the assembly to form an alloy from the TIM that bonds the first device to the second device.