The present invention relates to a conductive composition containing a conductive metal powder and a resin component, in which the conductive metal powder contains at least a metal flake having a crystalline structure in which a metal crystal grows in a flake shape, and the resin component contains an aromatic amine skeleton.

The present invention relates to a conductive composition containing a conductive metal powder and a resin component, in which the conductive metal powder contains at least a metal flake having a crystalline structure in which a metal crystal grows in a flake shape, and the resin component contains an aromatic amine skeleton.

A semiconductor package includes a substrate, an integrated circuit disposed on the substrate, a memory support disposed on the integrated circuit, stacked memory disposed on the memory support and in communication with the integrated circuit, and a lid connected to the substrate. The integrated circuit has a low power region and a high power region. The memory support is disposed on the low power region of the integrated circuit and is configured to allow a flow of fluid therethrough to conduct heat away from the low power region of the integrated circuit. The lid defines a first port, a second port, and a lid volume fluidly connecting the first port and the second port. The lid volume is configured to house the integrated circuit, the memory support, and the stacked memory, while directing the flow of fluid to flow over the integrated circuit, the memory support, and the stacked memory.

Disclosed is a die-bonding method which provides a target substrate having a circuit structure with multiple electrical contacts and multiple semiconductor elements each semiconductor element having a pair of electrodes, arranges the multiple semiconductor elements on the target substrate with the pair of electrodes of each semiconductor element aligned with two corresponding electrical contacts of the target substrate, and applies at least one energy beam to join and electrically connect the at least one pair of electrodes of every at least one of the multiple semiconductor elements and the corresponding electrical contacts aligned therewith in a heating cycle by heat carried by the at least one energy beam in the heating cycle. The die-bonding method delivers scattering heated dots over the target substrate to avoid warpage of PCB and ensures high bonding strength between the semiconductor elements and the circuit structure of the target substrate.

Disclosed is a die-bonding method which provides a target substrate having a circuit structure with multiple electrical contacts and multiple semiconductor elements each semiconductor element having a pair of electrodes, arranges the multiple semiconductor elements on the target substrate with the pair of electrodes of each semiconductor element aligned with two corresponding electrical contacts of the target substrate, and applies at least one energy beam to join and electrically connect the at least one pair of electrodes of every at least one of the multiple semiconductor elements and the corresponding electrical contacts aligned therewith in a heating cycle by heat carried by the at least one energy beam in the heating cycle. The die-bonding method delivers scattering heated dots over the target substrate to avoid warpage of PCB and ensures high bonding strength between the semiconductor elements and the circuit structure of the target substrate.

In a method of manufacturing a semiconductor device of one embodiment, support members and a film which is formed of a paste containing metal particles and surrounds the support members are provided above a surface of a base. Then a semiconductor element is provided above the support members and the film. Subsequently, the film is sintered to join the base and the semiconductor element. The support members are formed of a metal which melts at a temperature equal to or below a sintering temperature of the metal particles contained in the paste. The support members support the semiconductor element after the semiconductor element is provided above the support members and the film.

The present invention is directed to a liquid and solid phase power connect for packaging of an electrical device using a using a phase changing metal. The phase changing metal transitions back and forth between a liquid phase and a solid phase while constantly maintaining connection to the electrical device. The packaging uses a substrate, a restraining housing, and a lid to encase an electrical contact on the electrical device and restrain the phase changing metal. In one embodiment, the entire electrical device is encased and a voltage isolator is utilized to limit the contact areas between the phase changing metal and the electrical device. A method for relieving contact stress by transitioning the phase changing metal from a solid to a liquid is also taught.

The present invention is directed to a liquid and solid phase power connect for packaging of an electrical device using a using a phase changing metal. The phase changing metal transitions back and forth between a liquid phase and a solid phase while constantly maintaining connection to the electrical device. The packaging uses a substrate, a restraining housing, and a lid to encase an electrical contact on the electrical device and restrain the phase changing metal. In one embodiment, the entire electrical device is encased and a voltage isolator is utilized to limit the contact areas between the phase changing metal and the electrical device. A method for relieving contact stress by transitioning the phase changing metal from a solid to a liquid is also taught.

The invention relates to a paste, preferably for joining components of power electronics modules, the paste comprising a solder powder, a metal powder and a binder, wherein the binder binds solder powder and metal powder before a first heating. According to the invention, the binder is free of flux or is a flux having only low activation. In this way, a joining layer which exhibits only few included voids and good mechanical and electrical stability can be provided between a first and a second component.

The invention relates to a paste, preferably for joining components of power electronics modules, the paste comprising a solder powder, a metal powder and a binder, wherein the binder binds solder powder and metal powder before a first heating. According to the invention, the binder is free of flux or is a flux having only low activation. In this way, a joining layer which exhibits only few included voids and good mechanical and electrical stability can be provided between a first and a second component.