A structure including a wiring substrate, an interposer disposed on and electrically connected to the wiring substrate, a semiconductor die disposed on and electrically connected to the interposer, a first insulating encapsulation disposed on the interposer, a second insulating encapsulation disposed on the wiring substrate, and a lid is provided. The semiconductor die is laterally encapsulated by the first insulating encapsulation. The semiconductor die and the first insulating encapsulation are laterally encapsulated by the second insulating encapsulation. A top surface of the first insulating encapsulation is substantially leveled with a top surface of the second insulating encapsulation and a surface of the semiconductor die. The lid is disposed on the semiconductor die, the first insulating encapsulation and the second insulating encapsulation.

Provided is a composition for conductive adhesive. The composition for conductive adhesive includes a heterocyclic compound containing oxygen and including at least one of an epoxy group or oxetane group, a reductive curing agent including an amine group and a carboxyl group, and a photoinitiator, wherein a mixture ratio of the heterocyclic compound and the reductive curing agent satisfies Conditional Expression 1 below.

0.5≤(b+c)/a≤1.5, a>0, b≥0, c>0  [Conditional Expression 1] where ‘a’ denotes a mole number of a heterocycle in the heterocyclic compound, ‘b’ denotes a mole number of hydrogen bonded to a nitrogen atom of the amine group included in the reductive curing agent, and ‘c’ denotes a mole number of the carboxyl group.

Provided is a composition for conductive adhesive. The composition for conductive adhesive includes a heterocyclic compound containing oxygen and including at least one of an epoxy group or oxetane group, a reductive curing agent including an amine group and a carboxyl group, and a photoinitiator, wherein a mixture ratio of the heterocyclic compound and the reductive curing agent satisfies Conditional Expression 1 below.

0.5≤(b+c)/a≤1.5, a>0, b≥0, c>0  [Conditional Expression 1] where ‘a’ denotes a mole number of a heterocycle in the heterocyclic compound, ‘b’ denotes a mole number of hydrogen bonded to a nitrogen atom of the amine group included in the reductive curing agent, and ‘c’ denotes a mole number of the carboxyl group.

The present invention discloses flip-chip bonding method using an anisotropic adhesive polymer. The method includes applying an adhesive polymer solution containing metal particles dispersed therein onto a circuit substrate to form an adhesive polymer layer such that the adhesive polymer layer covers the metal particles; drying the adhesive polymer layer; and positioning an electronic element to be electrically connected to the circuit substrate on the dried adhesive polymer layer and causing dewetting of the polymer from the metal particles.

The present invention discloses flip-chip bonding method using an anisotropic adhesive polymer. The method includes applying an adhesive polymer solution containing metal particles dispersed therein onto a circuit substrate to form an adhesive polymer layer such that the adhesive polymer layer covers the metal particles; drying the adhesive polymer layer; and positioning an electronic element to be electrically connected to the circuit substrate on the dried adhesive polymer layer and causing dewetting of the polymer from the metal particles.

Provided are a package structure and a method of forming the same. The package structure includes a first die, a second die, an interposer, an underfill layer, a thermal interface material (TIM), and an adhesive pattern. The first die and the second die are disposed side by side on the interposer. The underfill layer is disposed between the first die and the second die. The TIM is disposed on the first die, the second die, and the underfill layer. The adhesive pattern is disposed between the underfill layer and the TIM to separate the underfill layer from the TIM.

Provided are a package structure and a method of forming the same. The package structure includes a first die, a second die, an interposer, an underfill layer, a thermal interface material (TIM), and an adhesive pattern. The first die and the second die are disposed side by side on the interposer. The underfill layer is disposed between the first die and the second die. The TIM is disposed on the first die, the second die, and the underfill layer. The adhesive pattern is disposed between the underfill layer and the TIM to separate the underfill layer from the TIM.

Provided are a package structure and a method of forming the same. The package structure includes a first die, a second die, an interposer, an underfill layer, a thermal interface material (TIM), and an adhesive pattern. The first die and the second die are disposed side by side on the interposer. The underfill layer is disposed between the first die and the second die. The TIM is disposed on the first die, the second die, and the underfill layer. The adhesive pattern is disposed between the underfill layer and the TIM to separate the underfill layer from the TIM.

Provided are a package structure and a method of forming the same. The package structure includes a first die, a second die, an interposer, an underfill layer, a thermal interface material (TIM), and an adhesive pattern. The first die and the second die are disposed side by side on the interposer. The underfill layer is disposed between the first die and the second die. The TIM is disposed on the first die, the second die, and the underfill layer. The adhesive pattern is disposed between the underfill layer and the TIM to separate the underfill layer from the TIM.

A semiconductor device according to the embodiment may include a light emitting structure including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer; a first bonding pad disposed on the light emitting structure and electrically connected to the first conductivity type semiconductor layer; a second bonding pad disposed on the light emitting structure and spaced apart from the first bonding pad, and electrically connected to the second conductivity type semiconductor layer; and a reflective layer disposed on the light emitting structure and disposed between the first bonding pad and the second bonding pad. According to the semiconductor device of the embodiment, each of the first bonding pad and the second bonding pad includes a porous metal layer having a plurality of pores and a bonding alloy layer disposed on the porous metal layer.