Encapsulated stress mitigation layers and assemblies having the same are disclosed. An assembly that includes a first substrate, a second substrate, an encapsulating layer disposed between the first and second substrates, and a stress mitigation layer disposed in the encapsulating layer such that the stress mitigation layer is encapsulated within the encapsulating layer. The stress mitigation layer has a lower melting temperature relative to a higher melting temperature of the encapsulating layer. The assembly includes an intermetallic compound layer disposed between the first substrate and the encapsulating layer such that the encapsulating layer is separated from the first substrate by the intermetallic compound layer. The stress mitigation layer melts into a liquid when the assembly operates at a temperature above the low melting temperature of the stress mitigation layer and the encapsulating layer maintains the liquid of the stress mitigation layer within the assembly.

Encapsulated stress mitigation layers and assemblies having the same are disclosed. An assembly that includes a first substrate, a second substrate, an encapsulating layer disposed between the first and second substrates, and a stress mitigation layer disposed in the encapsulating layer such that the stress mitigation layer is encapsulated within the encapsulating layer. The stress mitigation layer has a lower melting temperature relative to a higher melting temperature of the encapsulating layer. The assembly includes an intermetallic compound layer disposed between the first substrate and the encapsulating layer such that the encapsulating layer is separated from the first substrate by the intermetallic compound layer. The stress mitigation layer melts into a liquid when the assembly operates at a temperature above the low melting temperature of the stress mitigation layer and the encapsulating layer maintains the liquid of the stress mitigation layer within the assembly.

Provided relates to a method for manufacturing an anisotropic conductive adhesive and a method for mounting a component using an anisotropic conductive adhesive, and provides a method for manufacturing an anisotropic conductive adhesive, including: a process of removing a first oxide film on solder particles by using a first reducing agent; and a process of manufacturing an anisotropic conductive adhesive by mixing the solder particles, a gapper, and an adhesive resin.

Provided relates to a method for manufacturing an anisotropic conductive adhesive and a method for mounting a component using an anisotropic conductive adhesive, and provides a method for manufacturing an anisotropic conductive adhesive, including: a process of removing a first oxide film on solder particles by using a first reducing agent; and a process of manufacturing an anisotropic conductive adhesive by mixing the solder particles, a gapper, and an adhesive resin.

Embodiments may relate to a microelectronic package comprising that includes a solder thermal interface material (STIM). The STIM may include indium and a dopant material which may provide a number of benefits to the STIM. The STIM may physically and thermally couple a die and an integrated heat spreader (IHS). Other embodiments may be described or claimed.

Embodiments may relate to a microelectronic package comprising that includes a solder thermal interface material (STIM). The STIM may include indium and a dopant material which may provide a number of benefits to the STIM. The STIM may physically and thermally couple a die and an integrated heat spreader (IHS). Other embodiments may be described or claimed.

An assembly that includes a first substrate, a second substrate, and a stress mitigation layer disposed between the first and the second substrates. The stress mitigation layer is directly bonded onto the second substrate, and the second substrate is separated from the intermetallic compound layer by the stress mitigation layer. The stress mitigation layer has a high purity of at least 99% aluminum such that the stress mitigation layer reduces thermomechanical stresses on the first and second substrates. The assembly further includes an intermetallic compound layer disposed between the first substrate and the stress mitigation layer such that the stress mitigation layer is separated from the first substrate by the intermetallic compound layer.

An assembly that includes a first substrate, a second substrate, and a stress mitigation layer disposed between the first and the second substrates. The stress mitigation layer is directly bonded onto the second substrate, and the second substrate is separated from the intermetallic compound layer by the stress mitigation layer. The stress mitigation layer has a high purity of at least 99% aluminum such that the stress mitigation layer reduces thermomechanical stresses on the first and second substrates. The assembly further includes an intermetallic compound layer disposed between the first substrate and the stress mitigation layer such that the stress mitigation layer is separated from the first substrate by the intermetallic compound layer.

The present disclosure relates to an adhesive resin composition for bonding semiconductors, including: a thermoplastic resin; a thermosetting resin; a curing agent; and a compound having a specific structure, and an adhesive film for semiconductors including the same.

The present disclosure relates to an adhesive resin composition for bonding semiconductors, including: a thermoplastic resin; a thermosetting resin; a curing agent; and a compound having a specific structure, and an adhesive film for semiconductors including the same.