An anisotropic conductive film in which conductive particles are disposed in an insulating resin layer has a particle disposition of the conductive particles such that a first orthorhombic lattice region being formed by arranging a plurality of arrangement axes of the conductive particles, disposed in an a direction at a predetermined pitch, in a b direction inclined with respect to the a direction at an angle, and a second orthorhombic lattice region being formed by arranging a plurality of arrangement axes of the conductive particles, disposed in the a direction at a predetermined pitch, in a c direction obtained by inverting the b direction with respect to the a direction are repeatedly disposed.

This semiconductor device includes: a plate-shaped heat dissipation plate; a plurality of switching elements joined to one surface of the heat dissipation plate; a first terminal located apart from the heat dissipation plate, extending in a direction away from the heat dissipation plate, and connected via first conductors to surfaces of the switching elements on a side opposite to the heat dissipation plate side; and a sealing member sealing the switching elements, the heat dissipation plate, and the first terminal. A cutout is provided at an outer periphery of the heat dissipation plate. A part of the first terminal on the heat dissipation plate side overlaps a cut-out area at the cutout as seen in a direction perpendicular to the one surface of the heat dissipation plate. A retracted portion retracted inward is formed at an outer periphery of another surface of the heat dissipation plate.

This semiconductor device includes: a plate-shaped heat dissipation plate; a plurality of switching elements joined to one surface of the heat dissipation plate; a first terminal located apart from the heat dissipation plate, extending in a direction away from the heat dissipation plate, and connected via first conductors to surfaces of the switching elements on a side opposite to the heat dissipation plate side; and a sealing member sealing the switching elements, the heat dissipation plate, and the first terminal. A cutout is provided at an outer periphery of the heat dissipation plate. A part of the first terminal on the heat dissipation plate side overlaps a cut-out area at the cutout as seen in a direction perpendicular to the one surface of the heat dissipation plate. A retracted portion retracted inward is formed at an outer periphery of another surface of the heat dissipation plate.

A method includes attaching a first anisotropic conductive film including first conductive particles to a front surface of a substrate structure; compressing a first redistribution structure on the front surface of the substrate structure such that a first redistribution conductor of the first redistribution structure that is exposed is electrically connected by the first conductive particles to a connection terminal or a vertical connection conductor that is exposed from the substrate structure, attaching a second anisotropic conductive film including second conductive particles to a rear surface of the substrate structure; and compressing a second redistribution structure on the rear surface of the substrate structure such that a second redistribution conductor of the second redistribution structure that is exposed is electrically connected by the second conductive particles to the vertical connection conductor.

In a general aspect, an apparatus can include an inner package including a first silicon carbide die having a die gate conductor coupled to a common gate conductor, and a second silicon carbide die having a die gate conductor coupled to the common gate conductor. The apparatus can include an outer package including a substrate coupled to the common gate conductor, and a clip coupled to the inner package and coupled to the substrate.

In a general aspect, an apparatus can include an inner package including a first silicon carbide die having a die gate conductor coupled to a common gate conductor, and a second silicon carbide die having a die gate conductor coupled to the common gate conductor. The apparatus can include an outer package including a substrate coupled to the common gate conductor, and a clip coupled to the inner package and coupled to the substrate.

A low temperature rapid curing type low elastic conductive adhesive is provided which is useful as a conductive adhesive for component mounting in a field of FHE. The conductive resin composition contains (A) at least two types of urethane acrylate oligomers, (B) a radical polymerizable monomer, (C) a free radical generation curing agent, and (D) conductive particle. In the conductive resin composition, the component (A) preferably contains a high molecular weight urethane acrylate oligomer having a weight average molecular weight of 10,000 or more (A1), and a low molecular weight urethane acrylate oligomer having a weight average molecular weight of 9,999 or less (A2).

A low temperature rapid curing type low elastic conductive adhesive is provided which is useful as a conductive adhesive for component mounting in a field of FHE. The conductive resin composition contains (A) at least two types of urethane acrylate oligomers, (B) a radical polymerizable monomer, (C) a free radical generation curing agent, and (D) conductive particle. In the conductive resin composition, the component (A) preferably contains a high molecular weight urethane acrylate oligomer having a weight average molecular weight of 10,000 or more (A1), and a low molecular weight urethane acrylate oligomer having a weight average molecular weight of 9,999 or less (A2).

A semiconductor device includes a semiconductor element having a surface electrode layer; a first wire that is electrically connected to the first main surface of the surface electrode layer at a plurality of first connecting portions and is arranged in a first direction on the first main surface; and a second wire that is electrically connected to the first main surface of the surface electrode layer at a second connecting portion and is arranged in a second direction on the first main surface, wherein a second circle equivalent diameter, which is a diameter of a circle having a same cross-sectional area as the second wire, is larger than a first circle equivalent diameter, which is a diameter of a circle having a same cross-sectional area as the first wire.

A semiconductor device includes a semiconductor element having a surface electrode layer; a first wire that is electrically connected to the first main surface of the surface electrode layer at a plurality of first connecting portions and is arranged in a first direction on the first main surface; and a second wire that is electrically connected to the first main surface of the surface electrode layer at a second connecting portion and is arranged in a second direction on the first main surface, wherein a second circle equivalent diameter, which is a diameter of a circle having a same cross-sectional area as the second wire, is larger than a first circle equivalent diameter, which is a diameter of a circle having a same cross-sectional area as the first wire.