H01L2224/2937

ELECTROMAGNETIC WAVE ABSORBING HEAT CONDUCTIVE SHEET, METHOD FOR PRODUCING ELECTROMAGNETIC WAVE ABSORBING HEAT CONDUCTIVE SHEET, AND SEMICONDUCTOR DEVICE

Disclosed is an electromagnetic wave absorbing heat conductive sheet having superior heat conductivity and electromagnetic wave absorbency. The electromagnetic wave absorbing heat conductive sheet comprises a polymer matrix component; a magnetic metal power; and a fibrous heat conductive filler oriented in one direction.

ANISOTROPIC CONDUCTIVE BONDING MEMBER, SEMICONDUCTOR DEVICE, SEMICONDUCTOR PACKAGE AND SEMICONDUCTOR DEVICE PRODUCTION METHOD
20180350769 · 2018-12-06 · ·

An object of the present invention is to provide an anisotropic conductive bonding member capable of achieving excellent conduction reliability and insulation reliability, a semiconductor device using the same, a semiconductor package, and a semiconductor device production method. An anisotropic conductive bonding member of the present invention includes an insulating base which is made of an inorganic material, a plurality of conductive paths which are made of a conductive member, penetrate the insulating base in a thickness direction thereof, and are provided in a mutually insulated state, and a pressure sensitive adhesive layer which is provided on a surface of the insulating base, in which each of the conductive paths has a protrusion protruding from the surface of the insulating base, the protrusion of each of the conductive paths is buried in the pressure sensitive adhesive layer, and the pressure sensitive adhesive layer contains a polymer material and an antioxidant material.

SEMICONDUCTOR DEVICE

The present invention relates to a semiconductor device including: a first semiconductor element formed on an adherend; and an adhesive film for embedding the first semiconductor element, wherein the adhesive film satisfies a predetermined ratio between a melt viscosity and a weight loss ratio at a high temperature.

SEMICONDUCTOR DEVICE

The present invention relates to a semiconductor device including: a first semiconductor element formed on an adherend; and an adhesive film for embedding the first semiconductor element, wherein the adhesive film satisfies a predetermined ratio between a melt viscosity and a weight loss ratio at a high temperature.

Three-dimensional integrated circuit laminate, and interlayer filler for three-dimensional integrated circuit laminate

To provide a three-dimensional integrated circuit laminate filled in with an interlayer filler composition having both high thermal conductivity and low linear expansion property. A three-dimensional integrated circuit laminate, which comprises a semiconductor substrate laminate having at least two semiconductor substrates each having a semiconductor device layer formed thereon laminated, and has a first interlayer filler layer containing a resin (A) and an organic filler (B) and having a thermal conductivity of at least 0.8 W/(m.Math.K) between the semiconductor substrate.

THREE-DIMENSIONAL INTEGRATED CIRCUIT LAMINATE, AND INTERLAYER FILLER FOR THREE-DIMENSIONAL INTEGRATED CIRCUIT LAMINATE

To provide a three-dimensional integrated circuit laminate filled in with an interlayer filler composition having both high thermal conductivity and low linear expansion property.

A three-dimensional integrated circuit laminate, which comprises a semiconductor substrate laminate having at least two semiconductor substrates each having a semiconductor device layer formed thereon laminated, and has a first interlayer filler layer containing a resin (A) and an organic filler (B) and having a thermal conductivity of at least 0.8 W/(m.Math.K) between the semiconductor substrate.

MICRO LED ARRAY ELECTRONIC DEVICE AND ITS TRANSFER METHOD

The micro LED array electronic device suggested in one example of the present invention is a micro LED array comprising a plurality of light emitting devices arranged in columns and rows, which comprises two electrodes formed extending in one direction on a substrate; and cured polymers that fill the gap between the electrodes and vertically spaced electronic devices and comprises ferromagnetic particles, wherein the gap between the plurality of electronic devices is 5 m or more and 100 m or less.