A semiconductor device includes a first chip coupled to an electrical insulator, and a sintered heat conducting layer disposed between the electrical insulator and the first chip.

A semiconductor device includes a first chip coupled to an electrical insulator, and a sintered heat conducting layer disposed between the electrical insulator and the first chip.

Sintering die-attach materials provide a lead-free solution for semiconductor packages with superior electrical, thermal and mechanical performance to prior art alternatives. Wafer-applied sintering materials form a metallurgical bond to both semiconductor die and adherends as well as throughout the die-attach joint and do not remelt at the original process temperature. Application to either one or both sides of the wafer, as well as paste a film application are disclosed.

Sintering die-attach materials provide a lead-free solution for semiconductor packages with superior electrical, thermal and mechanical performance to prior art alternatives. Wafer-applied sintering materials form a metallurgical bond to both semiconductor die and adherends as well as throughout the die-attach joint and do not remelt at the original process temperature. Application to either one or both sides of the wafer, as well as paste a film application are disclosed.

An underfill material having sufficient curing reactivity, and capable of achieving a small change in viscosity and good electrical connection even when loaded with thermal history, a laminated sheet including the underfill material, and a method for manufacturing a semiconductor device. The underfill material has a melt viscosity at 150 C. before heating treatment of 50 Pa.Math.s or more and 3,000 Pa.Math.s or less, a viscosity change rate of 500% or less, at 150 C. as a result of the heating treatment, and a reaction rate represented by {(QtQh)/Qt}100% of 90% or more, where Qt is a total calorific value in a process of temperature rise from 50 C. to 300 C. and Qh is a total calorific value in a process of temperature rise from 50 C. to 300 C. after heating at 175 C. for 2 hours in a DSC measurement.

An underfill material having sufficient curing reactivity, and capable of achieving a small change in viscosity and good electrical connection even when loaded with thermal history, a laminated sheet including the underfill material, and a method for manufacturing a semiconductor device. The underfill material has a melt viscosity at 150 C. before heating treatment of 50 Pa.Math.s or more and 3,000 Pa.Math.s or less, a viscosity change rate of 500% or less, at 150 C. as a result of the heating treatment, and a reaction rate represented by {(QtQh)/Qt}100% of 90% or more, where Qt is a total calorific value in a process of temperature rise from 50 C. to 300 C. and Qh is a total calorific value in a process of temperature rise from 50 C. to 300 C. after heating at 175 C. for 2 hours in a DSC measurement.

Indentation visibility is improved and quick and accurate inspection is performed after a connection step using an anisotropic conductive film. A connection body according to the present disclosure comprises a transparent substrate and an electronic component connected to the transparent substrate via an anisotropic conductive adhesive; conductive particles contained by the anisotropic conductive adhesive cause a plurality of indentations arranged in an in-plane direction of a terminal of the transparent substrate.

Indentation visibility is improved and quick and accurate inspection is performed after a connection step using an anisotropic conductive film. A connection body according to the present disclosure comprises a transparent substrate and an electronic component connected to the transparent substrate via an anisotropic conductive adhesive; conductive particles contained by the anisotropic conductive adhesive cause a plurality of indentations arranged in an in-plane direction of a terminal of the transparent substrate.

An electronic device includes: a display panel including a first pad; a data driver including a second pad disposed to overlap the first pad in a thickness direction of the display panel and disposed on the display panel; and an adhesive layer disposed between the display panel and the data driver. The adhesive layer includes: an adhesive resin in contact with the display panel and the data driver; and a conductive particle disposed inside the adhesive resin and in contact with and electrically connected to the display panel and the data driver. The data driver includes a groove defined in a surface thereof facing the display panel, and a length of the groove in a first direction perpendicular to the thickness direction is smaller than or equal to a diameter of the conductive particle.

An electronic device includes: a display panel including a first pad; a data driver including a second pad disposed to overlap the first pad in a thickness direction of the display panel and disposed on the display panel; and an adhesive layer disposed between the display panel and the data driver. The adhesive layer includes: an adhesive resin in contact with the display panel and the data driver; and a conductive particle disposed inside the adhesive resin and in contact with and electrically connected to the display panel and the data driver. The data driver includes a groove defined in a surface thereof facing the display panel, and a length of the groove in a first direction perpendicular to the thickness direction is smaller than or equal to a diameter of the conductive particle.