A semiconductor device according to an embodiment includes a lead frame, a semiconductor chip provided above the lead frame, and a bonding material including a sintered material containing a predetermined metal material and a predetermined resin, where the bonding material includes a first portion provided between the lead frame and the semiconductor chip, and a second portion provided on the lead frame around the semiconductor chip, where the bonding material bonds the lead frame and the semiconductor chip, wherein an angle formed by a lower face of the semiconductor chip and an upper face of the second portion adjacent to the lower face is 80 degrees or less.

A semiconductor device according to an embodiment includes a lead frame, a semiconductor chip provided above the lead frame, and a bonding material including a sintered material containing a predetermined metal material and a predetermined resin, where the bonding material includes a first portion provided between the lead frame and the semiconductor chip, and a second portion provided on the lead frame around the semiconductor chip, where the bonding material bonds the lead frame and the semiconductor chip, wherein an angle formed by a lower face of the semiconductor chip and an upper face of the second portion adjacent to the lower face is 80 degrees or less.

Provided is a metal powder sintering paste having a high resistance to thermal stress. The present invention provides a metal powder sintering paste containing silver particles having an average particle diameter (median diameter) of 0.3 m to 5 m as a main component, further containing inorganic spacer particles having a CV value (standard deviation/average value) of less than 5%, and containing substantially no resin.

Provided is a metal powder sintering paste having a high resistance to thermal stress. The present invention provides a metal powder sintering paste containing silver particles having an average particle diameter (median diameter) of 0.3 m to 5 m as a main component, further containing inorganic spacer particles having a CV value (standard deviation/average value) of less than 5%, and containing substantially no resin.

Provided is a metal powder sintering paste having a high resistance to thermal stress. The present invention provides a metal powder sintering paste containing silver particles having an average particle diameter (median diameter) of 0.3 m to 5 m as a main component, further containing inorganic spacer particles having a CV value (standard deviation/average value) of less than 5%, and containing substantially no resin.

Provided is a metal powder sintering paste having a high resistance to thermal stress. The present invention provides a metal powder sintering paste containing silver particles having an average particle diameter (median diameter) of 0.3 m to 5 m as a main component, further containing inorganic spacer particles having a CV value (standard deviation/average value) of less than 5%, and containing substantially no resin.

According to one embodiment, a metallic particle paste includes a polar solvent and particles dispersed in the polar solvent and containing a first metal. A second metal different from the first metal is dissolved in the polar solvent.

According to one embodiment, a metallic particle paste includes a polar solvent and particles dispersed in the polar solvent and containing a first metal. A second metal different from the first metal is dissolved in the polar solvent.