A bonding material disclosed in this specification contains high melting point metal particles, low melting point metal particles, and a thermosetting flux resin. A mass proportion of the high melting point metal particles with respect to a total mass of the high melting point metal particles and the low melting point metal particles is 55% to 75%.

Embodiments of the present disclosure are directed towards techniques and configurations of interconnect structures having a polymer core in integrated circuit (IC) package assemblies. In one embodiment, an apparatus includes a first die having a plurality of transistor devices disposed on an active side of the first die and a plurality of interconnect structures electrically coupled with the first die, wherein individual interconnect structures of the plurality of interconnect structures have a polymer core, and an electrically conductive material disposed on the polymer core, the electrically conductive material being configured to route electrical signals between the transistor devices of the first die and a second die. Other embodiments may be described and/or claimed.

Embodiments of the present disclosure are directed towards techniques and configurations of interconnect structures having a polymer core in integrated circuit (IC) package assemblies. In one embodiment, an apparatus includes a first die having a plurality of transistor devices disposed on an active side of the first die and a plurality of interconnect structures electrically coupled with the first die, wherein individual interconnect structures of the plurality of interconnect structures have a polymer core, and an electrically conductive material disposed on the polymer core, the electrically conductive material being configured to route electrical signals between the transistor devices of the first die and a second die. Other embodiments may be described and/or claimed.

Particles that can suppress the occurrence of cracking or peeling during a thermal cycle in a connection part, that connects two members to be connected are provided. The particles according to the present invention are particles used to obtain a connecting material for forming a connection part that connects two members to be connected, and the particles are used for forming the connection part such that thickness of the connection part, after connection exceeds twice the average particle diameter of the particles before connection, or the particles have an average particle diameter of 0.1 nm or more and 15 m or less, the particles have a 10% K value of 30 N/mm.sup.2 or more and 3000 N/mm.sup.2 or less, and the particles have a particle diameter CV value of 50% or less.

Particles that can suppress the occurrence of cracking or peeling during a thermal cycle in a connection part that connects two members to be connected, further can suppress the variation in thickness in the connection part, and can increase the connection strength are provided. The particles according to the present invention are particles used to obtain a connecting material for forming a connection part that connects two members to be connected, and the particles are used for forming the connection part such that thickness of the connection part after connection is twice or less the average particle diameter of the particles before connection, or the particles have an average particle diameter of 1 m or more and 300 m or less, the particles have a 10% K value of 30 N/mm.sup.2 or more and 3000 N/mm.sup.2 or less, and the particles have a particle diameter CV value of 10% or less.

A display panel measures a contact resistance of an adhesive portion to evaluate adhesion quality of an integrated circuit mounted thereon. The display panel includes a plurality of light-emitting elements, a first pad part including a plurality of first effective pads electrically connected to the light-emitting elements, and n (n being a natural number equal to or greater than 2) first measuring pads insulated from the light-emitting elements, a conductive adhesive film on the first pad part and including a plurality of conductive balls, an integrated circuit on the conductive adhesive film, and including an internal line electrically connected to the first measuring pads by the conductive balls, and a second pad part including a plurality of second effective pads electrically connected to the first effective pads, and 2n second measuring pads electrically connected to the first measuring pads.

A display panel measures a contact resistance of an adhesive portion to evaluate adhesion quality of an integrated circuit mounted thereon. The display panel includes a plurality of light-emitting elements, a first pad part including a plurality of first effective pads electrically connected to the light-emitting elements, and n (n being a natural number equal to or greater than 2) first measuring pads insulated from the light-emitting elements, a conductive adhesive film on the first pad part and including a plurality of conductive balls, an integrated circuit on the conductive adhesive film, and including an internal line electrically connected to the first measuring pads by the conductive balls, and a second pad part including a plurality of second effective pads electrically connected to the first effective pads, and 2n second measuring pads electrically connected to the first measuring pads.

A resin composition is provided, including a binder resin, and silver-coated particles in which a functional group is introduced to a surface. A ratio (a/b) of Young's modulus (a) of the silver-coated particles to Young's modulus (b) of the binder resin after being cured is 0.1 to 2.0, and the Young's modulus (a) of the silver-coated particles is 0.05 to 2.0 GPa.

A semiconductor device connected by an anisotropic conductive film, the anisotropic conductive film having a differential scanning calorimeter onset temperature of 60 C. to 85 C., and a elastic modulus change of 30% or less, as calculated by Equation 1, below,
Elastic modulus change(%)={(M.sub.1M.sub.0)/M.sub.0}100[Equation 1] wherein M.sub.0 is an initial elastic modulus in kgf/cm.sup.2 of the anisotropic conductive film as measured at 25 C., and M.sub.1 is a elastic modulus in kgf/cm.sup.2 of the anisotropic conductive film as measured at 25 C. after the film is left at 25 C. for 170 hours.

A semiconductor device connected by an anisotropic conductive film, the anisotropic conductive film having a differential scanning calorimeter onset temperature of 60 C. to 85 C., and a elastic modulus change of 30% or less, as calculated by Equation 1, below,
Elastic modulus change(%)={(M.sub.1M.sub.0)/M.sub.0}100[Equation 1] wherein M.sub.0 is an initial elastic modulus in kgf/cm.sup.2 of the anisotropic conductive film as measured at 25 C., and M.sub.1 is a elastic modulus in kgf/cm.sup.2 of the anisotropic conductive film as measured at 25 C. after the film is left at 25 C. for 170 hours.