A micro LED display manufacturing method according to various embodiments may include: a first operation of bonding an anisotropic conductive film including a plurality of conductive particles onto one surface of a prepared substrate, the one surface including a circuit part; a second operation of forming a bonding layer on the anisotropic conductive film; a third operation of positioning a plurality of micro LED chips above the bonding layer, the micro LED chips being arranged on a carrier substrate while being spaced a first distance apart from the substrate; a fourth operation of attaching the plurality of micro LED chips onto the bonding layer by means of laser transfer; and a fifth operation of forming a conductive structure for electrically connecting a connection pad to the circuit part through the conductive particles by means of heating and pressurizing.

A micro LED display manufacturing method according to various embodiments may include: a first operation of bonding an anisotropic conductive film including a plurality of conductive particles onto one surface of a prepared substrate, the one surface including a circuit part; a second operation of forming a bonding layer on the anisotropic conductive film; a third operation of positioning a plurality of micro LED chips above the bonding layer, the micro LED chips being arranged on a carrier substrate while being spaced a first distance apart from the substrate; a fourth operation of attaching the plurality of micro LED chips onto the bonding layer by means of laser transfer; and a fifth operation of forming a conductive structure for electrically connecting a connection pad to the circuit part through the conductive particles by means of heating and pressurizing.

An adhesive member includes: a conductive particle layer including a plurality of conductive particles; a non-conductive layer disposed on the conductive particle layer; and a screening layer interposed between the conductive particle layer and the non-conductive layer and includes a plurality of screening members spaced apart from each other.

An adhesive member includes: a conductive particle layer including a plurality of conductive particles; a non-conductive layer disposed on the conductive particle layer; and a screening layer interposed between the conductive particle layer and the non-conductive layer and includes a plurality of screening members spaced apart from each other.

A hybrid bonding structure and a semiconductor including the hybrid bonding structure are provided. The hybrid bonding structure includes a solder ball and a solder paste bonded to the solder ball. The solder paste may include solder particles including at least one of In, Zn, SnBiAg alloy, or SnBi alloy, and ceramic particles. The solder paste may include a flux. The solder particles may include Sn(42.0 wt %)-Ag(0.4 wt %)-Bi(57.5−X) wt %, and the ceramic particles include CeO.sub.2(X) wt %, where 0.05≤X≤0.1.

A display panel measures a contact resistance of an adhesive portion to evaluate adhesion quality of an integrated circuit mounted thereon. The display panel includes a plurality of light-emitting elements, a first pad part including a plurality of first effective pads electrically connected to the light-emitting elements, and n (n being a natural number equal to or greater than 2) first measuring pads insulated from the light-emitting elements, a conductive adhesive film on the first pad part and including a plurality of conductive balls, an integrated circuit on the conductive adhesive film, and including an internal line electrically connected to the first measuring pads by the conductive balls, and a second pad part including a plurality of second effective pads electrically connected to the first effective pads, and 2n second measuring pads electrically connected to the first measuring pads.

A display panel measures a contact resistance of an adhesive portion to evaluate adhesion quality of an integrated circuit mounted thereon. The display panel includes a plurality of light-emitting elements, a first pad part including a plurality of first effective pads electrically connected to the light-emitting elements, and n (n being a natural number equal to or greater than 2) first measuring pads insulated from the light-emitting elements, a conductive adhesive film on the first pad part and including a plurality of conductive balls, an integrated circuit on the conductive adhesive film, and including an internal line electrically connected to the first measuring pads by the conductive balls, and a second pad part including a plurality of second effective pads electrically connected to the first effective pads, and 2n second measuring pads electrically connected to the first measuring pads.

A semiconductor device manufacturing method includes a preparation step and a sinter bonding step. In the preparation step, a sinter-bonding work having a multilayer structure including a substrate, semiconductor chips, and sinter-bonding material layers is prepared. The semiconductor chips are disposed on, and will bond to, one side of the substrate. Each sinter-bonding material layer contains sinterable particles and is disposed between each semiconductor chip and the substrate. In the sinter bonding step, a cushioning sheet having a thickness of 5 to 5000 μm and a tensile elastic modulus of 2 to 150 MPa is placed on the sinter-bonding work, the resulting stack is held between a pair of pressing faces, and, in this state, the sinter-bonding work between the pressing faces undergoes a heating process while being pressurized in its lamination direction, to form a sintered layer from each sinter-bonding material layer.

A semiconductor device manufacturing method includes a preparation step and a sinter bonding step. In the preparation step, a sinter-bonding work having a multilayer structure including a substrate, semiconductor chips, and sinter-bonding material layers is prepared. The semiconductor chips are disposed on, and will bond to, one side of the substrate. Each sinter-bonding material layer contains sinterable particles and is disposed between each semiconductor chip and the substrate. In the sinter bonding step, a cushioning sheet having a thickness of 5 to 5000 μm and a tensile elastic modulus of 2 to 150 MPa is placed on the sinter-bonding work, the resulting stack is held between a pair of pressing faces, and, in this state, the sinter-bonding work between the pressing faces undergoes a heating process while being pressurized in its lamination direction, to form a sintered layer from each sinter-bonding material layer.

An adhesive composition, containing an epoxy resin (A), an epoxy resin curing agent (B), a polymer component (C) and an inorganic filler (D), in which the inorganic filler (D) satisfies the condition (1) of (an average particle diameter (d50) is 0.1 to 3.5 μm) and condition (2) of (a ratio of a particle diameter at 90% cumulative distribution frequency (d90) to the average particle diameter (d50) is 5.0 or less), and a proportion of the inorganic filler (D) in a total content of the epoxy resin (A), the epoxy resin curing agent (B), the polymer component (C) and the inorganic filler (D) is 20 to 70% by volume; a film-like adhesive and a production method thereof; and a semiconductor package and a production method thereof.