A monolithic tandem photovoltaic cell includes a first electrode; a CIGS light absorption section on the first electrode; an interconnecting layer on the CIGS light absorption section; and a perovskite light absorption section on the inter-connecting layer. The interconnecting layer has a polished surface on which the perovskite light absorption section is formed. The interconnecting layer provides an electrically conducting and optically transparent connection between the CIGS light absorption section and the perovskite light absorption section.

A semiconductor device and method for fabricating same is disclosed. Embodiments are directed to a semiconductor device and fabrication of same which include a polycrystalline or amorphous substrate. An electrically conductive Ion Beam-Assisted Deposition (IBAD) template layer is positioned above the substrate. At least one electrically conductive hetero-epitaxial buffer layer is positioned above the IBAD template layer. The at least one buffer layer has a resistivity of less than 100 μΩcm. The semiconductor device and method foster the use of bottom electrodes thereby avoiding complex and expensive lithography processes.

The invention relates to a switchable absorber element and a photovoltaic cell based thereon. A switchable absorber element according to the invention has an absorber layer. The absorber element furthermore has at least one front side reflection layer and at least one rear side reflection layer, wherein the absorber layer is arranged between front side reflection layer and rear side reflection layer, wherein the optical path length between front side reflection layer and rear side reflection layer is less than 400 nm at least for light impinging perpendicularly onto the cell. The absorber element according to the invention is characterized in that at least one of the reflection layers has a switchable reflectivity.

A solar cell module according to the present disclosure includes a photoelectric converter, a collector electrode electrically connected to the photoelectric converter, and a wiring material (3) electrically connected to the collector electrode, wherein the collector electrode includes: a first electrode film (9A) formed on a photoelectric converter side; and a second electrode film (9B) formed on at least a wiring material side of the first electrode film (9A) so that part of a surface of the first electrode film (9A) on the wiring material side is exposed, and wherein the collector electrode and the wiring material (3) are electrically connected to each other with solder (11) connected to the part of the surface of the first electrode film (9A) exposed from the second electrode film (9B) and to a surface of the second electrode film (9B).

Provided is a method of manufacturing a photovoltaic solar cell, including: forming a first conductivity type region that contains a first conductivity dopant, on one surface of a semiconductor substrate and an opposite surface that is opposite to the one surface; removing the first conductivity type region formed on the opposite surface of the semiconductor substrate by performing dry etching; and forming a second conductivity type region that contains a second conductivity type dopant, on the opposite surface of the semiconductor substrate.

A transmitter of a wireless power transfer and data communication system comprising a transmitter system including a transmitter housing, one or more high-power laser sources, a laser controller, one or more low-power laser sources, one or more photodiodes, a beam steering system and lens assembly, and a safety system. High-power and low-power beams are directed to corresponding receivers and transceivers of a transceiver system inside a remote receiver system by the controller and the beam steering system and lens assembly. Low-power beams include optical communication to the transceiver system. The photodiodes of the transmitter system receive optical communication from the transceiver system. Low-power beams are co-propagated with and in close proximity to high-power beams substantially along an entire distance between the transmitter housing and the receiver system. The safety system instructs the controller to reduce the high-power sources in response to detected events.

A solar cell includes a crystalline silicon substrate, a P-doped silicon oxide layer that is formed on a principal surface of the crystalline silicon substrate and that includes phosphorus as an impurity, and an amorphous silicon layer that includes an intrinsic amorphous silicon layer and a p-type amorphous silicon layer. The intrinsic amorphous silicon layer is formed on the P-doped silicon oxide layer. The p-type amorphous silicon layer is formed on the intrinsic amorphous silicon layer and includes a p-type dopant. The intrinsic amorphous silicon layer includes the p-type dopant. The concentration of the p-type dopant in the thickness direction of the intrinsic amorphous silicon layer has a profile higher than the concentration of the p-type dopant at the interface between the P-doped silicon oxide layer and the intrinsic amorphous silicon layer.

A solar cell including a base region, a back surface field layer and a delta doping layer positioned between the base region and the back surface field layer.

n-type amorphous semiconductor layers (4) and p-type amorphous semiconductor layers (5) are alternately disposed on the back surface of a semiconductor substrate (1) so as to be separated from each other at a desired interval paralleled with the direction of the surface of the semiconductor substrate (1). An electrode (6) is disposed on the n-type amorphous semiconductor layer (4), and an electrode (7) is disposed on the p-type amorphous semiconductor layer (5). A protective film (8) includes an insulating film, and is disposed on a passivation film (3), the n-type amorphous semiconductor layer (4), the p-type amorphous semiconductor layer (5), and the electrodes (6, 7), so as to be in contact with the passivation film (3), the n-type amorphous semiconductor layer (4), the p-type amorphous semiconductor layer (5), and the electrodes (6, 7).

The present disclosure provides methodologies for manufacturing high efficiency silicon photovoltaic devices using hydrogen passivation to improve performance. The processing techniques disclosed use tailored thermal processes, sometimes coupled with exposure to radiation to enable the use of cheaper silicon material to manufacture high efficiency photovoltaic devices.