A monolithic sensor for detecting infrared and visible light according to an example includes a semiconductor substrate and a semiconductor layer coupled to the semiconductor substrate. The semiconductor layer includes a device surface opposite the semiconductor substrate. A visible light photodiode is formed at the device surface. An infrared photodiode is also formed at the device surface and in proximity to the visible light photodiode. A textured region is coupled to the infrared photodiode and positioned to interact with electromagnetic radiation.

A solid state imaging device includes: a pixel array unit that has a plurality of pixels 2-dimensionally arranged in a matrix and a plurality of signal lines arranged along a column direction; A/D conversion units that are provided corresponding to the respective signal lines and convert an analog signal output from a pixel through the signal line into a digital signal; and a switching unit that switches or converts the analog signal output through each signal line into a digital signal using any of an A/D conversion unit provided corresponding to the signal line through which the analog signal is transmitted, and an A/D conversion unit provided corresponding to a signal line other than the signal line through which the analog signal is transmitted.

Provided are an image sensor and an imaging apparatus. The image sensor of a multi-layered sensor structure, the image sensor includes a plurality of sensing pixels, each of the plurality of sensing pixels including a micro lens configured to collect light, a first photoelectric converter configured to convert light of a first wavelength band into an electric signal, and a second photoelectric converter formed on a substrate configured to convert incident light into the electric signal, wherein a central axis of the second photoelectric converter is spaced apart from an optical axis of the micro lens.

There is provided solid-state imaging devices and methods of forming the same, the solid-state imaging devices including: a semiconductor substrate; a glass substrate; an adhesion layer provided between the semiconductor substrate and the glass substrate; and a warpage correction film provided adjacent to one of the semiconductor substrate and the glass substrate.

A color separation element array includes color separation elements which are two-dimensionally arranged to separate an incident light according to a wavelength such that a light of a first wavelength is directed to a first direction and a light of a second wavelength that is different from the first wavelength is directed to a second direction that is different from the first direction. Each of the color separation elements includes a first element and a second element that are sequentially arranged along a traveling direction of the incident light, and the first element and the second element of the color separation elements are symmetrically shifted with respect to a center area of the color separation element array, to be aligned to fit to the traveling direction of the incident light that is obliquely incident.

A semiconductor device has a chip region including a back-side illumination type photoelectric conversion element, a mark-like appearance part, a pad electrode, and a coupling part. The mark-like appearance part includes an insulation film covering the entire side surface of a trench part formed in a semiconductor substrate. The pad electrode is arranged at a position overlapping the mark-like appearance part. The coupling part couples the pad electrode and mark-like appearance part. At least a part of the pad electrode on the other main surface side of the substrate is exposed through an opening reaching the pad electrode from the other main surface side of the substrate. The mark-like appearance part and coupling part are arranged to at least partially surround the outer circumference of the opening in plan view.

A bio-sensor includes a substrate having a light-sensing region thereon. A first dielectric layer, a diffusion barrier layer, and a second dielectric layer are disposed on the substrate. A trenched recess structure is formed in the second dielectric layer, which is filled with a light filter layer that is capped with a cap layer. A first passivation layer and a nanocavity construction layer are disposed on the cap layer. A nanocavity is formed in the nanocavity construction layer. The sidewall and bottom surface of the nanocavity is lined with a second passivation layer.

In each pixel having a plurality of photodiodes for one microlens of a plurality of pixels arranged in a pixel array part, the photoelectrically converted electrons are prevented from moving between the photodiodes, thereby to improve the electron isolating characteristic, resulting in improved performances of a semiconductor device. In a well region immediately under between a first N.sup. type semiconductor region forming a first photodiode in a pixel and a second N.sup. type semiconductor region forming a second photodiode in the pixel, an isolation region higher in impurity density than the well region is formed.

An image sensor including color filter groups and microlenses is provided. The color filter groups may include first, second and third color filter groups. The first color filter group includes a first first wavelength band filter and a second first wavelength band filter. The third color filter group includes a first third wavelength band filter. A first microlens on the first first wavelength band filter has a different size than a second microlens on the second first wavelength band filter. A diameter of the first microlens on the first first wavelength band filter is larger than a diameter of a third microlens on the first third wavelength band filter. The microlenses overlap at least four of the color filters.

A camera module and an array camera module based on an integral packing process are disclosed. The camera module or each of the camera module units of the array camera module includes a circuit board, an integral base, a photosensitive element operatively connected to the circuit board, a lens, a light filter holder installed at the integral base and a light filter installed at the light filter holder. The light filter is not required to be directly installed to the integral base, so that the light filter is protected and the requiring area of the light filter is reduced.