A micro-LED chip includes multiple micro-LEDs. At least one micro-LED of the multiple micro-LEDs includes: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer. The light emitting layer is continuously formed on the whole micro-LED chip, the multiple micro-LEDs sharing the light emitting layer. The micro-LED chip further includes: a top spacer formed on a top surface of the light emitting layer; a bottom spacer formed on a bottom surface of the light emitting layer; and an isolation structure formed between adjacent micro-LEDs.

A semiconductor light emitting device includes first and second light emitting bodies, a first electrode, a second electrode and a first interconnection. The first and second light emitting bodies are disposed on a conductive substrate, and each includes first and second semiconductor layers and a light emitting layer therebetween. The first electrode is provided between the first light emitting body and the conductive substrate, and electrically connected to a first semiconductor layer and the conductive substrate. The second electrode is provided between the second light emitting body and the conductive substrate, and electrically connected to a first semiconductor layer. The first interconnection electrically connects the second semiconductor layer of the first light emitting body and the second electrode. The first interconnection includes a first portion extending over the first and second light emitting bodies and a second portion extending into the second light emitting body.

The device according to the invention comprises a nanostructured LED with a first group of nanowires protruding from a first area of a substrate and a contacting means in a second area of the substrate. Each nanowire of the first group of nanowires comprises a p-i-n-junction and a top portion of each nanowire or at least one selection of nanowires is covered with a light reflecting contact layer. The contacting means of the second area is in electrical contact with the bottom of the nanowires, the light-reflecting contact layer being in electrical contact with the contacting means of the second area via the p-i-n-junction. Thus when a voltage is applied between the contacting means of the second area and the light-reflecting contact layer, light is generated within the nanowire. On top of the light-reflecting contact layer, a first group of contact pads for flip-chip bonding can be provided, distributed and separated to equalize the voltage across the layer to reduce the average serial resistance.

A light-emitting diode (LED) projector includes an LED display panel and a projection lens arranged in front of LED display panel and configured to collect and project light emitted by the LED display panel. The LED display panel includes an LED panel and a micro lens array arranged over the LED panel. The LED panel includes a substrate, a driver circuit array on the substrate and including a plurality of pixel driver circuits arranged in an array, and an LED array including a plurality of LED dies each being coupled to one of the pixel driver circuits. The micro lens array includes a plurality of micro lenses each corresponding to and being arranged over at least one of the LED dies.

A backlight unit includes a backlight module with a printed circuit board including blocks and MJT LEDs disposed on the blocks, respectively and a backlight control module generating a signal for drive control of each of the blocks, wherein each of the blocks comprises at least one MJT LED, and the backlight control module includes a drive controller for On/Off control and dimming control of each of the blocks.

A light emitting device package and a method of manufacturing the light emitting device package are provided. The light emitting package includes a light emitting stack including a first conductivity-type semiconductor layer, an active layer, a second conductivity-type semiconductor layer sequentially stacked, and having a first surface provided by the first conductivity-type semiconductor layer and a second surface provided by the second conductivity-type semiconductor layer and opposing the first surface; a first electrode structure disposed on a portion of the first surface and connected to the first conductivity-type semiconductor layer; a sealing portion disposed adjacent to the light emitting stack; an insulating layer disposed between the light emitting stack and the sealing portion; and a first metal pad disposed on the second surface and passing through the insulating layer at a side of the light emitting stack to connect to the first electrode structure.

A light emitting device including a light emitting structure disposed on one surface of a substrate and a transflective portion disposed on the other surface of the substrate. The transflective portion and the substrate have different indexes of refraction from one another.

A light emitting device includes a substrate, a first light emitting element, a second light emitting element, a first conductive pattern, and a second conductive pattern. The first conductive pattern is provided on the substrate and includes a first element mounting portion and a first wire connecting portion. The second conductive pattern is provided on the substrate to form a first wiring gap between the first conductive pattern and the second conductive pattern. A first recess is provided between the first element mounting portion and the first wire connecting portion and is in communication with the first wiring gap. At least a part of an outer shape of the first element mounting portion is defined by the first wiring gap and the first recess on a third side of the first element mounting portion adjacent to the second conductive pattern.

A method for producing an optoelectronic semiconductor component having a plurality of image points and an optoelectronic component are disclosed. In an embodiment the method includes providing a semiconductor layer sequence including an n-conducting semiconductor layer, an active zone, and a p-conducting semiconductor layer; applying a first layer sequence, wherein the first layer sequence is divided into a plurality of regions which are arranged laterally spaced with respect to each other on a top surface of the p-conducting semiconductor layer; c) applying a second insulating layer; partially removing the p-conducting semiconductor layer and the active zone, in such a way that the n-conducting semiconductor layer is exposed at points and the p-conducting semiconductor layer is divided into individual regions which are laterally spaced with respect to each other, wherein each of the regions comprises a part of the p-conducting semiconductor layer and a part of the active zone.

A method for manufacturing a micro LED display is provided. The method includes providing a plurality of LED elements on a first substrate, transferring, using a magnetic holder or a vacuum holder, at least two of the plurality of LED elements of the same primary color from the first substrate to a second substrate, performing the steps of the providing and the transferring with respect to three primary colors, forming an array of RGB LED units on the second substrate, each of the array of RGB LED units including a red LED element, a green LED element, and a blue LED element, interposing the array of RGB LED units between the second substrate and an LED driver wafer, detaching the second substrate from the array of RGB LED units, and interposing the array of RGB LED units between the LED driver wafer and a cover.