H10H29/14

LIGHT-EMITTING DEVICE AND SENSING SYSTEM

A light-emitting device that emits output light, is a light-emitting device that includes: a light-emitting element that emits a primary light; and a wavelength converter that converts at least a portion of the primary light into a secondary light. The output light includes at least a portion of the secondary light. The output light has a light intensity greater than or equal to a predetermined value throughout an entire wavelength range of from 750 nm to 900 nm, inclusive. A ratio of a light intensity of the output light at 900 nm to a light intensity of the output light at 750 nm is greater than or equal to 0.2 and less than 3.0. The output light has a spectral luminosity of at least 0.1 lm/W and at most 10 lm/W.

LIGHT-EMITTING SUBSTRATE AND DISPLAY DEVICE
20250113688 · 2025-04-03 ·

The present application provides a light-emitting substrate and a display device, the light-emitting substrate includes a substrate, multiple signal lines, and multiple light-emitting units. The signal lines at least include a first signal line and a second signal line. The first signal line is provided with a signal access terminal and a first connection terminal. The second signal line is provided with a second connection terminal. The first connection terminal is electrically connected to the second connection terminal, and the signal access terminal receives signals.

ENGINEERED SCATTERING IN LED ENCAPSULANTS FOR TUNABLE OPTICAL FAR-FIELD RESPONSE
20250113698 · 2025-04-03 · ·

A light engine with distinct light sources sharing at least one optic may employ scattering particles to change the illuminance line profiles of one or more of the light sources so that they are more uniformly mixed in the far-field. The scattering particles may be integrated into phosphor layers of specific light sources or may be disposed in a separate layer. The scattering particles may be tunable based on the particular characteristics of the light source, such as their spectral characteristics or their chemical mixing characteristics.

METHOD FOR MANUFACTURING A SEMICONDUCTOR ARRANGEMENT AND SEMICONDUCTOR ARRANGEMENT
20250113680 · 2025-04-03 ·

In an embodiment a semiconductor arrangement includes at least one semiconductor component with a functional layer stack. The functional layer stack includes a first layer of a first conductivity type, a second layer of a second conductivity type arranged on the first layer, an active zone located between the first and the second layer and an electrically conductive nanowire layer, wherein the electrically conductive nanowire layer is arranged at least in regions on a side of the second layer facing away from the first layer. The semiconductor arrangement further includes a holding layer with at least one elevation, wherein the at least one semiconductor component is arranged on the at least one elevation such that a cavity is formed between the at least one semiconductor component and the holding layer, and wherein the nanowire layer is at least partially exposed.

METHOD FOR MANUFACTURING A SEMICONDUCTOR ARRANGEMENT AND SEMICONDUCTOR ARRANGEMENT
20250113680 · 2025-04-03 ·

In an embodiment a semiconductor arrangement includes at least one semiconductor component with a functional layer stack. The functional layer stack includes a first layer of a first conductivity type, a second layer of a second conductivity type arranged on the first layer, an active zone located between the first and the second layer and an electrically conductive nanowire layer, wherein the electrically conductive nanowire layer is arranged at least in regions on a side of the second layer facing away from the first layer. The semiconductor arrangement further includes a holding layer with at least one elevation, wherein the at least one semiconductor component is arranged on the at least one elevation such that a cavity is formed between the at least one semiconductor component and the holding layer, and wherein the nanowire layer is at least partially exposed.

OPTOELECTRONIC COMPONENT, AND METHOD FOR MANUFACTURING AN OPTOELECTRONIC COMPONENT
20250113678 · 2025-04-03 ·

The invention relates to an optoelectronic component comprising an optoelectronic semiconductor chip having an emission surface which is located on an upper side and is designed to emit light into an emission space. The emission surface is laterally delimited by a cover which has: a first portion that annularly delimits the emission surface; and a second portion. The cover is designed in such a way that light incident on the second portion of the cover from outside the optoelectronic component is predominantly reflected. Light emitted from the emission surface towards the cover is predominantly deflected by the cover in such a way that it is not specularly reflected into the emission space.

Display device and method of manufacturing the same
12266678 · 2025-04-01 · ·

A display device includes a substrate including a display area having a plurality of pixel areas and a non-display area located around the display area; a circuit element layer including a circuit element in each of the pixel areas and a reference voltage wiring in the non-display area, the reference voltage wiring being electrically coupled to the circuit element; and a display element layer including a first pixel electrode on the circuit element layer in each of the pixel areas, a second pixel electrode located opposite to the first pixel electrode, a plurality of light emitting elements between the first pixel electrode and the second pixel electrode, and a first wiring on the circuit element layer in the non-display area, wherein the first wiring is directly coupled to the reference voltage wiring in the non-display area.

Display module and manufacturing method thereof

A display module is disclosed. The display module includes pixels provided on the substrate, one of which includes: inorganic light emitting elements configured to emit light of a same color; light dispersing layers provided on light emitting surfaces of the inorganic light emitting elements; color conversion layers provided on the light dispersing layers; and color filters provided on the color conversion layers. When viewed from above an upper surface of the substrate, the light dispersing layers are larger than the inorganic light emitting elements.

Micro-LED structure including continuous light emitting layer, and micro-LED chip including same

A micro-LED chip includes multiple micro-LEDs. At least one micro-LED of the multiple micro-LEDs includes: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer. The light emitting layer is continuously formed on the whole micro-LED chip, the multiple micro-LEDs sharing the light emitting layer. A profile of the second type conductive layer perpendicularly projected on a top surface of the first type conductive layer is surrounded by an edge of the first type conductive layer.

Display device
12261192 · 2025-03-25 · ·

A display device includes a first electrode disposed on a substrate; a second electrode disposed on the substrate, the second electrode being spaced apart from, and facing, the first electrode in a first direction; and a plurality of light-emitting elements extending in a length direction and having both ends disposed on the first electrode and second electrode, respectively, wherein the first electrode includes a plurality of first patterns which are recessed from a top surface of the first electrode and from a side surface of the first electrode that faces the second electrode, and the second electrode includes a plurality of second patterns which are recessed from a top surface of the second electrode and from a side surface of the second electrode that faces the first electrode.