Patent classifications
H10H29/14
Display device and method for manufacturing the same
A method for manufacturing a display device includes forming a drive circuit to drive an LED element on an insulating substrate; forming a light absorbing layer on the drive circuit; forming an insulating layer covering the light absorbing layer; forming a connecting electrode electrically connected to the drive circuit; arranging the LED element so that the connecting electrode is in contact with a terminal electrode of the LED element; and bonding the connecting electrode and the terminal electrode by irradiating laser light through a semiconductor layer of the LED element to the light absorbing layer.
Display device having a pad part disposed on a barrier layer, method of manufacturing the same and tiled display device including the same
Provided is a display device. The display device comprises a first substrate, a barrier layer disposed on the first substrate and having amorphous carbon, a first pad part disposed on the barrier layer, a second substrate disposed on the first pad part, a display layer disposed on the second substrate, and a second pad part disposed on a bottom surface of the first substrate and inserted into a first contact hole formed in the first substrate and the barrier layer.
Pixel for micro-display having vertically stacked sub-pixels
A unit pixel of a microdisplay is disclosed. In the unit pixel, sub-pixels that form blue light, green light, and red light are vertically stacked on a growth substrate. Accordingly, the unit pixel area may be reduced, and pixel transfer processing is facilitated.
LIGHT-EMITTING DEVICE
A light-emitting device includes: a substrate; a plurality of light-emitting elements on or above the substrate, each of the light-emitting elements having an upper surface serving as a light-emitting surface and having a rectangular shape in a plan view from above the light-emitting device; and a plurality of light-transmissive members each having a rectangular shape in a plan view from above the light-emitting device and having a lower surface that faces the upper surface of each light-emitting element;
HIGH-VOLTAGE SOLID-STATE TRANSDUCERS AND ASSOCIATED SYSTEMS AND METHODS
High-voltage solid-state transducer (SST) devices and associated systems and methods are disclosed herein. An SST device in accordance with a particular embodiment of the present technology includes a carrier substrate, a first terminal, a second terminal and a plurality of SST dies connected in series between the first and second terminals. The individual SST dies can include a transducer structure having a p-n junction, a first contact and a second contact. The transducer structure forms a boundary between a first region and a second region with the carrier substrate being in the first region. The first and second terminals can be configured to receive an output voltage and each SST die can have a forward junction voltage less than the output voltage.
Micro-LED structure and micro-LED chip including same
A micro-LED chip includes multiple micro-LEDs. At least one micro-LED of the multiple micro-LEDs includes: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer. The light emitting layer is continuously formed on the whole micro-LED chip, the multiple micro-LEDs sharing the light emitting layer. The micro-LED chip further includes: a top spacer formed on a top surface of the light emitting layer; a bottom spacer formed on a bottom surface of the light emitting layer; and an isolation structure formed between adjacent micro-LEDs.
Ultraviolet light emitting element and light emitting element package including the same
An embodiment discloses an ultraviolet light emitting element including: a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, and an etched region in which the first conductive semiconductor layer is exposed; a first insulating layer disposed on the light emitting structure and including a first hole which exposes a portion of the etched region; a first electrode electrically connected to the first conductive semiconductor layer; and a second electrode electrically connected to the second conductive semiconductor layer, wherein the light emitting structure includes an intermediate layer regrown on the first conductive semiconductor layer exposed in the first hole, the first electrode is disposed on the intermediate layer, the etched region includes a first etched region disposed at an inner side and a second etched region disposed at an outer side based on an outer side surface of the first electrode, and a ratio of an area of the first etched region and an area of the intermediate layer is 1:0.3 to 1:0.7, and a light emitting element package including the same.
Optical element and optical concentration measuring apparatus
Provided is an optical element, in which: an internal wiring portion electrically connects a first contact electrode portion and a second contact electrode portion to each other; a second region, an active layer and a second conductive semiconductor layer form a mesa structure; a pad electrode is placed so as to cover a plurality of unit elements, and is electrically connected to at least one of the first contact electrode portion and the second contact electrode portion; a first insulating portion is placed between the pad electrode and a first region of a side surface of a mesa structure and a first conductive semiconductor layer; and a diameter of a circle circumscribed to a region where the pad electrode and a connection portion are in contact with each other is 15% or more of a length of a short side of a substrate.
Method for manufacturing display device
The present disclosure provides a method for manufacturing a display device. The method includes providing a light emitting module, providing a driving module, providing a light conversion module, and assembling the light emitting module, the driving module, and the light conversion module to form a display assembly. The light emitting module is disposed between the light conversion module and the driving module.
Light emitting stacked structure including epitaxial layers connecting with electrodes and display device having the same
A light module including a circuit substrate and a light emitter, the light emitter including a light source configured to generate light and including a first epitaxial layer, a second epitaxial layer, and an active layer, an insulation layer covering the light source, a first electrode electrically connected to the first epitaxial layer, a light guide configured to guide light generated from the light source, a transparent material covering the light source, and an angle controller disposed on the transparent material, in which the light guide has a guide hole filled with the transparent material, and a refractive index of the light guide is different from that of the light source.