A red phosphor including the composition represented by the following general formula.

(x-a)MgO.Math.(a/2)Sc.sub.2O.sub.3.Math.yMgF.sub.2.Math.cCaF.sub.2.Math.(1-b)GeO.sub.2.Math.(b/2)Mt.sub.2O.sub.3:zMn.sup.4+ where x, y, z, a, b, and c satisfy 2.0x4.0, 0<y<1.5, 0<z<0.05, 0a<0.5, 0<b<0.5, 0c<1.5, and y+c<1.5, and Mt is at least one element selected from the group consisting of Al, Ga, and In.

A light-emitting device includes a plurality of light-emitting elements, a phosphorescent phosphor layer including a green phosphorescent phosphor that emits green light and has an afterglow property, and a sealing resin that disperses the green phosphorescent phosphor. The light-emitting device includes a red phosphor that emits red light, a sealing resin that disperses the red phosphor, and a red phosphor layer that contains only a red phosphor as a phosphor. The phosphorescent phosphor layer and the red phosphor layer are disposed apart from each other, and the light-emitting device emits white light while electric current is supplied to the plurality of light-emitting elements, and emits green light after ending the supply of the electric current to the light-emitting elements.

Light emitting devices comprise a substrate having a surface and a side surface; a semiconductor structure on the surface of the substrate, the semiconductor structure having a first surface, a second surface and a side surface, wherein the second surface is opposite the first surface, wherein the first surface, relative to the second surface, is proximate to the substrate, and wherein the semiconductor structure comprises a first-type layer, a light emitting layer and a second-type layer; a first and a second electrodes; and a wavelength converting element arranged on the side surface of the semiconductor structure, wherein the wavelength converting element has an open space, and wherein the open space is a portion not covered by the wavelength converting element.

A light emitting device including a light emitting element that has a peak light emission wavelength of from 400 nm to 455 nm, a first fluorescent material that has a peak fluorescence wavelength in the range of from 650 nm to 670 nm, and a second fluorescent material that has a peak fluorescence wavelength in the range of from 520 nm to 550 nm, wherein the light emitting device exhibits a light emission spectrum with an average light emission strength of 30% or less in the range of from 600 nm to 620 nm, when the maximum light emission strength in the range of from 520 nm to 550 nm is taken as 100%.

A light emitting apparatus is disclosed. The light emitting apparatus includes a substrate and a light emitting region disposed on the substrate and including a first light emitter and a second light emitter. The light emitted from the first light emitter has a first spectrum, light emitted from the second light emitter has a second spectrum, The first light emitter includes a first light emitting device emitting light having a first peak wavelength and a first wavelength converter emitting a first light. The second light emitter includes a second light emitting device emitting the second spectrum. The first spectrum and the second spectrum has at least one different peak wavelength. and The light of the light emitting region has a third spectrum that is mixture of the first spectrum and the second spectrum.

Provided is a light-emitting device capable of improving discernibility of letters or the like when used by a person with reduced visual sensitivity to blue light. The light-emitting device comprises a light-emitting element emitting light having an emission peak wavelength in a range of 440 nm to 470 nm, and a wavelength conversion member including a plurality of phosphors emitting light when excited by the light from the light emitting element. Ratios of luminous intensities of the light emitted from the light emitting device at wavelengths 480 nm, 530 nm, and 550 nm to the luminous intensity at the peak emission wavelength attributed to the light emitting element in an emission spectrum are 0.05 to 0.20, 0.20 to 0.35, and 0.23 to 0.38, respectively.

Proposed is a light source comprising: first and second semiconductor diode structures adapted to generate light, the first and second semiconductor diode structures being laterally adjacent to each other; a light output section at least partially overlapping both of the first and second semiconductor diode structures and adapted to output light from the first and second semiconductor diode structures; and a light reflecting structure at least partially enclosing side surfaces of the first and second semiconductor diode structures and the light output section and adapted to reflect light from the semiconductor diode structures towards the light output section. The area of the light output section is less than the combined area of the first and second semiconductor diode structures.

Provided is an LED production method that can produce a great number of high-quality LEDs at low production cost. A binder-rich layer is formed on LEDs to increase the adhesiveness between the LEDs and a substrate; a phosphor layer or phosphor-rich layer is formed over the layer with a mask put on the layer; and the phosphor or a mixture of the phosphor and binder on the mask is recovered and reused.

A lighting device, in various embodiments, for generating a light emission, has a light source designed to generate light with a first dominant wavelength, a first converter designed to absorb the light generated by the light source and to emit light with a second dominant wavelength, which is longer than the first dominant wavelength, and a second converter designed to absorb a portion of the light emitted by the first converter and to emit light such that the light emission has a third dominant wavelength, which is longer than the second dominant wavelength.

An optoelectronic device including an array of light-emitting diodes and photoluminescent blocks opposite at least part of the light-emitting diodes, each light-emitting diode having a lateral dimension smaller than 30 m, each photoluminescent block including semiconductor crystals having an average size smaller than 1 m, dispersed in a binding matrix.