A display device using semiconductor light emitting devices is disclosed. The display device includes a substrate, a plurality of first electrodes disposed on the substrate, a light emitting device array comprising a plurality of semiconductor light emitting devices electrically connected to the first electrodes, constituting individual pixels, and having different brightnesses increasing from one side of a current input direction of each of the first electrodes to the other side of the current input direction, and a plurality of second electrodes electrically connected to the semiconductor light emitting devices. Thus, brightness variation caused by power loss may be reduced in a display device of PM type using light emitting device array, thereby reducing load effect that is a problem of the device of PM type using light emitting device array.

Provided is a light-emitting device that has a high emission efficiency, excellent stability and temperature properties, and that generates light having a high color rendering property sufficient for practical use. This semiconductor light-emitting device comprises a semiconductor light-emitting element that emits blue light, a green phosphor that absorbs the blue light and emits green light, and an orange phosphor that absorbs the blue light and emits orange light, and is characterized in that the orange phosphor is an Eu-activated -SiAlON phosphor having an emission spectrum peak wavelength within a range of 595 to 620 nm.

An optoelectronic semiconductor component is disclosed. In an embodiment, the semiconductor component includes at least one optoelectronic semiconductor chip for generating primary radiation in a near-ultraviolet or in a visible spectral range, at least one phosphor for partial or complete conversion of the primary radiation into a longer-waved secondary radiation which is in the visible spectral range and at least one filter substance for partial absorption of the secondary radiation, wherein the phosphor and the filter substance are closely connected to the semiconductor chip.

A display device include a substrate including a wiring electrode; an adhesive layer disposed on the substrate; a plurality of semiconductor light emitting devices adhered to the adhesive layer, and electrically connected to the wiring electrode; and a phosphor layer disposed to cover the plurality of semiconductor light emitting devices. Further, the phosphor layer includes a plurality of phosphor portions for converting a wavelength of light, and a plurality of partition wall portions formed between the plurality of phosphor portions, and the plurality of partition wall portions are sequentially disposed between the phosphor portions along a first direction and a second direction crossing each other, respectively, and at least one of the sequentially disposed partition wall portions overlaps with at least one of the plurality of semiconductor light emitting devices.

A method of manufacturing a fluoride phosphor represented by a chemical formula A.sub.3MF.sub.7:Mn.sup.4+ includes forming a first mixture by mixing a first raw material containing A.sub.2MF.sub.6 and a second raw material containing AF or AHF.sub.2, forming a second mixture by mixing the first mixture and a sintering aid, and firing the second mixture. In the chemical formula, A is at least one selected from Li, Na, K, Rb, Cs and mixtures thereof, and M is at least one selected from Si, Ti, Zr, Hf, Ge, Sn, and mixtures thereof.

A lighting device including a blue solid state emitter, at least one yellow-green or green lumiphoric material, and at least one red or red-orange solid state emitter can simultaneously provide high color fidelity (e.g., high CRI Ra), high color saturation (e.g., high Qg), and high efficiency (e.g., lumens per watt). A subcombination of blue and yellow-green emissions is provided within one or more specified regions of a 1931 CIE chromaticity diagram. By providing sufficient green content, increased saturation can be active with relatively a short wavelength red or red-orange source while maintaining high color fidelity and efficacy. A mixture of green and yellow lumiphoric materials may be provided.

A light emitting device includes an epitaxial structure and a sheet-shaped wavelength converting layer. The sheet-shaped wavelength converting layer is disposed on the epitaxial structure and at least includes a first wavelength converting unit layer and a second wavelength converting unit layer. The first wavelength converting unit layer is disposed between the second wavelength converting unit layer and the epitaxial structure. An emission peak wavelength of the first wavelength converting unit layer is greater than an emission peak wavelength of the second wavelength converting unit layer. A full width half magnitude of the second wavelength converting unit layer is greater than a full width half magnitude of the first wavelength converting unit layer.

A method for producing an optoelectronic semiconductor chip is disclosed. In an embodiment, the method includes providing a semiconductor body with a pixel region including different subpixel regions, each subpixel region having a radiation exit face, applying an electrically conductive layer onto the radiation exit face of a subpixel region, wherein the electrically conductive layer is suitable at least in part for forming a salt with a protic reactant, and depositing a conversion layer on the electrically conductive layer using an electrophoresis process, wherein the deposited conversion layer comprises pores.

A light-emitting device includes a light-emitting structure with a side surface, and a reflective layer covering the side surface. The light-emitting structure has a first light-emitting angle and a second light-emitting angle. The difference between the first light-emitting angle and the second light-emitting angle is larger than 15.

A display apparatus includes a light emitting diode part and a thin film (TFT) panel configured to drive the light emitting diode part. The light emitting diode part includes a transparent support substrate, a plurality of light emitting diodes, a plurality of phosphor layers disposed on the support substrate covering at a first portion of the plurality of light emitting diodes and configured to emit light through a conversion of introduced light. Another display apparatus includes a light emitting diode part including a plurality of light emitting diodes and a TFT panel configured to drive the light emitting diode part. The TFT panel includes a panel substrate including a TFT driving circuit and a plurality of grooves formed on the panel substrate. The TFT panel also includes a plurality of phosphor layers the plurality of grooves and configured to emit light through wavelength conversion of introduced light.