Methods and structures of barrier detectors are described. The structure may include an absorber that is at least partially reticulated. The at least partially reticulated absorber may also include an integrated electricity conductivity structure. The structure may include at least two contact regions isolated from one another. The structure may further include a barrier layer disposed between the absorber and at least two contact regions.

Some implementations described herein provide an optoelectronic device including a multi-layer photodiode structure having multiple sensing structures formed from one or more quantum effect materials (e.g., formed from multiple layers of quantum effect materials). The multiple sensing structures, which include sidewalls that are in contact with a substrate of the optoelectronic device, may be stacked and include overlapping portions. Through use of the multi-layer photodiode structure including the multiple sensing structures, a quantum length is increased relative to another photodiode structure including a single, planar sensing structure formed from a layer of a quantum effect material.

Some implementations described herein provide an optoelectronic device including a multi-layer photodiode structure. The multi-layer photodiode structure includes a stacked configuration of multiple sensing structures formed from quantum effect materials (e.g., a germanium material). By using the stacked configuration of multiple sensing structures, a quantum effect length is increased relative to another photodiode including a single layer photodiode structure. Furthermore, a lower sensing structure of the multi-layer sensing structure shares a substrate with integrated circuitry of the optoelectronic device. The lower sensing structure is electrically isolated from the integrated circuitry by doped isolation regions adjacent to sidewalls of the lower sensing structure.

An infrared image sensor component includes at least one III-V compound layer on the semiconductor substrate, in which the portion of the III-V compound layer(s) uncovered by the patterns is utilized as active pixel region for detecting the incident infrared ray. The infrared image sensor component includes at least one transistor coupled to the active pixel region, and charge generated by the active pixel region is transmitted to the transistor.

A structure includes a silicon substrate; silicon readout circuitry disposed on a first portion of a top surface of the substrate and a radiation detecting pixel disposed on a second portion of the top surface of the substrate. The pixel has a plurality of radiation detectors connected with the readout circuitry. The plurality of radiation detectors are composed of at least one visible wavelength radiation detector containing germanium and at least one infrared wavelength radiation detector containing a Group III-V semiconductor material. A method includes providing a silicon substrate; forming silicon readout circuitry on a first portion of a top surface of the substrate and forming a radiation detecting pixel, on a second portion of the top surface of the substrate, that has a plurality of radiation detectors formed to contain a visible wavelength detector composed of germanium and an infrared wavelength detector composed of a Group III-V semiconductor material.

A structure includes a silicon substrate; silicon readout circuitry disposed on a first portion of a top surface of the substrate and a radiation detecting pixel disposed on a second portion of the top surface of the substrate. The pixel has a plurality of radiation detectors connected with the readout circuitry. The plurality of radiation detectors are composed of at least one visible wavelength radiation detector containing germanium and at least one infrared wavelength radiation detector containing a Group semiconductor material. A method includes providing a silicon substrate; forming silicon readout circuitry on a first portion of a top surface of the substrate and forming a radiation detecting pixel, on a second portion of the top surface of the substrate, that has a plurality of radiation detectors formed to contain a visible wavelength detector composed of germanium and an infrared wavelength detector composed of a Group III-V semiconductor material.

There is provided a photodetector, comprising a semiconductor heterostructure having in sequence: a first collection layer having substantially uniform doping of a first doping type; a radiation-absorbing layer having substantially uniform doping of the first doping type and having a band gap less than or equal to that of the first collection layer; and a barrier layer having a band gap greater than that of the radiation-absorbing layer, the top of the valence band of the barrier layer being substantially equal in energy to that of the radiation-absorbing layer where the first doping type is n-type or the bottom of the conduction band of the barrier layer being substantially equal in energy to that of the radiation-absorbing layer where the first doping type is p-type; wherein a first portion of the barrier layer is of the first doping type and a second portion of the barrier layer is of a second doping type, the first portion of the barrier layer being adjacent to the radiation-absorbing layer, forming a heterojunction within the barrier layer which gives rise to a depletion region within each portion of the barrier layer.

A method for producing a semiconductor element includes a step of forming a multiple quantum well in which a GaSb layer and an InAs layer are alternately stacked on a GaSb substrate by MOVPE, wherein, in the step of forming a multiple quantum well, an InSb film is formed on at least one of a lower-surface side and an upper-surface side of the InAs layer so as to be in contact with the InAs layer.

An avalanche photodiode (APD) array with reduced cross talk comprises, in the illustrative embodiment, a 2D array of Geiger-mode APDs, wherein a via is formed through the backside (substrate) of each APD in the array.

A first light receiving element according to an embodiment of the present disclosure includes a plurality of pixels, a photoelectric converter that is provided as a layer common to the plurality of pixels, and contains a compound semiconductor material, and a first electrode layer that is provided between the plurality of pixels on light incident surface side of the photoelectric converter, and has a light-shielding property.