Depositing gallium nitride and carbon (GaN:C) (e.g., in the form of composite layers) when forming a gallium nitride drain of a transistor provides a buffer between the gallium nitride of the drain and silicon of a substrate in which the drain is formed. As a result, gaps and other defects caused by lattice mismatch are reduced, which improves electrical performance of the drain. Additionally, current leakage into the substrate is reduced, which further improves electrical performance of the drain. Additionally, or alternatively, implanting silicon in an aluminum nitride (AlN) liner for a gallium nitride drain reduces contact resistance at an interface between the gallium nitride and the silicon. As a result, electrical performance of the transistor is improved.

A light receiving device includes a substrate having a principal surface and a back surface, the substrate containing GaSb semiconductor co-doped with a p-type dopant and an n-type dopant; a stacked semiconductor layer disposed on the principal surface of the substrate, the stacked semiconductor layer including an optical absorption layer; and an incident surface provided on the back surface of the substrate that receives an incident light. The optical absorption layer includes a super-lattice structure including a first semiconductor layer and a second semiconductor layer that are alternately stacked. In addition, the first semiconductor layer contains gallium and antimony as constituent elements. The second semiconductor layer is composed of a material different from a material of the first semiconductor layer.

There is provided a photodiode array. The photodiode array includes a substrate that has an optical interface surface arranged for accepting external input radiation into the substrate. A plurality of photodiodes are disposed at a substrate surface opposite the optical interface surface of the substrate. Each photodiode in the plurality of photodiodes includes a photodiode material that generates light into the substrate as a result of external input radiation absorption by the photodiode. There is aperiodic photodiode placement along at least one direction of the array.

A substrate-removed, surface passivated, and anti-reflective (AR) coated detector assembly is provided. The assembly has an AR coating or passivation layer which includes a wide bandgap thin-film dielectric/passivation layer integrated therein. The wide bandgap thin-film dielectric/passivation layer is positioned proximal to a back interface of a substrate-removed detector assembly. A method of manufacturing the detector assembly includes etching a backside of a partially-removed-substrate detector assembly to obtain an etched detector assembly removed from a substrate. A wide bandgap layer is deposited, in a vacuum chamber, on the etched detector assembly without utilizing an adhesive layer. Additional anti-reflective coating layers are deposited, in the same vacuum chamber, on the wide bandgap layer to form an anti-reflective coating layer with the wide bandgap layer integrated therein. The wide bandgap layer is positioned proximal to an interface portion between the anti-reflective coating layer and the detector assembly.

A method for producing a semiconductor light receiving device includes the steps of growing a stacked semiconductor layer on a principal surface of a substrate, the stacked semiconductor layer including a light-receiving layer having a super-lattice structure, the super-lattice structure including a first semiconductor layer and a second semiconductor layer that are stacked alternately; forming a mask on the stacked semiconductor layer; forming a mesa structure on the substrate by etching the stacked semiconductor layer using the mask so as to form a substrate product, the mesa structure having a side surface exposed in an atmosphere; forming a fluorinated amorphous layer on the side surface of the mesa structure by exposing the substrate product in fluorine plasma; and after the step of forming the fluorinated amorphous layer, forming a passivation film containing an oxide on the side surface of the mesa structure.

The present application relates to a photodetector based on interband transition in quantum wells. The photodetector may include a first semiconductor layer having a first conduction type; a second semiconductor layer having a second conduction type different from the first conduction type; and a photon absorption layer arranged between the first semiconductor layer and the second semiconductor layer, the photon absorption layer including at least one quantum well layer and barrier layers arranged on both sides of each quantum well layer. The present application utilizes the modulating effect of a semiconductor PN junction on a photoelectric conversion process associated with quantum wells to significantly increase a current output of the photodetector based on the quantum well material.

An imaging device with excellent imaging performance is provided. An imaging device that easily performs imaging under a low illuminance condition is provided. A low power consumption imaging device is provided. An imaging device with small variations in characteristics between its pixels is provided. A highly integrated imaging device is provided. A photoelectric conversion element includes a first electrode, and a first layer, a second layer, and a third layer. The first layer is provided between the first electrode and the third layer. The second layer is provided between the first layer and the third layer. The first layer contains selenium. The second layer contains a metal oxide. The third layer contains a metal oxide and also contains at least one of a rare gas atom, phosphorus, and boron. The selenium may be crystalline selenium. The second layer may be a layer of an InGaZn oxide including c-axis-aligned crystals.

An optoelectronic device manufacturing method, including the following successive steps: transferring an active inorganic photosensitive diode stack on an integrated control circuit previously formed inside and on top of a semiconductor substrate; and forming a plurality of organic light-emitting diodes on the active photosensitive diode stack.

Techniques for realizing compound semiconductor (CS) optoelectronic devices on silicon (Si) substrates are disclosed. The integration platform is based on heteroepitaxy of CS materials and device structures on Si by direct heteroepitaxy on planar Si substrates or by selective area heteroepitaxy on dielectric patterned Si substrates. Following deposition of the CS device structures, device fabrication steps can be carried out using Si complimentary metal-oxide semiconductor (CMOS) fabrication techniques to enable large-volume manufacturing. The integration platform can enable manufacturing of optoelectronic module devices including photodetector arrays for image sensors and vertical cavity surface emitting laser arrays. Such module devices can be used in various applications including light detection and ranging (LIDAR) systems for automotive and robotic vehicles as well as mobile devices such as smart phones and tablets, and for other perception applications such as industrial vision, artificial intelligence (AI), augmented reality (AR) and virtual reality (VR).

Techniques for realizing compound semiconductor (CS) optoelectronic devices on silicon (Si) substrates for vehicle applications are disclosed. The integration platform is based on heteroepitaxy of CS materials and device structures on Si by direct heteroepitaxy on planar Si substrates or by selective area heteroepitaxy on dielectric patterned Si substrates. Following deposition of the CS device structures, device fabrication steps can be carried out using Si complimentary metal-oxide semiconductor (CMOS) fabrication techniques to enable large-volume manufacturing. The integration platform can enable manufacturing of optoelectronic devices including photodetector arrays for image sensors and vertical cavity surface emitting laser arrays. Such devices can be used in various applications including light detection and ranging (LIDAR) systems for vehicle apparatuses such as automobiles, boats, airplanes, and drones, and for other perception applications such as industrial vision, artificial intelligence (AI), augmented reality (AR) and virtual reality (VR).