Provided is an image sensor having a hybrid pixel structure in which pixels that sense visible light and pixels that sense ultraviolet light or infrared light are arranged together. For example, the image sensor includes a plurality of first pixels and a plurality of second pixels that are different in size. A width of each of the plurality of second pixels in a horizontal direction is a first integer multiple of a width of each of the plurality of first pixels in the horizontal direction, and a width of each of the plurality of second pixels in a vertical direction is a second integer multiple of a width of each of the plurality of first pixels in the vertical direction. The image sensor enables the pixels sensing ultraviolet light or infrared light, which have different sizes from the pixels sensing visible light, to be efficiently arranged together with the pixels sensing visible light, on the same substrate.

A sensor includes a plurality of image sensors, wherein each image sensor of the plurality of image sensors is configured to detect a first spectrum of light. The sensor further includes a depth sensing pixel bonded to each image sensor of the plurality of image sensors, wherein the depth sensing pixel is configured to detect a second spectrum of light different from the first spectrum.

Some embodiments of the present disclosure provide an image sensor. The image sensor includes a pixel sensor array including a plurality of photosensors arranged in a semiconductor substrate. Peripheral circuitry is arranged in or on the semiconductor substrate and is spaced apart from the pixel sensor array. A protection ring circumscribes an outer perimeter of the pixel sensor array and separates the pixel sensor array from the peripheral circuitry. The protection ring has an annular width of greater than 20 microns. The protection ring includes a first ring in the substrate neighboring the pixel sensor array, a second ring circumscribing the first ring and meeting the first ring at a first p-n junction, and a third ring circumscribing the second ring and meeting the second ring at a second p-n junction.

An imaging device includes a first pixel electrode, a second pixel electrode adjacent to the first pixel electrode, and a photoelectric conversion film continuously covering the first pixel electrode and the second pixel electrode, in which an insulating film is provided between the first pixel electrode and the photoelectric conversion film, and between the second pixel electrode and the photoelectric conversion film, and an intermediate electrode is provided in a position between the first pixel electrode and the second pixel electrode, the intermediate electrode being in contact with a surface of the photoelectric conversion film, the surface being on a side where the first and second pixel electrodes are arranged.

An image sensor including a control circuit and a plurality of pixels, each pixel including: a photosensitive area, a substantially rectangular storage area adjacent to the photosensitive area, and a read area; first and second insulated vertical electrodes electrically connected to each other, opposite each other, and delimiting the storage area, the first electrode extending between the storage area and the photosensitive area, the second electrode including a bent extension opposite a first end of the first electrode, the storage area emerging onto the photosensitive area on the side of the first end, the control circuit being capable of applying a first voltage to the first and second electrodes to perform a charge transfer, and a second voltage to block said transfer.

An imaging device that includes a substrate, a photoelectric conversion section disposed in the substrate, an element isolation region disposed adjacent to the photoelectric conversion section, a floating diffusion electrically connected to the photoelectric conversion section, an amplification transistor having a gate electrode and an active region, and a contact section disposed on the gate electrode of the amplification transistor. The contact section overlaps the active region of the amplification transistor. The floating diffusion is electrically connected to the gate electrode of the amplification transistor via the contact section. The width of the gate electrode of the amplification transistor is larger than a width of the active region of the amplification transistor. The photoelectric conversion section includes a first type impurity, and the element isolation region includes a second type impurity having a conductivity opposite to the first type impurity.

A solid-state image pickup device includes an optoelectronic conversion unit, a first optical signal accumulation unit, a second optical signal accumulation unit, and a combining unit, in which the first optical signal accumulation unit accumulates a first optical signal obtained by the optoelectronic conversion by the optoelectronic conversion unit in a first period, the second optical signal accumulation unit accumulates a second optical signal obtained by the optoelectronic conversion by the optoelectronic conversion unit in a second period, the second period being shorter than the first period, and the combining unit combines the second optical signal with the first optical signal when a noise in the first optical signal is equal to or larger than a noise in the second optical signal.

The present disclosure relates to an image sensor including: a plurality of pixels, each including a first photodiode coupled to a first capacitive charge storage node by a first transistor, and a second photodiode coupled to a second capacitive charge storage node by a second transistor; and a control circuit configured so as to, during a phase of acquisition of a value representative of the illumination level of a pixel: acquire a first output value representative of the illumination level received by the first photodiode during a first uninterrupted integration period; and acquire a second output value representative of the illumination level received by the second photodiode during a second integration period divided into a plurality of separate sub-periods.

A curved image sensor chip has a first side and a second side opposite the first side. The second side includes light sensors configured to generate electrical signals in response to receiving light. A substrate is in contact with the first side of the curved image sensor chip and is configured to increase in volume so as to apply a bending force to form the curved image sensor chip.

According to embodiments of the present invention, a pixel arrangement is provided. The pixel arrangement includes a plurality of pixels arranged adjacent to each other; and a substrate configured to receive the plurality of pixels, wherein each pixel of the plurality of pixels comprises a plurality of optical cells electrically coupled to each other; and an electrical interconnection electrically isolated from the plurality of optical cells, the electrical interconnection arranged to provide electrical communication between two separate conducting terminals external to the pixel.