An image sensor includes first and second pluralities of photodiodes interspersed among each other in a semiconductor substrate. Incident light is to be directed through a surface of the semiconductor substrate into the first and second pluralities of photodiodes. The first plurality of photodiodes has greater sensitivity to the incident light than the second plurality of photodiodes. A metal film layer is disposed over the surface of the semiconductor substrate over the second plurality of photodiodes and not over the first plurality of photodiodes. A metal grid is disposed over the surface of the semiconductor substrate, and includes a first plurality of openings through which the incident light is directed into the first plurality of photodiodes. The metal grid further includes a second plurality of openings through which the incident light is directed through the metal film layer into the second plurality of photodiodes.

A pixel array may include a metal shielding structure on a grid structure between pixel sensors in the pixel array. The metal shielding structure laterally extends outward from the grid structure to reflect photons of incident light that might otherwise travel between the grid structure and the isolation structure of the pixel sensors in the pixel array. The lateral extensions of the metal shielding reflect these photons to reduce crosstalk between adjacent pixel sensors, thereby increasing the performance of the pixel array.

An image sensing device includes a pixel array including a plurality of unit pixels consecutively arranged and structured to generate an electrical signal in response to incident light by performing photoelectric conversion of the incident light. The unit pixels are isolated from each other by first device isolation structures. Each of the unit pixels includes a photoelectric conversion element structured to generate photocharges by performing photoelectric conversion of the incident light, a floating diffusion region structured to receive the photocharges, a transfer transistor structured to transfer the photocharges generated by the photoelectric conversion element to the floating diffusion region, and a well tap region structured to apply a bias voltage to a well region. The well tap region is disposed at a center portion of a corresponding unit pixel.

A pixel including: a first sub-pixel including a plurality of first photodiodes and a first reset transistor; and a second sub-pixel including a plurality of second photodiodes and a second reset transistor, wherein the first sub-pixel shares a floating diffusion node with the second sub-pixel, and wherein a length in a first direction of a metal line for sharing the floating diffusion node is shorter than a length in the first direction of a line connecting a center point of the first sub-pixel to a center point of the second sub-pixel.

An image sensing device is provided to include: a substrate including photoelectric conversion elements, each configured to generate photocharge corresponding to the intensity of incident light; a plurality of optical filters disposed over the substrate and configured to selectively transmit the incident light to the plurality of photoelectric conversion elements; and an optical grid structure disposed between the optical filters adjacent to each other. The optical grid structure comprises a capping layer disposed along a boundary of the optical grid structure and structured to define a space with an open area to expose the space to an outside of the optical grid structure so that the space is filled with air as an air layer, wherein a first width of a top side of the air layer is smaller than a second width of a bottom side thereof.

The present disclosure, in some embodiments, relates to an integrated chip. The integrated chip includes a substrate having an image sensor region arranged between sidewalls of the substrate that form one or more trenches. One or more dielectric materials are arranged along the sidewalls of the substrate that form the one or more trenches. A reflective region is disposed within the one or more trenches and laterally surrounded by the one or more dielectric materials. The reflective region includes a plurality of reflective portions that are arranged at different vertical positions within the reflective region and that have different reflective properties.

An array of at least two photodiodes, wherein each photodiode includes an absorption region and a capture region, the capture region including an electrically conductive pad, the absorption region being in contact with the capture region, the absorption region being configured to absorb an incident radiation on the photodiode and to enable a diffusion of charge carriers, in which each absorption region is separated from the other absorption regions, and wherein the absorption region of each photodiode has a convex shape towards the incident radiation.

Provided is an imaging apparatus that includes a photoelectric converter that generates a charge according to a received light amount, and a charge transfer region that is disposed at a place inside a substrate not exposed to a substrate surface and in contact with the photoelectric converter, and to which the charge generated by the photoelectric converter is transferred. The imaging apparatus further includes a charge accumulation region that is disposed apart from the charge transfer region in a substrate surface direction and accumulates the charge transferred from the charge transfer region, a transistor that performs control to transfer the charge from the charge transfer region to the charge accumulation region, and a detector that outputs a detection signal indicating whether or not an absolute value of a change amount of an electrical signal according to an amount of the charge transferred by the transistor exceeds a predetermined threshold value.

An image sensor includes a first pixel array. The first pixel array includes multiple photo diodes and a polyhedron structure. The polyhedron structure is located above the photo diodes, and the polyhedron structure includes a bottom facet, a top facet, and at least one side facet. The bottom facet is located between the side facet and the photo diodes, and an orthogonal projection of the polyhedron structure overlaps with photo diodes. The polyhedron structure is configured to divide an incident light into a plurality of light beams focused in the photo diodes.

A fingerprint recognition module is disclosed, and including: a base substrate; a driving circuit layer disposed on a side of the base substrate, and including a plurality of driving transistors arranged in an array; a first insulating layer disposed on a side of the driving circuit layer facing away from the base substrate, and including a plurality of first via holes running through the first insulating layer in a thickness direction of the first insulating layer; a plurality of photoelectric converters disposed on a side of the first insulating layer facing away from the driving circuit layer, and in contact with first electrodes of the plurality of driving transistors through the plurality of first via holes in one-to-one correspondence; a second insulating layer disposed on a side of the first insulating layer facing away from the base substrate.