A merged frame-based and event-based image sensor pixel is provided, comprising a reverse-biased photodiode; a frame-based signal readout circuit connected to a cathode of the photodiode; and an event-based signal readout circuit connected to an anode of the photodiode. Light received in the photodiode causes the production of electrons and holes. The recombination current of the holes is continuously measured for producing the event-based signal.

An image sensing device includes a semiconductor substrate; unit pixels supported by the semiconductor substrate to detect light incident to the unit pixels and to convert detected light into pixel signal, and an inter-pixel isolation structure disposed between adjacent unit pixels to physically isolate the adjacent unit pixel from each other. Each unit pixel includes photoelectric conversion elements, an inner-pixel isolation structure disposed between adjacent photoelectric conversion elements within the unit pixel and at least one overflow path configured to interconnect the photoelectric conversion elements within the unit pixel, and wherein each unit pixel is shaped in a triangular shape when viewed in a plane.

An image sensing device includes a substrate extending in a first direction and a second direction and including a first surface and a second surface; a plurality of unit pixel regions supported by the substrate to generate signal carriers through conversion of incident light; a plurality of circuit structures arranged to be spaced apart from each other in the first direction to generate a current in the substrate and capture the signal carriers carried by the current; a first isolation structure disposed between adjacent unit pixel regions in the substrate and extending vertically in a depth direction of the substrate while extending in the second direction; and a plurality of second isolation structures located on two opposite sides of the plurality of circuit structures in the second direction within the substrate, and arranged to extend obliquely in a depth direction in the substrate while extending in the first direction.

There are provided an image processing apparatus and a control method thereof. An image processing apparatus includes an image sensor for acquiring a target image, an image processing module for performing focusing on a specific area of the acquired target image and determining a focal surface of the target image on the basis of the performed focusing, and a drive control module for controlling the curvature of the image sensor, based on the determined focal surface.

The present disclosure relates to a solid state imaging device and an electronic apparatus in which, in phase difference pixels that do not include a light blocking layer for forming a phase difference, the phase difference detection characteristics can be made uniform regardless of the image height. Provided is a solid state imaging device including a pixel array unit in which a plurality of pixels are two-dimensionally arranged in a matrix configuration. Part of the pixels in the pixel array unit include a first photoelectric conversion element and a second photoelectric conversion element configured to receive and photoelectrically convert incident light. A center position of a light receiving characteristic distribution of the first photoelectric conversion element and a center position of a light receiving characteristic distribution of the second photoelectric conversion element are configured so as to be the same between a central portion and a peripheral portion of the pixel array unit. The technology of the present disclosure can be applied to, for example, a solid state imaging device.

There is provided in a first form, an apparatus. The apparatus includes a detector array having a plurality of elements, the detector array comprising a photosensitive material and a photosensitive region disposed about and distinct from the plurality of elements. Electrical circuitry is coupled to each of the elements of the detector array. The electrical circuitry is configured to generate a set of first signals, each first signal of the set of first signals is based on optical energy impinging on a respective one of the plurality of elements of the detector array. The photosensitive region is coupled to the electrical circuitry and the electrical circuitry is configured to generate a second signal having a first value if no portion of optical energy impinging on the plurality of elements of the detector array impinges on the region disposed about the plurality of elements of the detector array. The second signal has a second value, distinct from the first value, if a portion of an optical energy impinging on the plurality of elements of the detector array impinges on the photosensitive region disposed about the plurality of elements of the detector array, the portion of the optical energy impinging on the photosensitive region disposed about the plurality of elements exceeds a threshold energy.

A solid-state imaging device includes a layout in which one sharing unit includes an array of photodiodes of 2 pixels by 4n pixels (where, n is a positive integer), respectively, in horizontal and vertical directions.

Provided are a semiconductor device capable of detecting a light of each color with high accuracy without using a color filter, particularly enhancing detection accuracy of charges obtained by photoelectric conversion of a long-wavelength light, and manufacturing and control methods thereof. The semiconductor device has a p type semiconductor substrate, and first, second and third pixel regions. These regions each include a p type well region in the p type semiconductor substrate and an n type region configuring a pn junction therewith. The p type well region of the first pixel region is thinner, from the main surface to the lowermost portion, than that of the second and third pixel regions. On the side opposite to the main surface of the p type well region of the first and second pixel regions, a buried p type well region contiguous to the p type well region is further placed.

An image sensor can include a photoelectric conversion part of an active region of a substrate and a trench in the substrate. A transfer transistor gate electrode can extend from outside the trench into the trench and terminate in the trench to provide an exposed portion of the trench in the photoelectric conversion part.

A solid-state imaging device includes a first-conductivity-type semiconductor well region, a plurality of pixels each of which is formed on the semiconductor well region and is composed of a photoelectric conversion portion and a pixel transistor, an element isolation region provided between the pixels and in the pixels, and an element isolation region being free from an insulation film and being provided between desired pixel transistors.