A radiation image-pickup device includes: a plurality of pixels each configured to generate signal charge based on radiation; and a field effect transistor used to read the signal charge from each of the plurality of pixels, wherein the field effect transistor includes a semiconductor layer including an active layer and a low concentration impurity layer formed to be adjacent to the active layer, and a first and a second gate electrode disposed to face each other with the active layer interposed therebetween, and one or both of the first and the second gate electrodes are provided in a region not facing the low concentration impurity layer.

A High Voltage Complementary Metal-Oxide-Semiconductor, HV-CMOS, sensor comprising a p-substrate having a topside and a backside; wherein the topside comprises: an array of mutually spaced apart pixel structures, including a first pixel structure, therein and/or thereon, wherein the first pixel structure comprises: a set of PMOS and NMOS transistors, including a first PMOS transistor having an n-well, SN, layer, and a first NMOS transistor having a p-well, SP, layer; a deep n-well, DN, structure having a DN layer; a p-type buried, BP, layer disposed to mutually isolate the SN layer and the DN layer; an n-type buried, BN, layer providing a SN/BN/DN stack; and a set of contacts, including a first contact, electrically coupled to the DN layer via the SN/BN/DN stack; wherein the backside comprises: a doped p+ layer therein and/or thereon; and wherein the sensor comprises an HV bias contact electrically coupled only to the p+ layer, for backside biasing thereof.

The present disclosure relates to a semiconductor image sensor with improved quantum efficiency. The semiconductor image sensor can include a semiconductor layer having a first surface and a second surface opposite of the first surface. An interconnect structure is disposed on the first surface of the semiconductor layer, and radiation-sensing regions are formed in the semiconductor layer. The radiation-sensing regions are configured to sense radiation that enters the semiconductor layer from the second surface and groove structures are formed on the second surface of the semiconductor layer.

Provided are a sensing device and a manufacturing method thereof. The sensing device includes a substrate, a first electrode and a sensing layer. The first electrode is disposed on the substrate. The sensing layer is disposed on the first electrode and has a first surface adjacent to the first electrode. The first electrode has a length smaller than that of the first surface. The manufacturing method of the sensing device includes the following. A substrate is provided. A sensing layer is formed on the substrate. A first electrode is formed on the substrate so that the first electrode is disposed between the sensing layer and the substrate. The sensing layer has a first surface adjacent to the first electrode. The first electrode has a length smaller than that of the first surface of the sensing layer.

A radiation detection device includes a pixel array, a control unit configured to control an operation of the pixel array, a reading unit configured to read a pixel signal corresponding to the charges existing in the floating diffusion unit from each of the pixels, and a signal processing unit configured to process the read pixel signal. The control unit simultaneously transfers the charges from photoelectric conversion unit to charge holding unit in a plurality of pixels arranged in the pixel array for each frame. In a case where the pixel signals read from a certain pixel of the pixel array in two consecutive frames exceed a predetermined value, the signal processing unit corrects the pixel signal read from the certain pixel for temporally earlier one of the two consecutive frames to a smaller correction value.

A photoelectric detection circuit and a driving method therefor, and a detection substrate and a ray detector. The photoelectric detection circuit includes a storage circuit (101), an amplification circuit (102), a first reading circuit (103) and a second reading circuit (104), where the storage circuit (101), the amplification circuit (102) and the first reading circuit (103) cooperate with one another to realize a photoelectric detection function in an active mode; and the storage circuit (101) and the second reading circuit (104) cooperate with each other to realize a photoelectric detection function in a passive mode.

A radiation detection element includes: a semiconductor part including an incidence surface to which radiations to be detected are incident; a first electrode provided on the incidence surface; and a second electrode that is provided on the incidence surface and is disposed at a position surrounding the periphery of the first electrode. The radiation detection element is a silicon drift-type radiation detection element, and is provided with an insulating protective film that covers the second electrode.

The present disclosure relates to a semiconductor image sensor with improved quantum efficiency. The semiconductor image sensor can include a semiconductor layer having a first surface and a second surface opposite of the first surface. An interconnect structure is disposed on the first surface of the semiconductor layer, and radiation-sensing regions are formed in the semiconductor layer. The radiation-sensing regions are configured to sense radiation that enters the semiconductor layer from the second surface and groove structures are formed on the second surface of the semiconductor layer.

Provided are a sensing device and a manufacturing method thereof. The sensing device includes a substrate, a first electrode, a sensing layer and a second electrode. The first electrode is disposed on the substrate. The sensing layer is disposed on the first electrode. The second electrode is disposed on the sensing layer. The sensing layer has a surface adjacent to the second electrode. In a cross-sectional view, the second electrode has a length smaller than a length of the surface. The manufacturing method of the sensing device includes the following. A substrate is provided. A sensing layer is formed on the substrate. A first electrode is formed on the substrate so that the first electrode is disposed between the sensing layer and the substrate. The second electrode is formed on the sensing layer.

The present disclosure provides an X-ray sensing device. The X-ray sensing device includes a substrate, a first metal electrode, a second metal electrode, an X-ray photoelectric conversion layer, a third metal electrode, and an insulating layer. The first metal electrode and the second metal electrode are on the substrate and separated from each other. The X-ray photoelectric conversion layer extends continuously on the substrate and directly contacts the first metal electrode and the second metal electrode. The X-ray photoelectric conversion layer includes silicon, amorphous selenium, germanium, cadmium zinc telluride, bismuth iodide, lead oxide, Cs.sub.2TeI.sub.6 perovskite, CsPbBr.sub.3 perovskite, bismuth-based halide perovskite, 6,13-bis(triisopropylsilylethynyl)pentacene, poly(9,9-dioctylfluorene), polydimethylsilane, or combinations thereof. The third metal electrode and the insulating layer are on the substrate, and the third metal electrode is separated from the first metal electrode, the second metal electrode, and the X-ray photoelectric conversion layer by the insulating layer.